Schottky barrier height and surface state density of Ni/Au contacts to (NH4)2Sx-treated n-type GaN

Ching Ting Lee, Yow Jon Lin, Day Shan Liu

Research output: Contribution to journalArticle

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Abstract

By using capacitance-voltage and photoluminescence measurements, we have investigated the Schottky barrier height and surface state density of Ni/Au contacts to n-type GaN with, and without, (NH4)2Sx treatment. The Schottky barrier height of 1.099 eV is very close to the Schottky limit of 1.10 eV for Au/Ni/n-type GaN treated with (NH4)2Sx. This result indicates that there is no severe Fermi level pinning induced by surface states. The reduction of the surface state density for the (NH4)2Sx-treated n-type GaN is attributed to the decrease of dangling bonds and occupation of nitrogen-related vacancies due to the formation of Ga-S bonds.

Original languageEnglish
Pages (from-to)2573-2575
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number16
DOIs
Publication statusPublished - 2001 Oct 15

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electric contacts
occupation
electrical measurement
capacitance
photoluminescence
nitrogen

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

@article{61d9cc0935b74761a168600c08b49331,
title = "Schottky barrier height and surface state density of Ni/Au contacts to (NH4)2Sx-treated n-type GaN",
abstract = "By using capacitance-voltage and photoluminescence measurements, we have investigated the Schottky barrier height and surface state density of Ni/Au contacts to n-type GaN with, and without, (NH4)2Sx treatment. The Schottky barrier height of 1.099 eV is very close to the Schottky limit of 1.10 eV for Au/Ni/n-type GaN treated with (NH4)2Sx. This result indicates that there is no severe Fermi level pinning induced by surface states. The reduction of the surface state density for the (NH4)2Sx-treated n-type GaN is attributed to the decrease of dangling bonds and occupation of nitrogen-related vacancies due to the formation of Ga-S bonds.",
author = "Lee, {Ching Ting} and Lin, {Yow Jon} and Liu, {Day Shan}",
year = "2001",
month = "10",
day = "15",
doi = "10.1063/1.1410358",
language = "English",
volume = "79",
pages = "2573--2575",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "16",

}

Schottky barrier height and surface state density of Ni/Au contacts to (NH4)2Sx-treated n-type GaN. / Lee, Ching Ting; Lin, Yow Jon; Liu, Day Shan.

In: Applied Physics Letters, Vol. 79, No. 16, 15.10.2001, p. 2573-2575.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Schottky barrier height and surface state density of Ni/Au contacts to (NH4)2Sx-treated n-type GaN

AU - Lee, Ching Ting

AU - Lin, Yow Jon

AU - Liu, Day Shan

PY - 2001/10/15

Y1 - 2001/10/15

N2 - By using capacitance-voltage and photoluminescence measurements, we have investigated the Schottky barrier height and surface state density of Ni/Au contacts to n-type GaN with, and without, (NH4)2Sx treatment. The Schottky barrier height of 1.099 eV is very close to the Schottky limit of 1.10 eV for Au/Ni/n-type GaN treated with (NH4)2Sx. This result indicates that there is no severe Fermi level pinning induced by surface states. The reduction of the surface state density for the (NH4)2Sx-treated n-type GaN is attributed to the decrease of dangling bonds and occupation of nitrogen-related vacancies due to the formation of Ga-S bonds.

AB - By using capacitance-voltage and photoluminescence measurements, we have investigated the Schottky barrier height and surface state density of Ni/Au contacts to n-type GaN with, and without, (NH4)2Sx treatment. The Schottky barrier height of 1.099 eV is very close to the Schottky limit of 1.10 eV for Au/Ni/n-type GaN treated with (NH4)2Sx. This result indicates that there is no severe Fermi level pinning induced by surface states. The reduction of the surface state density for the (NH4)2Sx-treated n-type GaN is attributed to the decrease of dangling bonds and occupation of nitrogen-related vacancies due to the formation of Ga-S bonds.

UR - http://www.scopus.com/inward/record.url?scp=0035886283&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035886283&partnerID=8YFLogxK

U2 - 10.1063/1.1410358

DO - 10.1063/1.1410358

M3 - Article

AN - SCOPUS:0035886283

VL - 79

SP - 2573

EP - 2575

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 16

ER -