Simulation and design of InGaAsN metal-semiconductor-metal photodetectors for long wavelength optical communications

Shin Li Tsai, Jenq Shinn Wu, Hung Ji Lin, Der Yuh Lin, Jin Yao Zheng

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)

Abstract

Optical properties of InGaAsN/AlGaAs metal-semi-conductor-metal photodetectors (MSM-PDs) with a modulation-doped heterostructure operating at the wavelength of 1.3 μm have been simulated by a two-dimensional device simulator. Simulation results show that the optimized device structure has a 30-nm-thick cap layer with Nd = 2×1017 cm -3, a 10-nm-thick spacer layer, and 7-μm-wide finger spacing to exhibit the largest photocurrent response and shortest decay response time.

Original languageEnglish
Pages (from-to)2167-2169
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume5
Issue number6
DOIs
Publication statusPublished - 2008 Dec 1
Event7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, United States
Duration: 2007 Sep 162007 Sep 21

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

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