Silicon nanowire networks for the application of field effect phototransistor

Bohr Ran Huang, Jung Fu Hsu, Chien Sheng Huang, Yu-Tai Shih, Kao Sheng Lu

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

A random network of silicon nanowires was synthesized on Si 3N 4/Si substrate via a catalytic reaction in N 2 atmosphere at 1000 °C using a parallel plate structure. The nanowires were completely amorphous with an average diameter of 40-80 nm. A commercial high-brightness light emitting diodes was used as the light source in the gate of the field effect phototransistor. It was found that drain current was proportional to the light intensity. It is suggested that the current gain of the photoresponse under the red light illumination is smaller compared to that under the blue light illumination. The maximal current gain increases approximately 30 times under the blue light illumination.

Original languageEnglish
Pages (from-to)1197-1200
Number of pages4
JournalMaterials Science and Engineering C
Volume27
Issue number5-8 SPEC. ISS.
DOIs
Publication statusPublished - 2007 Sep 1

Fingerprint

Phototransistors
phototransistors
Silicon
Nanowires
nanowires
illumination
Lighting
silicon
parallel plates
luminous intensity
Drain current
light sources
brightness
light emitting diodes
Light emitting diodes
Light sources
atmospheres
Luminance
Substrates

All Science Journal Classification (ASJC) codes

  • Biomaterials

Cite this

Huang, Bohr Ran ; Hsu, Jung Fu ; Huang, Chien Sheng ; Shih, Yu-Tai ; Lu, Kao Sheng. / Silicon nanowire networks for the application of field effect phototransistor. In: Materials Science and Engineering C. 2007 ; Vol. 27, No. 5-8 SPEC. ISS. pp. 1197-1200.
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Silicon nanowire networks for the application of field effect phototransistor. / Huang, Bohr Ran; Hsu, Jung Fu; Huang, Chien Sheng; Shih, Yu-Tai; Lu, Kao Sheng.

In: Materials Science and Engineering C, Vol. 27, No. 5-8 SPEC. ISS., 01.09.2007, p. 1197-1200.

Research output: Contribution to journalArticle

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