Room-temperature phototransmittance and photoluminescence characterization of the AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with varied quantum well compositional profiles

D. Y. Lin, Y. S. Huang, K. K. Tiong, F. H. Pollak, K. R. Evans

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6 Citations (Scopus)

Abstract

We have studied the effects of the two-dimensional electron gas (2DEG) and indium surface segregation in four pseudomorphic AlGaAs/InGaAs/GaAs high electron mobility transistor structures using room-temperature phototransmittance (PT) and photoluminescence (PL) measurements. The PT spectra from the InGaAs modulation-doped quantum well channel can be accounted for by a lineshape function which is the first-derivative of a step-like two-dimensional density of states and a Fermi level filling factor. A detailed lineshape fit makes it possible to evaluate the Fermi energy, and hence the concentration of 2DEG in addition to the energies of the intersubband transitions. The lowest-lying intersubband transition has been confirmed by a comparison of the PT and PL spectra. From the difference of intersubband transition energies, the surface segregation effects of indium atoms are demonstrated.

Original languageEnglish
Pages (from-to)103-109
Number of pages7
JournalSemiconductor Science and Technology
Volume14
Issue number1
DOIs
Publication statusPublished - 1999 Dec 1

Fingerprint

Two dimensional electron gas
High electron mobility transistors
high electron mobility transistors
Semiconductor quantum wells
aluminum gallium arsenides
Surface segregation
Photoluminescence
Indium
quantum wells
Fermi level
photoluminescence
indium
room temperature
profiles
Temperature
electron gas
energy
Modulation
Derivatives
modulation

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

@article{50ea25ae7cd841528869628b8044a68c,
title = "Room-temperature phototransmittance and photoluminescence characterization of the AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with varied quantum well compositional profiles",
abstract = "We have studied the effects of the two-dimensional electron gas (2DEG) and indium surface segregation in four pseudomorphic AlGaAs/InGaAs/GaAs high electron mobility transistor structures using room-temperature phototransmittance (PT) and photoluminescence (PL) measurements. The PT spectra from the InGaAs modulation-doped quantum well channel can be accounted for by a lineshape function which is the first-derivative of a step-like two-dimensional density of states and a Fermi level filling factor. A detailed lineshape fit makes it possible to evaluate the Fermi energy, and hence the concentration of 2DEG in addition to the energies of the intersubband transitions. The lowest-lying intersubband transition has been confirmed by a comparison of the PT and PL spectra. From the difference of intersubband transition energies, the surface segregation effects of indium atoms are demonstrated.",
author = "Lin, {D. Y.} and Huang, {Y. S.} and Tiong, {K. K.} and Pollak, {F. H.} and Evans, {K. R.}",
year = "1999",
month = "12",
day = "1",
doi = "10.1088/0268-1242/14/1/017",
language = "English",
volume = "14",
pages = "103--109",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "IOP Publishing Ltd.",
number = "1",

}

TY - JOUR

T1 - Room-temperature phototransmittance and photoluminescence characterization of the AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with varied quantum well compositional profiles

AU - Lin, D. Y.

AU - Huang, Y. S.

AU - Tiong, K. K.

AU - Pollak, F. H.

AU - Evans, K. R.

PY - 1999/12/1

Y1 - 1999/12/1

N2 - We have studied the effects of the two-dimensional electron gas (2DEG) and indium surface segregation in four pseudomorphic AlGaAs/InGaAs/GaAs high electron mobility transistor structures using room-temperature phototransmittance (PT) and photoluminescence (PL) measurements. The PT spectra from the InGaAs modulation-doped quantum well channel can be accounted for by a lineshape function which is the first-derivative of a step-like two-dimensional density of states and a Fermi level filling factor. A detailed lineshape fit makes it possible to evaluate the Fermi energy, and hence the concentration of 2DEG in addition to the energies of the intersubband transitions. The lowest-lying intersubband transition has been confirmed by a comparison of the PT and PL spectra. From the difference of intersubband transition energies, the surface segregation effects of indium atoms are demonstrated.

AB - We have studied the effects of the two-dimensional electron gas (2DEG) and indium surface segregation in four pseudomorphic AlGaAs/InGaAs/GaAs high electron mobility transistor structures using room-temperature phototransmittance (PT) and photoluminescence (PL) measurements. The PT spectra from the InGaAs modulation-doped quantum well channel can be accounted for by a lineshape function which is the first-derivative of a step-like two-dimensional density of states and a Fermi level filling factor. A detailed lineshape fit makes it possible to evaluate the Fermi energy, and hence the concentration of 2DEG in addition to the energies of the intersubband transitions. The lowest-lying intersubband transition has been confirmed by a comparison of the PT and PL spectra. From the difference of intersubband transition energies, the surface segregation effects of indium atoms are demonstrated.

UR - http://www.scopus.com/inward/record.url?scp=0032712481&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032712481&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/14/1/017

DO - 10.1088/0268-1242/14/1/017

M3 - Article

AN - SCOPUS:0032712481

VL - 14

SP - 103

EP - 109

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 1

ER -