Abstract
Optical properties of InGaAsN/AlGaAs metal-semi-conductor-metal photodetectors (MSM-PDs) with a modulation-doped heterostructure operating at the wavelength of 1.3 μm have been simulated by a two-dimensional device simulator. Simulation results show that the optimized device structure has a 30-nm-thick cap layer with Nd = 2×1017 cm -3, a 10-nm-thick spacer layer, and 7-μm-wide finger spacing to exhibit the largest photocurrent response and shortest decay response time.
| Original language | English |
|---|---|
| Pages (from-to) | 2167-2169 |
| Number of pages | 3 |
| Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
| Volume | 5 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2008 Dec 1 |
| Event | 7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, United States Duration: 2007 Sep 16 → 2007 Sep 21 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
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Tsai, S. L., Wu, J. S., Lin, H. J., Lin, D. Y., & Zheng, J. Y. (2008). Simulation and design of InGaAsN metal-semiconductor-metal photodetectors for long wavelength optical communications. Physica Status Solidi (C) Current Topics in Solid State Physics, 5(6), 2167-2169. https://doi.org/10.1002/pssc.200778510