Shapiro steps observed in a superconducting single electron transistor

Saxon Liou, Watson Kuo, Y. W. Suen, W. H. Hsieh, C. S. Wu, C. D. Chen

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Abstract

The de current-voltage (IV) characteristics of a superconducting single electron transistor irradiated with microwaves up to 18 GHz are experimentally studied. The switching current as a function of gate voltage demonstrates clear phase-charge duality in a Josephson junction. At higher microwave power levels, Shapiro steps in IV characteristics are observed. The step height in IV can be analyzed using the model an ac-voltage source applied to a single Josephson junction.

Original languageEnglish
Pages (from-to)230-236
Number of pages7
JournalChinese Journal of Physics
Volume45
Issue number2 II
Publication statusPublished - 2007 Apr 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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  • Cite this

    Liou, S., Kuo, W., Suen, Y. W., Hsieh, W. H., Wu, C. S., & Chen, C. D. (2007). Shapiro steps observed in a superconducting single electron transistor. Chinese Journal of Physics, 45(2 II), 230-236.