Room temperature polarized photoreflectance and photoluminescence characterization of AlGaAs/InGaAs/GaAs high electron mobility transistor structures

T. H. Chen, Y. S. Huang, T. S. Shou, K. K. Tiong, D. Y. Lin, F. H. Pollak, M. S. Goorsky, D. C. Streit, M. Wojtowicz

Research output: Contribution to journalArticle

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Abstract

We have characterized the properties of three AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with two different well widths fabricated by molecular beam epitaxy on (001) GaAs substrates with different threading dislocation densities using room temperature photoreflectance (PR) and photoluminescence (PL). The samples were denoted as A, B and C with well widths of 140, 160 and 160 angstroms, respectively. Samples A and B were grown on substrates with lower threading dislocation densities. For samples B and C, the well width exceeds the pseudomorphic limit so that there is some strain relaxation and related misfit dislocations, as determined from X-ray measurements. In order to detect the anisotropic strain of the misfit dislocations related to strain relaxation, the PR measurements were performed for incident light polarized along [110] and [11̄0] directions. Evidence for the influence of the strain relaxation upon the relaxed channel was provided by the observed anisotropy of the polarized PR features and reduction of the intensity of PL signals in the InGaAs channel layer. The lowest lying intersubband transition has been confirmed by a comparison of the PR and PL spectra. Signals have been observed from every region of the sample making it possible to evaluate the In and Al compositions, channel width and two-dimensional electron gas density as well as the properties of the GaAs/AlGaAs multiple quantum well buffer layer.

Original languageEnglish
Pages (from-to)297-305
Number of pages9
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume8
Issue number4
DOIs
Publication statusPublished - 2000 Dec

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Strain relaxation
High electron mobility transistors
high electron mobility transistors
aluminum gallium arsenides
Photoluminescence
Dislocations (crystals)
photoluminescence
room temperature
Density of gases
Two dimensional electron gas
Substrates
Light polarization
Buffer layers
Molecular beam epitaxy
Temperature
Semiconductor quantum wells
Anisotropy
gas density
polarized light
electron gas

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this

Chen, T. H. ; Huang, Y. S. ; Shou, T. S. ; Tiong, K. K. ; Lin, D. Y. ; Pollak, F. H. ; Goorsky, M. S. ; Streit, D. C. ; Wojtowicz, M. / Room temperature polarized photoreflectance and photoluminescence characterization of AlGaAs/InGaAs/GaAs high electron mobility transistor structures. In: Physica E: Low-Dimensional Systems and Nanostructures. 2000 ; Vol. 8, No. 4. pp. 297-305.
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abstract = "We have characterized the properties of three AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with two different well widths fabricated by molecular beam epitaxy on (001) GaAs substrates with different threading dislocation densities using room temperature photoreflectance (PR) and photoluminescence (PL). The samples were denoted as A, B and C with well widths of 140, 160 and 160 angstroms, respectively. Samples A and B were grown on substrates with lower threading dislocation densities. For samples B and C, the well width exceeds the pseudomorphic limit so that there is some strain relaxation and related misfit dislocations, as determined from X-ray measurements. In order to detect the anisotropic strain of the misfit dislocations related to strain relaxation, the PR measurements were performed for incident light polarized along [110] and [11̄0] directions. Evidence for the influence of the strain relaxation upon the relaxed channel was provided by the observed anisotropy of the polarized PR features and reduction of the intensity of PL signals in the InGaAs channel layer. The lowest lying intersubband transition has been confirmed by a comparison of the PR and PL spectra. Signals have been observed from every region of the sample making it possible to evaluate the In and Al compositions, channel width and two-dimensional electron gas density as well as the properties of the GaAs/AlGaAs multiple quantum well buffer layer.",
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Room temperature polarized photoreflectance and photoluminescence characterization of AlGaAs/InGaAs/GaAs high electron mobility transistor structures. / Chen, T. H.; Huang, Y. S.; Shou, T. S.; Tiong, K. K.; Lin, D. Y.; Pollak, F. H.; Goorsky, M. S.; Streit, D. C.; Wojtowicz, M.

In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 8, No. 4, 12.2000, p. 297-305.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Room temperature polarized photoreflectance and photoluminescence characterization of AlGaAs/InGaAs/GaAs high electron mobility transistor structures

AU - Chen, T. H.

AU - Huang, Y. S.

AU - Shou, T. S.

AU - Tiong, K. K.

AU - Lin, D. Y.

AU - Pollak, F. H.

AU - Goorsky, M. S.

AU - Streit, D. C.

AU - Wojtowicz, M.

PY - 2000/12

Y1 - 2000/12

N2 - We have characterized the properties of three AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with two different well widths fabricated by molecular beam epitaxy on (001) GaAs substrates with different threading dislocation densities using room temperature photoreflectance (PR) and photoluminescence (PL). The samples were denoted as A, B and C with well widths of 140, 160 and 160 angstroms, respectively. Samples A and B were grown on substrates with lower threading dislocation densities. For samples B and C, the well width exceeds the pseudomorphic limit so that there is some strain relaxation and related misfit dislocations, as determined from X-ray measurements. In order to detect the anisotropic strain of the misfit dislocations related to strain relaxation, the PR measurements were performed for incident light polarized along [110] and [11̄0] directions. Evidence for the influence of the strain relaxation upon the relaxed channel was provided by the observed anisotropy of the polarized PR features and reduction of the intensity of PL signals in the InGaAs channel layer. The lowest lying intersubband transition has been confirmed by a comparison of the PR and PL spectra. Signals have been observed from every region of the sample making it possible to evaluate the In and Al compositions, channel width and two-dimensional electron gas density as well as the properties of the GaAs/AlGaAs multiple quantum well buffer layer.

AB - We have characterized the properties of three AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with two different well widths fabricated by molecular beam epitaxy on (001) GaAs substrates with different threading dislocation densities using room temperature photoreflectance (PR) and photoluminescence (PL). The samples were denoted as A, B and C with well widths of 140, 160 and 160 angstroms, respectively. Samples A and B were grown on substrates with lower threading dislocation densities. For samples B and C, the well width exceeds the pseudomorphic limit so that there is some strain relaxation and related misfit dislocations, as determined from X-ray measurements. In order to detect the anisotropic strain of the misfit dislocations related to strain relaxation, the PR measurements were performed for incident light polarized along [110] and [11̄0] directions. Evidence for the influence of the strain relaxation upon the relaxed channel was provided by the observed anisotropy of the polarized PR features and reduction of the intensity of PL signals in the InGaAs channel layer. The lowest lying intersubband transition has been confirmed by a comparison of the PR and PL spectra. Signals have been observed from every region of the sample making it possible to evaluate the In and Al compositions, channel width and two-dimensional electron gas density as well as the properties of the GaAs/AlGaAs multiple quantum well buffer layer.

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