Simulation and design of InGaAsN metal-semiconductor-metal photodetectors for long wavelength optical communications

Shin Li Tsai, Jenq Shinn Wu, Hung Ji Lin, Der Yuh Lin, Jin Yao Zheng

Research output: Contribution to journalConference article

Abstract

Optical properties of InGaAsN/AlGaAs metal-semi-conductor-metal photodetectors (MSM-PDs) with a modulation-doped heterostructure operating at the wavelength of 1.3 μm have been simulated by a two-dimensional device simulator. Simulation results show that the optimized device structure has a 30-nm-thick cap layer with Nd = 2×1017 cm -3, a 10-nm-thick spacer layer, and 7-μm-wide finger spacing to exhibit the largest photocurrent response and shortest decay response time.

Original languageEnglish
Pages (from-to)2167-2169
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume5
Issue number6
DOIs
Publication statusPublished - 2008 Dec 1
Event7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, United States
Duration: 2007 Sep 162007 Sep 21

Fingerprint

photometers
optical communication
caps
wavelengths
metals
spacers
simulators
photocurrents
aluminum gallium arsenides
conductors
simulation
spacing
modulation
optical properties
decay

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

Cite this

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title = "Simulation and design of InGaAsN metal-semiconductor-metal photodetectors for long wavelength optical communications",
abstract = "Optical properties of InGaAsN/AlGaAs metal-semi-conductor-metal photodetectors (MSM-PDs) with a modulation-doped heterostructure operating at the wavelength of 1.3 μm have been simulated by a two-dimensional device simulator. Simulation results show that the optimized device structure has a 30-nm-thick cap layer with Nd = 2×1017 cm -3, a 10-nm-thick spacer layer, and 7-μm-wide finger spacing to exhibit the largest photocurrent response and shortest decay response time.",
author = "Tsai, {Shin Li} and Wu, {Jenq Shinn} and Lin, {Hung Ji} and Lin, {Der Yuh} and Zheng, {Jin Yao}",
year = "2008",
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language = "English",
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journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",
issn = "1862-6351",
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number = "6",

}

Simulation and design of InGaAsN metal-semiconductor-metal photodetectors for long wavelength optical communications. / Tsai, Shin Li; Wu, Jenq Shinn; Lin, Hung Ji; Lin, Der Yuh; Zheng, Jin Yao.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 5, No. 6, 01.12.2008, p. 2167-2169.

Research output: Contribution to journalConference article

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T1 - Simulation and design of InGaAsN metal-semiconductor-metal photodetectors for long wavelength optical communications

AU - Tsai, Shin Li

AU - Wu, Jenq Shinn

AU - Lin, Hung Ji

AU - Lin, Der Yuh

AU - Zheng, Jin Yao

PY - 2008/12/1

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N2 - Optical properties of InGaAsN/AlGaAs metal-semi-conductor-metal photodetectors (MSM-PDs) with a modulation-doped heterostructure operating at the wavelength of 1.3 μm have been simulated by a two-dimensional device simulator. Simulation results show that the optimized device structure has a 30-nm-thick cap layer with Nd = 2×1017 cm -3, a 10-nm-thick spacer layer, and 7-μm-wide finger spacing to exhibit the largest photocurrent response and shortest decay response time.

AB - Optical properties of InGaAsN/AlGaAs metal-semi-conductor-metal photodetectors (MSM-PDs) with a modulation-doped heterostructure operating at the wavelength of 1.3 μm have been simulated by a two-dimensional device simulator. Simulation results show that the optimized device structure has a 30-nm-thick cap layer with Nd = 2×1017 cm -3, a 10-nm-thick spacer layer, and 7-μm-wide finger spacing to exhibit the largest photocurrent response and shortest decay response time.

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