Room-temperature photoreflectance and photoluminescence characterization of the AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with varied quantum well compositional profiles

D. Y. Lin, S. H. Liang, Y. S. Huang, K. K. Tiong, Fred H. Pollak, K. R. Evans

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

Using room-temperature photoreflectance (PR) and photoluminescence (PL) we have characterized four pseudomorphic AlGaAs/InGaAs/GaAs high electron mobility transistor structures with varied quantum well compositional profiles. Several features from the InGaAs modulation doped quantum well portion of the samples have been observed in addition to signals from the AlGaAs, GaAs, and GaAs/AlGaAs superlattice (SL) buffer layer. The PR spectra from the InGaAs quantum well channel can be accounted for by a line shape function which is the first derivative of a step-like two-dimensional density of states and a Fermi level filling factor. A detailed line shape fit makes it possible to evaluate the Fermi energy, and hence the concentration of two-dimensional electron gas in addition to the energies of the intersubband transitions. The lowest lying intersubband transition has been confirmed by a comparison of the PR and PL spectra. From the difference of intersubband transition energies, the surface segregation effects of indium atoms are demonstrated. In addition, other important parameters of the system such as built-in electric field, Al composition, as well as the properties of the GaAs/AlGaAs SL buffer layer are evaluated.

Original languageEnglish
Pages (from-to)8235-8241
Number of pages7
JournalJournal of Applied Physics
Volume85
Issue number12
DOIs
Publication statusPublished - 1999 Jun 15

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high electron mobility transistors
aluminum gallium arsenides
quantum wells
photoluminescence
room temperature
profiles
line shape
buffers
shape functions
indium
electron gas
energy
modulation
electric fields
atoms

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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title = "Room-temperature photoreflectance and photoluminescence characterization of the AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with varied quantum well compositional profiles",
abstract = "Using room-temperature photoreflectance (PR) and photoluminescence (PL) we have characterized four pseudomorphic AlGaAs/InGaAs/GaAs high electron mobility transistor structures with varied quantum well compositional profiles. Several features from the InGaAs modulation doped quantum well portion of the samples have been observed in addition to signals from the AlGaAs, GaAs, and GaAs/AlGaAs superlattice (SL) buffer layer. The PR spectra from the InGaAs quantum well channel can be accounted for by a line shape function which is the first derivative of a step-like two-dimensional density of states and a Fermi level filling factor. A detailed line shape fit makes it possible to evaluate the Fermi energy, and hence the concentration of two-dimensional electron gas in addition to the energies of the intersubband transitions. The lowest lying intersubband transition has been confirmed by a comparison of the PR and PL spectra. From the difference of intersubband transition energies, the surface segregation effects of indium atoms are demonstrated. In addition, other important parameters of the system such as built-in electric field, Al composition, as well as the properties of the GaAs/AlGaAs SL buffer layer are evaluated.",
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Room-temperature photoreflectance and photoluminescence characterization of the AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with varied quantum well compositional profiles. / Lin, D. Y.; Liang, S. H.; Huang, Y. S.; Tiong, K. K.; Pollak, Fred H.; Evans, K. R.

In: Journal of Applied Physics, Vol. 85, No. 12, 15.06.1999, p. 8235-8241.

Research output: Contribution to journalArticle

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AU - Liang, S. H.

AU - Huang, Y. S.

AU - Tiong, K. K.

AU - Pollak, Fred H.

AU - Evans, K. R.

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N2 - Using room-temperature photoreflectance (PR) and photoluminescence (PL) we have characterized four pseudomorphic AlGaAs/InGaAs/GaAs high electron mobility transistor structures with varied quantum well compositional profiles. Several features from the InGaAs modulation doped quantum well portion of the samples have been observed in addition to signals from the AlGaAs, GaAs, and GaAs/AlGaAs superlattice (SL) buffer layer. The PR spectra from the InGaAs quantum well channel can be accounted for by a line shape function which is the first derivative of a step-like two-dimensional density of states and a Fermi level filling factor. A detailed line shape fit makes it possible to evaluate the Fermi energy, and hence the concentration of two-dimensional electron gas in addition to the energies of the intersubband transitions. The lowest lying intersubband transition has been confirmed by a comparison of the PR and PL spectra. From the difference of intersubband transition energies, the surface segregation effects of indium atoms are demonstrated. In addition, other important parameters of the system such as built-in electric field, Al composition, as well as the properties of the GaAs/AlGaAs SL buffer layer are evaluated.

AB - Using room-temperature photoreflectance (PR) and photoluminescence (PL) we have characterized four pseudomorphic AlGaAs/InGaAs/GaAs high electron mobility transistor structures with varied quantum well compositional profiles. Several features from the InGaAs modulation doped quantum well portion of the samples have been observed in addition to signals from the AlGaAs, GaAs, and GaAs/AlGaAs superlattice (SL) buffer layer. The PR spectra from the InGaAs quantum well channel can be accounted for by a line shape function which is the first derivative of a step-like two-dimensional density of states and a Fermi level filling factor. A detailed line shape fit makes it possible to evaluate the Fermi energy, and hence the concentration of two-dimensional electron gas in addition to the energies of the intersubband transitions. The lowest lying intersubband transition has been confirmed by a comparison of the PR and PL spectra. From the difference of intersubband transition energies, the surface segregation effects of indium atoms are demonstrated. In addition, other important parameters of the system such as built-in electric field, Al composition, as well as the properties of the GaAs/AlGaAs SL buffer layer are evaluated.

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