Abstract
Optimization of a 1300-nm AlGaInAs/InP strained multiple quantum-well structure with an electron stop layer, which is located between the active region and the p-type GRIN-SCH layer, is studied numerically with a LASTIP simulation program. Specifically, the effect of the electron stop layer on the characteristic temperature and the temperature dependence of the slope efficiency are investigated. Various physical parameters at different operating temperatures are adjusted so that the threshold currents of the simulated laser structure can be matched to the results measured experimentally by Selmic et al. Our simulated results suggest that the AlInAs is a better material for the electron stop layer than the GaAsP. With the use of a p-type Al 0.5In0.5As electron stop layer and an active region consisting of Al0.175Ga0.095In0.73As(6 nm)/Al0.27Ga0.21In0.52As(10 nm), a characteristic temperature of as high as 94.7 K is achieved for the 250-μm-long AlGaInAs/InP strained quantum-well laser under study.
| Original language | English |
|---|---|
| Article number | 59 |
| Pages (from-to) | 318-326 |
| Number of pages | 9 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 5628 |
| DOIs | |
| Publication status | Published - 2005 Jun 1 |
| Event | Semiconductor Lasers and Applications II - Beijing, China Duration: 2004 Nov 8 → 2004 Nov 9 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering
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Simulation of 1.3-μm AlGaInAs/InP strained MQW lasers. / Hsieh, Shang Wei; Chen, Hsiu Fen; Yao, Ming Wei; Kuo, Yen Kuang.
In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 5628, 59, 01.06.2005, p. 318-326.Research output: Contribution to journal › Conference article
TY - JOUR
T1 - Simulation of 1.3-μm AlGaInAs/InP strained MQW lasers
AU - Hsieh, Shang Wei
AU - Chen, Hsiu Fen
AU - Yao, Ming Wei
AU - Kuo, Yen Kuang
PY - 2005/6/1
Y1 - 2005/6/1
N2 - Optimization of a 1300-nm AlGaInAs/InP strained multiple quantum-well structure with an electron stop layer, which is located between the active region and the p-type GRIN-SCH layer, is studied numerically with a LASTIP simulation program. Specifically, the effect of the electron stop layer on the characteristic temperature and the temperature dependence of the slope efficiency are investigated. Various physical parameters at different operating temperatures are adjusted so that the threshold currents of the simulated laser structure can be matched to the results measured experimentally by Selmic et al. Our simulated results suggest that the AlInAs is a better material for the electron stop layer than the GaAsP. With the use of a p-type Al 0.5In0.5As electron stop layer and an active region consisting of Al0.175Ga0.095In0.73As(6 nm)/Al0.27Ga0.21In0.52As(10 nm), a characteristic temperature of as high as 94.7 K is achieved for the 250-μm-long AlGaInAs/InP strained quantum-well laser under study.
AB - Optimization of a 1300-nm AlGaInAs/InP strained multiple quantum-well structure with an electron stop layer, which is located between the active region and the p-type GRIN-SCH layer, is studied numerically with a LASTIP simulation program. Specifically, the effect of the electron stop layer on the characteristic temperature and the temperature dependence of the slope efficiency are investigated. Various physical parameters at different operating temperatures are adjusted so that the threshold currents of the simulated laser structure can be matched to the results measured experimentally by Selmic et al. Our simulated results suggest that the AlInAs is a better material for the electron stop layer than the GaAsP. With the use of a p-type Al 0.5In0.5As electron stop layer and an active region consisting of Al0.175Ga0.095In0.73As(6 nm)/Al0.27Ga0.21In0.52As(10 nm), a characteristic temperature of as high as 94.7 K is achieved for the 250-μm-long AlGaInAs/InP strained quantum-well laser under study.
UR - http://www.scopus.com/inward/record.url?scp=18944402393&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=18944402393&partnerID=8YFLogxK
U2 - 10.1117/12.575434
DO - 10.1117/12.575434
M3 - Conference article
AN - SCOPUS:18944402393
VL - 5628
SP - 318
EP - 326
JO - Proceedings of SPIE - The International Society for Optical Engineering
JF - Proceedings of SPIE - The International Society for Optical Engineering
SN - 0277-786X
M1 - 59
ER -