Abstract
Optical properties of InGaAsN/AlGaAs metal-semi-conductor-metal photodetectors (MSM-PDs) with a modulation-doped heterostructure operating at the wavelength of 1.3 μm have been simulated by a two-dimensional device simulator. Simulation results show that the optimized device structure has a 30-nm-thick cap layer with Nd = 2×1017 cm -3, a 10-nm-thick spacer layer, and 7-μm-wide finger spacing to exhibit the largest photocurrent response and shortest decay response time.
| Original language | English |
|---|---|
| Pages (from-to) | 2167-2169 |
| Number of pages | 3 |
| Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
| Volume | 5 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2008 Dec 1 |
| Event | 7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, United States Duration: 2007 Sep 16 → 2007 Sep 21 |
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All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
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Simulation and design of InGaAsN metal-semiconductor-metal photodetectors for long wavelength optical communications. / Tsai, Shin Li; Wu, Jenq Shinn; Lin, Hung Ji; Lin, Der Yuh; Zheng, Jin Yao.
In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 5, No. 6, 01.12.2008, p. 2167-2169.Research output: Contribution to journal › Conference article
TY - JOUR
T1 - Simulation and design of InGaAsN metal-semiconductor-metal photodetectors for long wavelength optical communications
AU - Tsai, Shin Li
AU - Wu, Jenq Shinn
AU - Lin, Hung Ji
AU - Lin, Der Yuh
AU - Zheng, Jin Yao
PY - 2008/12/1
Y1 - 2008/12/1
N2 - Optical properties of InGaAsN/AlGaAs metal-semi-conductor-metal photodetectors (MSM-PDs) with a modulation-doped heterostructure operating at the wavelength of 1.3 μm have been simulated by a two-dimensional device simulator. Simulation results show that the optimized device structure has a 30-nm-thick cap layer with Nd = 2×1017 cm -3, a 10-nm-thick spacer layer, and 7-μm-wide finger spacing to exhibit the largest photocurrent response and shortest decay response time.
AB - Optical properties of InGaAsN/AlGaAs metal-semi-conductor-metal photodetectors (MSM-PDs) with a modulation-doped heterostructure operating at the wavelength of 1.3 μm have been simulated by a two-dimensional device simulator. Simulation results show that the optimized device structure has a 30-nm-thick cap layer with Nd = 2×1017 cm -3, a 10-nm-thick spacer layer, and 7-μm-wide finger spacing to exhibit the largest photocurrent response and shortest decay response time.
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U2 - 10.1002/pssc.200778510
DO - 10.1002/pssc.200778510
M3 - Conference article
AN - SCOPUS:77951232950
VL - 5
SP - 2167
EP - 2169
JO - Physica Status Solidi (C) Current Topics in Solid State Physics
JF - Physica Status Solidi (C) Current Topics in Solid State Physics
SN - 1862-6351
IS - 6
ER -