Room-temperature phototransmittance and photoluminescence characterization of the AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with varied quantum well compositional profiles

D. Y. Lin; Y. S. Huang; K. K. Tiong; F. H. Pollak; K. R. Evans

doi:10.1088/0268-1242/14/1/017

Room-temperature phototransmittance and photoluminescence characterization of the AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with varied quantum well compositional profiles

D. Y. Lin, Y. S. Huang, K. K. Tiong, F. H. Pollak, K. R. Evans

Department of Electronic Engineering

Research output: Contribution to journal › Article

6 Citations (Scopus)

Abstract

We have studied the effects of the two-dimensional electron gas (2DEG) and indium surface segregation in four pseudomorphic AlGaAs/InGaAs/GaAs high electron mobility transistor structures using room-temperature phototransmittance (PT) and photoluminescence (PL) measurements. The PT spectra from the InGaAs modulation-doped quantum well channel can be accounted for by a lineshape function which is the first-derivative of a step-like two-dimensional density of states and a Fermi level filling factor. A detailed lineshape fit makes it possible to evaluate the Fermi energy, and hence the concentration of 2DEG in addition to the energies of the intersubband transitions. The lowest-lying intersubband transition has been confirmed by a comparison of the PT and PL spectra. From the difference of intersubband transition energies, the surface segregation effects of indium atoms are demonstrated.

Original language	English
Pages (from-to)	103-109
Number of pages	7
Journal	Semiconductor Science and Technology
Volume	14
Issue number	1
DOIs	https://doi.org/10.1088/0268-1242/14/1/017
Publication status	Published - 1999 Dec 1

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All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

Lin, D. Y., Huang, Y. S., Tiong, K. K., Pollak, F. H., & Evans, K. R. (1999). Room-temperature phototransmittance and photoluminescence characterization of the AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with varied quantum well compositional profiles. Semiconductor Science and Technology, 14(1), 103-109. https://doi.org/10.1088/0268-1242/14/1/017

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title = "Room-temperature phototransmittance and photoluminescence characterization of the AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with varied quantum well compositional profiles",

abstract = "We have studied the effects of the two-dimensional electron gas (2DEG) and indium surface segregation in four pseudomorphic AlGaAs/InGaAs/GaAs high electron mobility transistor structures using room-temperature phototransmittance (PT) and photoluminescence (PL) measurements. The PT spectra from the InGaAs modulation-doped quantum well channel can be accounted for by a lineshape function which is the first-derivative of a step-like two-dimensional density of states and a Fermi level filling factor. A detailed lineshape fit makes it possible to evaluate the Fermi energy, and hence the concentration of 2DEG in addition to the energies of the intersubband transitions. The lowest-lying intersubband transition has been confirmed by a comparison of the PT and PL spectra. From the difference of intersubband transition energies, the surface segregation effects of indium atoms are demonstrated.",

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Lin, DY, Huang, YS, Tiong, KK, Pollak, FH & Evans, KR 1999, 'Room-temperature phototransmittance and photoluminescence characterization of the AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with varied quantum well compositional profiles', Semiconductor Science and Technology, vol. 14, no. 1, pp. 103-109. https://doi.org/10.1088/0268-1242/14/1/017

Room-temperature phototransmittance and photoluminescence characterization of the AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with varied quantum well compositional profiles. / Lin, D. Y.; Huang, Y. S.; Tiong, K. K.; Pollak, F. H.; Evans, K. R.

In: Semiconductor Science and Technology, Vol. 14, No. 1, 01.12.1999, p. 103-109.

Research output: Contribution to journal › Article

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AU - Lin, D. Y.

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AU - Evans, K. R.

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N2 - We have studied the effects of the two-dimensional electron gas (2DEG) and indium surface segregation in four pseudomorphic AlGaAs/InGaAs/GaAs high electron mobility transistor structures using room-temperature phototransmittance (PT) and photoluminescence (PL) measurements. The PT spectra from the InGaAs modulation-doped quantum well channel can be accounted for by a lineshape function which is the first-derivative of a step-like two-dimensional density of states and a Fermi level filling factor. A detailed lineshape fit makes it possible to evaluate the Fermi energy, and hence the concentration of 2DEG in addition to the energies of the intersubband transitions. The lowest-lying intersubband transition has been confirmed by a comparison of the PT and PL spectra. From the difference of intersubband transition energies, the surface segregation effects of indium atoms are demonstrated.

AB - We have studied the effects of the two-dimensional electron gas (2DEG) and indium surface segregation in four pseudomorphic AlGaAs/InGaAs/GaAs high electron mobility transistor structures using room-temperature phototransmittance (PT) and photoluminescence (PL) measurements. The PT spectra from the InGaAs modulation-doped quantum well channel can be accounted for by a lineshape function which is the first-derivative of a step-like two-dimensional density of states and a Fermi level filling factor. A detailed lineshape fit makes it possible to evaluate the Fermi energy, and hence the concentration of 2DEG in addition to the energies of the intersubband transitions. The lowest-lying intersubband transition has been confirmed by a comparison of the PT and PL spectra. From the difference of intersubband transition energies, the surface segregation effects of indium atoms are demonstrated.

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10.1088/0268-1242/14/1/017