Abstract
The relationship between the Schottky barrier height and nitrogen-vacancy-related defects in Ti alloyed Ohmic contacts to n-type GaN (n-GaN) was analyzed. The n-GaN epitaxial layers were grown on c-plane sapphire substrates using a metalorganic chemical vapor deposition (MOCVD) system. It was found that the alloyed Ohmic behavior of the contacts can be attributed to the presence of a large number of nitrogen-vacancy-related defects and not to the formation of lower barriers at the annealed Ti/n-GaN interface. The results show that the large number of interface states, related to nitrogen-vacancy defects led to the pinning of the Fermi level at 0.5 eV below the conduction-band edge and left the GaN surface very heavily n type.
Original language | English |
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Pages (from-to) | 571-575 |
Number of pages | 5 |
Journal | Journal of Applied Physics |
Volume | 95 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2004 Jan 15 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)