Selective growth of single InAs quantum dots using strain engineering

B. C. Lee, S. D. Lin, C. P. Lee, H. M. Lee, Jong-Ching Wu, K. W. Sun

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

A method to achieve ordering and selective positioning of single InAs self-assembled quantum dots (QDs) has been developed. The selective growth was achieved by manipulating the strain distribution on the sample surface. The QDs are formed on predesigned mesas with added strain. Single dots were obtained on small mesas. Using this technique, two-dimensional single QD arrays have been achieved.

Original languageEnglish
Pages (from-to)326-328
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number2
DOIs
Publication statusPublished - 2002 Jan 14

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quantum dots
mesas
engineering
strain distribution
positioning

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Lee, B. C. ; Lin, S. D. ; Lee, C. P. ; Lee, H. M. ; Wu, Jong-Ching ; Sun, K. W. / Selective growth of single InAs quantum dots using strain engineering. In: Applied Physics Letters. 2002 ; Vol. 80, No. 2. pp. 326-328.
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Selective growth of single InAs quantum dots using strain engineering. / Lee, B. C.; Lin, S. D.; Lee, C. P.; Lee, H. M.; Wu, Jong-Ching; Sun, K. W.

In: Applied Physics Letters, Vol. 80, No. 2, 14.01.2002, p. 326-328.

Research output: Contribution to journalArticle

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