Shockley-Read-Hall and Auger Recombination in Blue InGaN Tunnel-Junction Light-Emitting Diodes

Jih-Yuan Chang, Ya Hsuan Shih, Man-Fang Huang, Fang Ming Chen, Yen-Kuang Kuo

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In this study, performance and characteristics of blue InGaN tunnel-junction light-emitting diode (TJ LED) are investigated theoretically. Simulation results show that, dissimilar to the single LED, Shockley-Read-Hall (SRH) and Auger recombination are critical issues influencing the output performance of blue TJ LEDs in both low and high current regions. In realizing high-performance TJ LEDs, to pursue the advantages of both satisfactory crystalline quality and suppressed SRH recombination loss, a simplified structure with single quantum well and without electron-blocking layer is proposed as the unit LED structure that is utilized to stack the TJ LED. Simulation results indicate that the TJ LED with simplified unit LED structure possesses good performance at high output power, which provides a practical and cost-effective way for the fabrication of TJ LEDs, especially when more unit LEDs need to be cascaded.

Original languageEnglish
Article number1800271
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume215
Issue number21
DOIs
Publication statusPublished - 2018 Nov 7

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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