Simple fabrication process of T-shaped gates using a deep-UV/electron-beam/deep-UV tri-layer resist system and electron-beam lithography

Yeong-Lin Lai, Edward Y. Chang, Chun Yen Chang, Hung Pin D. Yang, K. Nakamura, S. L. Shy

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

A new fabrication process of T-shaped gates has been developed using a deep-UV/electron-beam/deep-UV (DUV/EB/DUV) tri-layer resist system and electron-beam lithography for the first time. The simple process accomplished a submicron T-shaped gate by a single exposure and a single development step. The narrow/wide/narrow opening of the DUV/EB/DUV resist structure can be accurately controlled by the e-beam dosage and the development conditions. Differences in the sensitivities of the DUV resist and the EB resist were investigated. Due to the lower sensitivity of the adopted DUV resist to the electron beam, the smaller opening of the DUV resist layer was obtained. The higher sensitivity of the EB resist resulted in a wider opening in the middle resist layer. A 0.15-μm-gate-length T-shaped gate can be easily formed by the short-process-time and low-production-cost hybrid DUV/EB/DUV resist approach.

Original languageEnglish
Title of host publicationJapanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers
EditorsY. Aoyagi, N. Atoda, T. Fukui, M. Komuro, M. Kotera, al et al
Pages6347-6695
Number of pages349
Edition12 B
Publication statusPublished - 1996 Dec 1
EventProceedings of the 1996 9th International MicroProcess Conference, MPC'96 - Kyushu, Jpn
Duration: 1996 Jul 81996 Jul 11

Publication series

NameJapanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers
Number12 B
Volume35

Other

OtherProceedings of the 1996 9th International MicroProcess Conference, MPC'96
CityKyushu, Jpn
Period96-07-0896-07-11

Fingerprint

Electron beam lithography
Electron beams
lithography
electron beams
Fabrication
fabrication
sensitivity
production costs
dosage
Costs

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Lai, Y-L., Chang, E. Y., Chang, C. Y., Yang, H. P. D., Nakamura, K., & Shy, S. L. (1996). Simple fabrication process of T-shaped gates using a deep-UV/electron-beam/deep-UV tri-layer resist system and electron-beam lithography. In Y. Aoyagi, N. Atoda, T. Fukui, M. Komuro, M. Kotera, & A. et al (Eds.), Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers (12 B ed., pp. 6347-6695). (Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers; Vol. 35, No. 12 B).
Lai, Yeong-Lin ; Chang, Edward Y. ; Chang, Chun Yen ; Yang, Hung Pin D. ; Nakamura, K. ; Shy, S. L. / Simple fabrication process of T-shaped gates using a deep-UV/electron-beam/deep-UV tri-layer resist system and electron-beam lithography. Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers. editor / Y. Aoyagi ; N. Atoda ; T. Fukui ; M. Komuro ; M. Kotera ; al et al. 12 B. ed. 1996. pp. 6347-6695 (Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers; 12 B).
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Lai, Y-L, Chang, EY, Chang, CY, Yang, HPD, Nakamura, K & Shy, SL 1996, Simple fabrication process of T-shaped gates using a deep-UV/electron-beam/deep-UV tri-layer resist system and electron-beam lithography. in Y Aoyagi, N Atoda, T Fukui, M Komuro, M Kotera & A et al (eds), Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers. 12 B edn, Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, no. 12 B, vol. 35, pp. 6347-6695, Proceedings of the 1996 9th International MicroProcess Conference, MPC'96, Kyushu, Jpn, 96-07-08.

Simple fabrication process of T-shaped gates using a deep-UV/electron-beam/deep-UV tri-layer resist system and electron-beam lithography. / Lai, Yeong-Lin; Chang, Edward Y.; Chang, Chun Yen; Yang, Hung Pin D.; Nakamura, K.; Shy, S. L.

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers. ed. / Y. Aoyagi; N. Atoda; T. Fukui; M. Komuro; M. Kotera; al et al. 12 B. ed. 1996. p. 6347-6695 (Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers; Vol. 35, No. 12 B).

Research output: Chapter in Book/Report/Conference proceedingChapter

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AU - Lai, Yeong-Lin

AU - Chang, Edward Y.

AU - Chang, Chun Yen

AU - Yang, Hung Pin D.

AU - Nakamura, K.

AU - Shy, S. L.

PY - 1996/12/1

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N2 - A new fabrication process of T-shaped gates has been developed using a deep-UV/electron-beam/deep-UV (DUV/EB/DUV) tri-layer resist system and electron-beam lithography for the first time. The simple process accomplished a submicron T-shaped gate by a single exposure and a single development step. The narrow/wide/narrow opening of the DUV/EB/DUV resist structure can be accurately controlled by the e-beam dosage and the development conditions. Differences in the sensitivities of the DUV resist and the EB resist were investigated. Due to the lower sensitivity of the adopted DUV resist to the electron beam, the smaller opening of the DUV resist layer was obtained. The higher sensitivity of the EB resist resulted in a wider opening in the middle resist layer. A 0.15-μm-gate-length T-shaped gate can be easily formed by the short-process-time and low-production-cost hybrid DUV/EB/DUV resist approach.

AB - A new fabrication process of T-shaped gates has been developed using a deep-UV/electron-beam/deep-UV (DUV/EB/DUV) tri-layer resist system and electron-beam lithography for the first time. The simple process accomplished a submicron T-shaped gate by a single exposure and a single development step. The narrow/wide/narrow opening of the DUV/EB/DUV resist structure can be accurately controlled by the e-beam dosage and the development conditions. Differences in the sensitivities of the DUV resist and the EB resist were investigated. Due to the lower sensitivity of the adopted DUV resist to the electron beam, the smaller opening of the DUV resist layer was obtained. The higher sensitivity of the EB resist resulted in a wider opening in the middle resist layer. A 0.15-μm-gate-length T-shaped gate can be easily formed by the short-process-time and low-production-cost hybrid DUV/EB/DUV resist approach.

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M3 - Chapter

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T3 - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers

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A2 - Aoyagi, Y.

A2 - Atoda, N.

A2 - Fukui, T.

A2 - Komuro, M.

A2 - Kotera, M.

A2 - et al, al

ER -

Lai Y-L, Chang EY, Chang CY, Yang HPD, Nakamura K, Shy SL. Simple fabrication process of T-shaped gates using a deep-UV/electron-beam/deep-UV tri-layer resist system and electron-beam lithography. In Aoyagi Y, Atoda N, Fukui T, Komuro M, Kotera M, et al A, editors, Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers. 12 B ed. 1996. p. 6347-6695. (Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers; 12 B).