Schottky barrier height and nitrogen-vacancy-related defects in Ti alloyed Ohmic contacts to n-GaN

Yow Jon Lin, Yao Ming Chen, Tzyy Jon Cheng, Quantum Ker

Research output: Contribution to journalArticle

39 Citations (Scopus)

Abstract

The relationship between the Schottky barrier height and nitrogen-vacancy-related defects in Ti alloyed Ohmic contacts to n-type GaN (n-GaN) was analyzed. The n-GaN epitaxial layers were grown on c-plane sapphire substrates using a metalorganic chemical vapor deposition (MOCVD) system. It was found that the alloyed Ohmic behavior of the contacts can be attributed to the presence of a large number of nitrogen-vacancy-related defects and not to the formation of lower barriers at the annealed Ti/n-GaN interface. The results show that the large number of interface states, related to nitrogen-vacancy defects led to the pinning of the Fermi level at 0.5 eV below the conduction-band edge and left the GaN surface very heavily n type.

Original languageEnglish
Pages (from-to)571-575
Number of pages5
JournalJournal of Applied Physics
Volume95
Issue number2
DOIs
Publication statusPublished - 2004 Jan 15

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electric contacts
nitrogen
defects
metalorganic chemical vapor deposition
conduction bands
sapphire

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Lin, Yow Jon ; Chen, Yao Ming ; Cheng, Tzyy Jon ; Ker, Quantum. / Schottky barrier height and nitrogen-vacancy-related defects in Ti alloyed Ohmic contacts to n-GaN. In: Journal of Applied Physics. 2004 ; Vol. 95, No. 2. pp. 571-575.
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Schottky barrier height and nitrogen-vacancy-related defects in Ti alloyed Ohmic contacts to n-GaN. / Lin, Yow Jon; Chen, Yao Ming; Cheng, Tzyy Jon; Ker, Quantum.

In: Journal of Applied Physics, Vol. 95, No. 2, 15.01.2004, p. 571-575.

Research output: Contribution to journalArticle

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AB - The relationship between the Schottky barrier height and nitrogen-vacancy-related defects in Ti alloyed Ohmic contacts to n-type GaN (n-GaN) was analyzed. The n-GaN epitaxial layers were grown on c-plane sapphire substrates using a metalorganic chemical vapor deposition (MOCVD) system. It was found that the alloyed Ohmic behavior of the contacts can be attributed to the presence of a large number of nitrogen-vacancy-related defects and not to the formation of lower barriers at the annealed Ti/n-GaN interface. The results show that the large number of interface states, related to nitrogen-vacancy defects led to the pinning of the Fermi level at 0.5 eV below the conduction-band edge and left the GaN surface very heavily n type.

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