Shapiro steps observed in a superconducting single electron transistor

Saxon Liou; Watson Kuo; Y. W. Suen; W. H. Hsieh; C. S. Wu; C. D. Chen

Shapiro steps observed in a superconducting single electron transistor

Saxon Liou, Watson Kuo, Y. W. Suen, W. H. Hsieh, C. S. Wu, C. D. Chen

Department of Physics

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The de current-voltage (IV) characteristics of a superconducting single electron transistor irradiated with microwaves up to 18 GHz are experimentally studied. The switching current as a function of gate voltage demonstrates clear phase-charge duality in a Josephson junction. At higher microwave power levels, Shapiro steps in IV characteristics are observed. The step height in IV can be analyzed using the model an ac-voltage source applied to a single Josephson junction.

Original language	English
Pages (from-to)	230-236
Number of pages	7
Journal	Chinese Journal of Physics
Volume	45
Issue number	2 II
Publication status	Published - 2007 Apr 1

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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title = "Shapiro steps observed in a superconducting single electron transistor",

abstract = "The de current-voltage (IV) characteristics of a superconducting single electron transistor irradiated with microwaves up to 18 GHz are experimentally studied. The switching current as a function of gate voltage demonstrates clear phase-charge duality in a Josephson junction. At higher microwave power levels, Shapiro steps in IV characteristics are observed. The step height in IV can be analyzed using the model an ac-voltage source applied to a single Josephson junction.",

author = "Saxon Liou and Watson Kuo and Suen, {Y. W.} and Hsieh, {W. H.} and Wu, {C. S.} and Chen, {C. D.}",

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AU - Liou, Saxon

AU - Kuo, Watson

AU - Suen, Y. W.

AU - Hsieh, W. H.

AU - Wu, C. S.

AU - Chen, C. D.

PY - 2007/4/1

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N2 - The de current-voltage (IV) characteristics of a superconducting single electron transistor irradiated with microwaves up to 18 GHz are experimentally studied. The switching current as a function of gate voltage demonstrates clear phase-charge duality in a Josephson junction. At higher microwave power levels, Shapiro steps in IV characteristics are observed. The step height in IV can be analyzed using the model an ac-voltage source applied to a single Josephson junction.

AB - The de current-voltage (IV) characteristics of a superconducting single electron transistor irradiated with microwaves up to 18 GHz are experimentally studied. The switching current as a function of gate voltage demonstrates clear phase-charge duality in a Josephson junction. At higher microwave power levels, Shapiro steps in IV characteristics are observed. The step height in IV can be analyzed using the model an ac-voltage source applied to a single Josephson junction.

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