Simulation and design of InGaAsN metal-semiconductor-metal photodetectors for long wavelength optical communications

Shin Li Tsai; Jenq Shinn Wu; Hung Ji Lin; Der Yuh Lin; Jin Yao Zheng

doi:10.1002/pssc.200778510

Simulation and design of InGaAsN metal-semiconductor-metal photodetectors for long wavelength optical communications

Shin Li Tsai, Jenq Shinn Wu, Hung Ji Lin, Der Yuh Lin, Jin Yao Zheng

Department of Electronic Engineering

Research output: Contribution to journal › Conference article

Abstract

Optical properties of InGaAsN/AlGaAs metal-semi-conductor-metal photodetectors (MSM-PDs) with a modulation-doped heterostructure operating at the wavelength of 1.3 μm have been simulated by a two-dimensional device simulator. Simulation results show that the optimized device structure has a 30-nm-thick cap layer with N_d = 2×10¹⁷ cm ^-3, a 10-nm-thick spacer layer, and 7-μm-wide finger spacing to exhibit the largest photocurrent response and shortest decay response time.

Original language	English
Pages (from-to)	2167-2169
Number of pages	3
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	5
Issue number	6
DOIs	https://doi.org/10.1002/pssc.200778510
Publication status	Published - 2008 Dec 1
Event	7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, United States Duration: 2007 Sep 16 → 2007 Sep 21

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All Science Journal Classification (ASJC) codes

Condensed Matter Physics

Cite this

Tsai, S. L., Wu, J. S., Lin, H. J., Lin, D. Y., & Zheng, J. Y. (2008). Simulation and design of InGaAsN metal-semiconductor-metal photodetectors for long wavelength optical communications. Physica Status Solidi (C) Current Topics in Solid State Physics, 5(6), 2167-2169. https://doi.org/10.1002/pssc.200778510

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abstract = "Optical properties of InGaAsN/AlGaAs metal-semi-conductor-metal photodetectors (MSM-PDs) with a modulation-doped heterostructure operating at the wavelength of 1.3 μm have been simulated by a two-dimensional device simulator. Simulation results show that the optimized device structure has a 30-nm-thick cap layer with Nd = 2×1017 cm -3, a 10-nm-thick spacer layer, and 7-μm-wide finger spacing to exhibit the largest photocurrent response and shortest decay response time.",

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AU - Tsai, Shin Li

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AU - Lin, Der Yuh

AU - Zheng, Jin Yao

PY - 2008/12/1

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AB - Optical properties of InGaAsN/AlGaAs metal-semi-conductor-metal photodetectors (MSM-PDs) with a modulation-doped heterostructure operating at the wavelength of 1.3 μm have been simulated by a two-dimensional device simulator. Simulation results show that the optimized device structure has a 30-nm-thick cap layer with Nd = 2×1017 cm -3, a 10-nm-thick spacer layer, and 7-μm-wide finger spacing to exhibit the largest photocurrent response and shortest decay response time.

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10.1002/pssc.200778510