Silicon two-dimensional phononic crystal resonators using alternate defects

Nan Wang, Fu Li Hsiao, Moorthi Palaniapan, Chengkuo Lee

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

We present the numerical and experimental investigations of micromechanical resonators made by creating alternate defects with different central-hole radii (r′) in a two-dimensional (2-D) phononic crystal (PnC) slab. The PnC structures were fabricated by etching a square array of cylindrical air holes in a 10 m thick free-standing silicon plate using a CMOS-compatible process. Preliminary experimental results show that the performance of the PnC resonators in terms of resonant frequency, Q factor, and insertion loss (IL) is highly dependent on r′. A Q factor of more than 3000 is achieved for the case of r′ 6 m while all the designed resonators with alternate defects have higher Q factor and lower IL than the resonators based on the normal Fabry-Perot structure due to the reduction in the mode mismatch.

Original languageEnglish
Article number234102
JournalApplied Physics Letters
Volume99
Issue number23
DOIs
Publication statusPublished - 2011 Dec 5

Fingerprint

Q factors
resonators
defects
silicon
insertion loss
crystals
resonant frequencies
CMOS
slabs
etching
crystal structure
radii
air

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Wang, Nan ; Hsiao, Fu Li ; Palaniapan, Moorthi ; Lee, Chengkuo. / Silicon two-dimensional phononic crystal resonators using alternate defects. In: Applied Physics Letters. 2011 ; Vol. 99, No. 23.
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Silicon two-dimensional phononic crystal resonators using alternate defects. / Wang, Nan; Hsiao, Fu Li; Palaniapan, Moorthi; Lee, Chengkuo.

In: Applied Physics Letters, Vol. 99, No. 23, 234102, 05.12.2011.

Research output: Contribution to journalArticle

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