Abstract
The relationship between the Schottky barrier height and nitrogen-vacancy-related defects in Ti alloyed Ohmic contacts to n-type GaN (n-GaN) was analyzed. The n-GaN epitaxial layers were grown on c-plane sapphire substrates using a metalorganic chemical vapor deposition (MOCVD) system. It was found that the alloyed Ohmic behavior of the contacts can be attributed to the presence of a large number of nitrogen-vacancy-related defects and not to the formation of lower barriers at the annealed Ti/n-GaN interface. The results show that the large number of interface states, related to nitrogen-vacancy defects led to the pinning of the Fermi level at 0.5 eV below the conduction-band edge and left the GaN surface very heavily n type.
| Original language | English |
|---|---|
| Pages (from-to) | 571-575 |
| Number of pages | 5 |
| Journal | Journal of Applied Physics |
| Volume | 95 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2004 Jan 15 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
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Schottky barrier height and nitrogen-vacancy-related defects in Ti alloyed Ohmic contacts to n-GaN. / Lin, Yow Jon; Chen, Yao Ming; Cheng, Tzyy Jon; Ker, Quantum.
In: Journal of Applied Physics, Vol. 95, No. 2, 15.01.2004, p. 571-575.Research output: Contribution to journal › Article
TY - JOUR
T1 - Schottky barrier height and nitrogen-vacancy-related defects in Ti alloyed Ohmic contacts to n-GaN
AU - Lin, Yow Jon
AU - Chen, Yao Ming
AU - Cheng, Tzyy Jon
AU - Ker, Quantum
PY - 2004/1/15
Y1 - 2004/1/15
N2 - The relationship between the Schottky barrier height and nitrogen-vacancy-related defects in Ti alloyed Ohmic contacts to n-type GaN (n-GaN) was analyzed. The n-GaN epitaxial layers were grown on c-plane sapphire substrates using a metalorganic chemical vapor deposition (MOCVD) system. It was found that the alloyed Ohmic behavior of the contacts can be attributed to the presence of a large number of nitrogen-vacancy-related defects and not to the formation of lower barriers at the annealed Ti/n-GaN interface. The results show that the large number of interface states, related to nitrogen-vacancy defects led to the pinning of the Fermi level at 0.5 eV below the conduction-band edge and left the GaN surface very heavily n type.
AB - The relationship between the Schottky barrier height and nitrogen-vacancy-related defects in Ti alloyed Ohmic contacts to n-type GaN (n-GaN) was analyzed. The n-GaN epitaxial layers were grown on c-plane sapphire substrates using a metalorganic chemical vapor deposition (MOCVD) system. It was found that the alloyed Ohmic behavior of the contacts can be attributed to the presence of a large number of nitrogen-vacancy-related defects and not to the formation of lower barriers at the annealed Ti/n-GaN interface. The results show that the large number of interface states, related to nitrogen-vacancy defects led to the pinning of the Fermi level at 0.5 eV below the conduction-band edge and left the GaN surface very heavily n type.
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U2 - 10.1063/1.1633658
DO - 10.1063/1.1633658
M3 - Article
VL - 95
SP - 571
EP - 575
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 2
ER -