Simulation and design of InGaAsN metal-semiconductor-metal photodetectors for long wavelength optical communications

Shin Li Tsai; Jenq Shinn Wu; Hung Ji Lin; Der Yuh Lin; Jin Yao Zheng

doi:10.1002/pssc.200778510

Simulation and design of InGaAsN metal-semiconductor-metal photodetectors for long wavelength optical communications

Shin Li Tsai, Jenq Shinn Wu, Hung Ji Lin, Der Yuh Lin, Jin Yao Zheng

Department of Electronic Engineering

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

Optical properties of InGaAsN/AlGaAs metal-semi-conductor-metal photodetectors (MSM-PDs) with a modulation-doped heterostructure operating at the wavelength of 1.3 μm have been simulated by a two-dimensional device simulator. Simulation results show that the optimized device structure has a 30-nm-thick cap layer with N_d = 2×10¹⁷ cm ^-3, a 10-nm-thick spacer layer, and 7-μm-wide finger spacing to exhibit the largest photocurrent response and shortest decay response time.

Original language	English
Pages (from-to)	2167-2169
Number of pages	3
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	5
Issue number	6
DOIs	https://doi.org/10.1002/pssc.200778510
Publication status	Published - 2008 Dec 1
Event	7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, United States Duration: 2007 Sep 16 → 2007 Sep 21

All Science Journal Classification (ASJC) codes

Condensed Matter Physics

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@article{3a816f5a181f4c82821b1374a7a498e2,

title = "Simulation and design of InGaAsN metal-semiconductor-metal photodetectors for long wavelength optical communications",

abstract = "Optical properties of InGaAsN/AlGaAs metal-semi-conductor-metal photodetectors (MSM-PDs) with a modulation-doped heterostructure operating at the wavelength of 1.3 μm have been simulated by a two-dimensional device simulator. Simulation results show that the optimized device structure has a 30-nm-thick cap layer with Nd = 2×1017 cm -3, a 10-nm-thick spacer layer, and 7-μm-wide finger spacing to exhibit the largest photocurrent response and shortest decay response time.",

author = "Tsai, {Shin Li} and Wu, {Jenq Shinn} and Lin, {Hung Ji} and Lin, {Der Yuh} and Zheng, {Jin Yao}",

year = "2008",

month = dec,

day = "1",

doi = "10.1002/pssc.200778510",

language = "English",

volume = "5",

pages = "2167--2169",

journal = "Physica Status Solidi C: Conferences",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

number = "6",

note = "7th International Conference of Nitride Semiconductors, ICNS-7 ; Conference date: 16-09-2007 Through 21-09-2007",

}

Simulation and design of InGaAsN metal-semiconductor-metal photodetectors for long wavelength optical communications. / Tsai, Shin Li; Wu, Jenq Shinn; Lin, Hung Ji; Lin, Der Yuh; Zheng, Jin Yao.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 5, No. 6, 01.12.2008, p. 2167-2169.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Simulation and design of InGaAsN metal-semiconductor-metal photodetectors for long wavelength optical communications

AU - Tsai, Shin Li

AU - Wu, Jenq Shinn

AU - Lin, Hung Ji

AU - Lin, Der Yuh

AU - Zheng, Jin Yao

PY - 2008/12/1

Y1 - 2008/12/1

N2 - Optical properties of InGaAsN/AlGaAs metal-semi-conductor-metal photodetectors (MSM-PDs) with a modulation-doped heterostructure operating at the wavelength of 1.3 μm have been simulated by a two-dimensional device simulator. Simulation results show that the optimized device structure has a 30-nm-thick cap layer with Nd = 2×1017 cm -3, a 10-nm-thick spacer layer, and 7-μm-wide finger spacing to exhibit the largest photocurrent response and shortest decay response time.

AB - Optical properties of InGaAsN/AlGaAs metal-semi-conductor-metal photodetectors (MSM-PDs) with a modulation-doped heterostructure operating at the wavelength of 1.3 μm have been simulated by a two-dimensional device simulator. Simulation results show that the optimized device structure has a 30-nm-thick cap layer with Nd = 2×1017 cm -3, a 10-nm-thick spacer layer, and 7-μm-wide finger spacing to exhibit the largest photocurrent response and shortest decay response time.

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JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

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T2 - 7th International Conference of Nitride Semiconductors, ICNS-7

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