Simulation of 1.3-μm AlGaInAs/InP strained MQW lasers

Shang Wei Hsieh; Hsiu Fen Chen; Ming Wei Yao; Yen Kuang Kuo

doi:10.1117/12.575434

Simulation of 1.3-μm AlGaInAs/InP strained MQW lasers

Shang Wei Hsieh, Hsiu Fen Chen, Ming Wei Yao, Yen Kuang Kuo

Department of Physics

Research output: Contribution to journal › Conference article › peer-review

Abstract

Optimization of a 1300-nm AlGaInAs/InP strained multiple quantum-well structure with an electron stop layer, which is located between the active region and the p-type GRIN-SCH layer, is studied numerically with a LASTIP simulation program. Specifically, the effect of the electron stop layer on the characteristic temperature and the temperature dependence of the slope efficiency are investigated. Various physical parameters at different operating temperatures are adjusted so that the threshold currents of the simulated laser structure can be matched to the results measured experimentally by Selmic et al. Our simulated results suggest that the AlInAs is a better material for the electron stop layer than the GaAsP. With the use of a p-type Al _0.5In_0.5As electron stop layer and an active region consisting of Al_0.175Ga_0.095In_0.73As(6 nm)/Al_0.27Ga_0.21In_0.52As(10 nm), a characteristic temperature of as high as 94.7 K is achieved for the 250-μm-long AlGaInAs/InP strained quantum-well laser under study.

Original language	English
Article number	59
Pages (from-to)	318-326
Number of pages	9
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5628
DOIs	https://doi.org/10.1117/12.575434
Publication status	Published - 2005 Jun 1
Event	Semiconductor Lasers and Applications II - Beijing, China Duration: 2004 Nov 8 → 2004 Nov 9

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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@article{8a2b8071da6e4f8db36e802054ea6224,

title = "Simulation of 1.3-μm AlGaInAs/InP strained MQW lasers",

abstract = "Optimization of a 1300-nm AlGaInAs/InP strained multiple quantum-well structure with an electron stop layer, which is located between the active region and the p-type GRIN-SCH layer, is studied numerically with a LASTIP simulation program. Specifically, the effect of the electron stop layer on the characteristic temperature and the temperature dependence of the slope efficiency are investigated. Various physical parameters at different operating temperatures are adjusted so that the threshold currents of the simulated laser structure can be matched to the results measured experimentally by Selmic et al. Our simulated results suggest that the AlInAs is a better material for the electron stop layer than the GaAsP. With the use of a p-type Al 0.5In0.5As electron stop layer and an active region consisting of Al0.175Ga0.095In0.73As(6 nm)/Al0.27Ga0.21In0.52As(10 nm), a characteristic temperature of as high as 94.7 K is achieved for the 250-μm-long AlGaInAs/InP strained quantum-well laser under study.",

author = "Hsieh, {Shang Wei} and Chen, {Hsiu Fen} and Yao, {Ming Wei} and Kuo, {Yen Kuang}",

year = "2005",

month = jun,

day = "1",

doi = "10.1117/12.575434",

language = "English",

volume = "5628",

pages = "318--326",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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note = "Semiconductor Lasers and Applications II ; Conference date: 08-11-2004 Through 09-11-2004",

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TY - JOUR

T1 - Simulation of 1.3-μm AlGaInAs/InP strained MQW lasers

AU - Hsieh, Shang Wei

AU - Chen, Hsiu Fen

AU - Yao, Ming Wei

AU - Kuo, Yen Kuang

PY - 2005/6/1

Y1 - 2005/6/1

N2 - Optimization of a 1300-nm AlGaInAs/InP strained multiple quantum-well structure with an electron stop layer, which is located between the active region and the p-type GRIN-SCH layer, is studied numerically with a LASTIP simulation program. Specifically, the effect of the electron stop layer on the characteristic temperature and the temperature dependence of the slope efficiency are investigated. Various physical parameters at different operating temperatures are adjusted so that the threshold currents of the simulated laser structure can be matched to the results measured experimentally by Selmic et al. Our simulated results suggest that the AlInAs is a better material for the electron stop layer than the GaAsP. With the use of a p-type Al 0.5In0.5As electron stop layer and an active region consisting of Al0.175Ga0.095In0.73As(6 nm)/Al0.27Ga0.21In0.52As(10 nm), a characteristic temperature of as high as 94.7 K is achieved for the 250-μm-long AlGaInAs/InP strained quantum-well laser under study.

AB - Optimization of a 1300-nm AlGaInAs/InP strained multiple quantum-well structure with an electron stop layer, which is located between the active region and the p-type GRIN-SCH layer, is studied numerically with a LASTIP simulation program. Specifically, the effect of the electron stop layer on the characteristic temperature and the temperature dependence of the slope efficiency are investigated. Various physical parameters at different operating temperatures are adjusted so that the threshold currents of the simulated laser structure can be matched to the results measured experimentally by Selmic et al. Our simulated results suggest that the AlInAs is a better material for the electron stop layer than the GaAsP. With the use of a p-type Al 0.5In0.5As electron stop layer and an active region consisting of Al0.175Ga0.095In0.73As(6 nm)/Al0.27Ga0.21In0.52As(10 nm), a characteristic temperature of as high as 94.7 K is achieved for the 250-μm-long AlGaInAs/InP strained quantum-well laser under study.

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