Abstract
In this study, performance and characteristics of blue InGaN tunnel-junction light-emitting diode (TJ LED) are investigated theoretically. Simulation results show that, dissimilar to the single LED, Shockley-Read-Hall (SRH) and Auger recombination are critical issues influencing the output performance of blue TJ LEDs in both low and high current regions. In realizing high-performance TJ LEDs, to pursue the advantages of both satisfactory crystalline quality and suppressed SRH recombination loss, a simplified structure with single quantum well and without electron-blocking layer is proposed as the unit LED structure that is utilized to stack the TJ LED. Simulation results indicate that the TJ LED with simplified unit LED structure possesses good performance at high output power, which provides a practical and cost-effective way for the fabrication of TJ LEDs, especially when more unit LEDs need to be cascaded.
| Original language | English |
|---|---|
| Article number | 1800271 |
| Journal | Physica Status Solidi (A) Applications and Materials Science |
| Volume | 215 |
| Issue number | 21 |
| DOIs | |
| Publication status | Published - 2018 Nov 7 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
- Materials Chemistry
Cite this
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Shockley-Read-Hall and Auger Recombination in Blue InGaN Tunnel-Junction Light-Emitting Diodes. / Chang, Jih-Yuan; Shih, Ya Hsuan; Huang, Man-Fang; Chen, Fang Ming; Kuo, Yen-Kuang.
In: Physica Status Solidi (A) Applications and Materials Science, Vol. 215, No. 21, 1800271, 07.11.2018.Research output: Contribution to journal › Article
TY - JOUR
T1 - Shockley-Read-Hall and Auger Recombination in Blue InGaN Tunnel-Junction Light-Emitting Diodes
AU - Chang, Jih-Yuan
AU - Shih, Ya Hsuan
AU - Huang, Man-Fang
AU - Chen, Fang Ming
AU - Kuo, Yen-Kuang
PY - 2018/11/7
Y1 - 2018/11/7
N2 - In this study, performance and characteristics of blue InGaN tunnel-junction light-emitting diode (TJ LED) are investigated theoretically. Simulation results show that, dissimilar to the single LED, Shockley-Read-Hall (SRH) and Auger recombination are critical issues influencing the output performance of blue TJ LEDs in both low and high current regions. In realizing high-performance TJ LEDs, to pursue the advantages of both satisfactory crystalline quality and suppressed SRH recombination loss, a simplified structure with single quantum well and without electron-blocking layer is proposed as the unit LED structure that is utilized to stack the TJ LED. Simulation results indicate that the TJ LED with simplified unit LED structure possesses good performance at high output power, which provides a practical and cost-effective way for the fabrication of TJ LEDs, especially when more unit LEDs need to be cascaded.
AB - In this study, performance and characteristics of blue InGaN tunnel-junction light-emitting diode (TJ LED) are investigated theoretically. Simulation results show that, dissimilar to the single LED, Shockley-Read-Hall (SRH) and Auger recombination are critical issues influencing the output performance of blue TJ LEDs in both low and high current regions. In realizing high-performance TJ LEDs, to pursue the advantages of both satisfactory crystalline quality and suppressed SRH recombination loss, a simplified structure with single quantum well and without electron-blocking layer is proposed as the unit LED structure that is utilized to stack the TJ LED. Simulation results indicate that the TJ LED with simplified unit LED structure possesses good performance at high output power, which provides a practical and cost-effective way for the fabrication of TJ LEDs, especially when more unit LEDs need to be cascaded.
UR - http://www.scopus.com/inward/record.url?scp=85050851609&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85050851609&partnerID=8YFLogxK
U2 - 10.1002/pssa.201800271
DO - 10.1002/pssa.201800271
M3 - Article
AN - SCOPUS:85050851609
VL - 215
JO - Physica Status Solidi (A) Applications and Materials Science
JF - Physica Status Solidi (A) Applications and Materials Science
SN - 1862-6300
IS - 21
M1 - 1800271
ER -