Abstract
A new fabrication process of T-shaped gates has been developed using a deep-UV/electron-beam/deep-UV (DUV/EB/DUV) tri-layer resist system and electron-beam lithography for the first time. The simple process accomplished a submicron T-shaped gate by a single exposure and a single development step. The narrow/wide/narrow opening of the DUV/EB/DUV resist structure can be accurately controlled by the e-beam dosage and the development conditions. Differences in the sensitivities of the DUV resist and the EB resist were investigated. Due to the lower sensitivity of the adopted DUV resist to the electron beam, the smaller opening of the DUV resist layer was obtained. The higher sensitivity of the EB resist resulted in a wider opening in the middle resist layer. A 0.15-μm-gate-length T-shaped gate can be easily formed by the short-process-time and low-production-cost hybrid DUV/EB/DUV resist approach.
| Original language | English |
|---|---|
| Title of host publication | Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers |
| Editors | Y. Aoyagi, N. Atoda, T. Fukui, M. Komuro, M. Kotera, al et al |
| Pages | 6347-6695 |
| Number of pages | 349 |
| Edition | 12 B |
| Publication status | Published - 1996 Dec 1 |
| Event | Proceedings of the 1996 9th International MicroProcess Conference, MPC'96 - Kyushu, Jpn Duration: 1996 Jul 8 → 1996 Jul 11 |
Publication series
| Name | Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers |
|---|---|
| Number | 12 B |
| Volume | 35 |
Other
| Other | Proceedings of the 1996 9th International MicroProcess Conference, MPC'96 |
|---|---|
| City | Kyushu, Jpn |
| Period | 96-07-08 → 96-07-11 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
Cite this
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Simple fabrication process of T-shaped gates using a deep-UV/electron-beam/deep-UV tri-layer resist system and electron-beam lithography. / Lai, Yeong-Lin; Chang, Edward Y.; Chang, Chun Yen; Yang, Hung Pin D.; Nakamura, K.; Shy, S. L.
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers. ed. / Y. Aoyagi; N. Atoda; T. Fukui; M. Komuro; M. Kotera; al et al. 12 B. ed. 1996. p. 6347-6695 (Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers; Vol. 35, No. 12 B).Research output: Chapter in Book/Report/Conference proceeding › Chapter
TY - CHAP
T1 - Simple fabrication process of T-shaped gates using a deep-UV/electron-beam/deep-UV tri-layer resist system and electron-beam lithography
AU - Lai, Yeong-Lin
AU - Chang, Edward Y.
AU - Chang, Chun Yen
AU - Yang, Hung Pin D.
AU - Nakamura, K.
AU - Shy, S. L.
PY - 1996/12/1
Y1 - 1996/12/1
N2 - A new fabrication process of T-shaped gates has been developed using a deep-UV/electron-beam/deep-UV (DUV/EB/DUV) tri-layer resist system and electron-beam lithography for the first time. The simple process accomplished a submicron T-shaped gate by a single exposure and a single development step. The narrow/wide/narrow opening of the DUV/EB/DUV resist structure can be accurately controlled by the e-beam dosage and the development conditions. Differences in the sensitivities of the DUV resist and the EB resist were investigated. Due to the lower sensitivity of the adopted DUV resist to the electron beam, the smaller opening of the DUV resist layer was obtained. The higher sensitivity of the EB resist resulted in a wider opening in the middle resist layer. A 0.15-μm-gate-length T-shaped gate can be easily formed by the short-process-time and low-production-cost hybrid DUV/EB/DUV resist approach.
AB - A new fabrication process of T-shaped gates has been developed using a deep-UV/electron-beam/deep-UV (DUV/EB/DUV) tri-layer resist system and electron-beam lithography for the first time. The simple process accomplished a submicron T-shaped gate by a single exposure and a single development step. The narrow/wide/narrow opening of the DUV/EB/DUV resist structure can be accurately controlled by the e-beam dosage and the development conditions. Differences in the sensitivities of the DUV resist and the EB resist were investigated. Due to the lower sensitivity of the adopted DUV resist to the electron beam, the smaller opening of the DUV resist layer was obtained. The higher sensitivity of the EB resist resulted in a wider opening in the middle resist layer. A 0.15-μm-gate-length T-shaped gate can be easily formed by the short-process-time and low-production-cost hybrid DUV/EB/DUV resist approach.
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M3 - Chapter
AN - SCOPUS:0030378136
T3 - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers
SP - 6347
EP - 6695
BT - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers
A2 - Aoyagi, Y.
A2 - Atoda, N.
A2 - Fukui, T.
A2 - Komuro, M.
A2 - Kotera, M.
A2 - et al, al
ER -