Abstract
We have studied the effects of the two-dimensional electron gas (2DEG) and indium surface segregation in four pseudomorphic AlGaAs/InGaAs/GaAs high electron mobility transistor structures using room-temperature phototransmittance (PT) and photoluminescence (PL) measurements. The PT spectra from the InGaAs modulation-doped quantum well channel can be accounted for by a lineshape function which is the first-derivative of a step-like two-dimensional density of states and a Fermi level filling factor. A detailed lineshape fit makes it possible to evaluate the Fermi energy, and hence the concentration of 2DEG in addition to the energies of the intersubband transitions. The lowest-lying intersubband transition has been confirmed by a comparison of the PT and PL spectra. From the difference of intersubband transition energies, the surface segregation effects of indium atoms are demonstrated.
| Original language | English |
|---|---|
| Pages (from-to) | 103-109 |
| Number of pages | 7 |
| Journal | Semiconductor Science and Technology |
| Volume | 14 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 1999 Dec 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
Cite this
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Room-temperature phototransmittance and photoluminescence characterization of the AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with varied quantum well compositional profiles. / Lin, Der-Yuh; Huang, Y. S.; Tiong, K. K.; Pollak, F. H.; Evans, K. R.
In: Semiconductor Science and Technology, Vol. 14, No. 1, 01.12.1999, p. 103-109.Research output: Contribution to journal › Article
TY - JOUR
T1 - Room-temperature phototransmittance and photoluminescence characterization of the AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with varied quantum well compositional profiles
AU - Lin, Der-Yuh
AU - Huang, Y. S.
AU - Tiong, K. K.
AU - Pollak, F. H.
AU - Evans, K. R.
PY - 1999/12/1
Y1 - 1999/12/1
N2 - We have studied the effects of the two-dimensional electron gas (2DEG) and indium surface segregation in four pseudomorphic AlGaAs/InGaAs/GaAs high electron mobility transistor structures using room-temperature phototransmittance (PT) and photoluminescence (PL) measurements. The PT spectra from the InGaAs modulation-doped quantum well channel can be accounted for by a lineshape function which is the first-derivative of a step-like two-dimensional density of states and a Fermi level filling factor. A detailed lineshape fit makes it possible to evaluate the Fermi energy, and hence the concentration of 2DEG in addition to the energies of the intersubband transitions. The lowest-lying intersubband transition has been confirmed by a comparison of the PT and PL spectra. From the difference of intersubband transition energies, the surface segregation effects of indium atoms are demonstrated.
AB - We have studied the effects of the two-dimensional electron gas (2DEG) and indium surface segregation in four pseudomorphic AlGaAs/InGaAs/GaAs high electron mobility transistor structures using room-temperature phototransmittance (PT) and photoluminescence (PL) measurements. The PT spectra from the InGaAs modulation-doped quantum well channel can be accounted for by a lineshape function which is the first-derivative of a step-like two-dimensional density of states and a Fermi level filling factor. A detailed lineshape fit makes it possible to evaluate the Fermi energy, and hence the concentration of 2DEG in addition to the energies of the intersubband transitions. The lowest-lying intersubband transition has been confirmed by a comparison of the PT and PL spectra. From the difference of intersubband transition energies, the surface segregation effects of indium atoms are demonstrated.
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U2 - 10.1088/0268-1242/14/1/017
DO - 10.1088/0268-1242/14/1/017
M3 - Article
VL - 14
SP - 103
EP - 109
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 1
ER -