Simulation of 1.3-μm AlGaInAs/InP strained MQW lasers

Shang Wei Hsieh, Hsiu Fen Chen, Ming Wei Yao, Yen Kuang Kuo

Research output: Contribution to journalConference article

Abstract

Optimization of a 1300-nm AlGaInAs/InP strained multiple quantum-well structure with an electron stop layer, which is located between the active region and the p-type GRIN-SCH layer, is studied numerically with a LASTIP simulation program. Specifically, the effect of the electron stop layer on the characteristic temperature and the temperature dependence of the slope efficiency are investigated. Various physical parameters at different operating temperatures are adjusted so that the threshold currents of the simulated laser structure can be matched to the results measured experimentally by Selmic et al. Our simulated results suggest that the AlInAs is a better material for the electron stop layer than the GaAsP. With the use of a p-type Al 0.5In0.5As electron stop layer and an active region consisting of Al0.175Ga0.095In0.73As(6 nm)/Al0.27Ga0.21In0.52As(10 nm), a characteristic temperature of as high as 94.7 K is achieved for the 250-μm-long AlGaInAs/InP strained quantum-well laser under study.

Original languageEnglish
Article number59
Pages (from-to)318-326
Number of pages9
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume5628
DOIs
Publication statusPublished - 2005 Jun 1
EventSemiconductor Lasers and Applications II - Beijing, China
Duration: 2004 Nov 82004 Nov 9

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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