Schottky barrier inhomogeneity for graphene/Si-nanowire arrays/n-type Si Schottky diodes

Jian Jhou Zeng, Yow-Jon Lin

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

The current-voltage characteristics of graphene/Si-nanowire (SiNW) arrays/n-type Si Schottky diodes with and without H2O2 treatment were measured in the temperature range of -150 ∼ 150°C. The forward-bias current-voltage characteristics were analyzed on the basis of thermionic emission theory. It is found that the barrier height decreases and the ideality factor increases with the decreased temperatures. Such behavior is attributed to barrier inhomogeneities. It is shown that both Schottky barrier inhomogeneity and the T0 effect are affected by H2O 2 treatment, implying that charge traps in the SiNWs have a noticeable effect on Schottky barrier inhomogeneity for graphene/SiNWs/n-type Si diodes.

Original languageEnglish
Article number133506
JournalApplied Physics Letters
Volume104
Issue number13
DOIs
Publication statusPublished - 2014 Mar 31

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Schottky diodes
graphene
inhomogeneity
nanowires
thermionic emission
electric potential
diodes
traps
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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abstract = "The current-voltage characteristics of graphene/Si-nanowire (SiNW) arrays/n-type Si Schottky diodes with and without H2O2 treatment were measured in the temperature range of -150 ∼ 150°C. The forward-bias current-voltage characteristics were analyzed on the basis of thermionic emission theory. It is found that the barrier height decreases and the ideality factor increases with the decreased temperatures. Such behavior is attributed to barrier inhomogeneities. It is shown that both Schottky barrier inhomogeneity and the T0 effect are affected by H2O 2 treatment, implying that charge traps in the SiNWs have a noticeable effect on Schottky barrier inhomogeneity for graphene/SiNWs/n-type Si diodes.",
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Schottky barrier inhomogeneity for graphene/Si-nanowire arrays/n-type Si Schottky diodes. / Zeng, Jian Jhou; Lin, Yow-Jon.

In: Applied Physics Letters, Vol. 104, No. 13, 133506, 31.03.2014.

Research output: Contribution to journalArticle

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