Schottky barrier height and nitrogen-vacancy-related defects in Ti alloyed Ohmic contacts to n-GaN

Yow Jon Lin, Yao Ming Chen, Tzyy Jon Cheng, Quantum Ker

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39 Citations (Scopus)

Abstract

The relationship between the Schottky barrier height and nitrogen-vacancy-related defects in Ti alloyed Ohmic contacts to n-type GaN (n-GaN) was analyzed. The n-GaN epitaxial layers were grown on c-plane sapphire substrates using a metalorganic chemical vapor deposition (MOCVD) system. It was found that the alloyed Ohmic behavior of the contacts can be attributed to the presence of a large number of nitrogen-vacancy-related defects and not to the formation of lower barriers at the annealed Ti/n-GaN interface. The results show that the large number of interface states, related to nitrogen-vacancy defects led to the pinning of the Fermi level at 0.5 eV below the conduction-band edge and left the GaN surface very heavily n type.

Original languageEnglish
Pages (from-to)571-575
Number of pages5
JournalJournal of Applied Physics
Volume95
Issue number2
DOIs
Publication statusPublished - 2004 Jan 15

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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