Abstract
Using room-temperature photoreflectance (PR) and photoluminescence (PL) we have characterized four pseudomorphic AlGaAs/InGaAs/GaAs high electron mobility transistor structures with varied quantum well compositional profiles. Several features from the InGaAs modulation doped quantum well portion of the samples have been observed in addition to signals from the AlGaAs, GaAs, and GaAs/AlGaAs superlattice (SL) buffer layer. The PR spectra from the InGaAs quantum well channel can be accounted for by a line shape function which is the first derivative of a step-like two-dimensional density of states and a Fermi level filling factor. A detailed line shape fit makes it possible to evaluate the Fermi energy, and hence the concentration of two-dimensional electron gas in addition to the energies of the intersubband transitions. The lowest lying intersubband transition has been confirmed by a comparison of the PR and PL spectra. From the difference of intersubband transition energies, the surface segregation effects of indium atoms are demonstrated. In addition, other important parameters of the system such as built-in electric field, Al composition, as well as the properties of the GaAs/AlGaAs SL buffer layer are evaluated.
| Original language | English |
|---|---|
| Pages (from-to) | 8235-8241 |
| Number of pages | 7 |
| Journal | Journal of Applied Physics |
| Volume | 85 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 1999 Jun 15 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
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Room-temperature photoreflectance and photoluminescence characterization of the AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with varied quantum well compositional profiles. / Lin, D. Y.; Liang, S. H.; Huang, Y. S.; Tiong, K. K.; Pollak, Fred H.; Evans, K. R.
In: Journal of Applied Physics, Vol. 85, No. 12, 15.06.1999, p. 8235-8241.Research output: Contribution to journal › Article
TY - JOUR
T1 - Room-temperature photoreflectance and photoluminescence characterization of the AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with varied quantum well compositional profiles
AU - Lin, D. Y.
AU - Liang, S. H.
AU - Huang, Y. S.
AU - Tiong, K. K.
AU - Pollak, Fred H.
AU - Evans, K. R.
PY - 1999/6/15
Y1 - 1999/6/15
N2 - Using room-temperature photoreflectance (PR) and photoluminescence (PL) we have characterized four pseudomorphic AlGaAs/InGaAs/GaAs high electron mobility transistor structures with varied quantum well compositional profiles. Several features from the InGaAs modulation doped quantum well portion of the samples have been observed in addition to signals from the AlGaAs, GaAs, and GaAs/AlGaAs superlattice (SL) buffer layer. The PR spectra from the InGaAs quantum well channel can be accounted for by a line shape function which is the first derivative of a step-like two-dimensional density of states and a Fermi level filling factor. A detailed line shape fit makes it possible to evaluate the Fermi energy, and hence the concentration of two-dimensional electron gas in addition to the energies of the intersubband transitions. The lowest lying intersubband transition has been confirmed by a comparison of the PR and PL spectra. From the difference of intersubband transition energies, the surface segregation effects of indium atoms are demonstrated. In addition, other important parameters of the system such as built-in electric field, Al composition, as well as the properties of the GaAs/AlGaAs SL buffer layer are evaluated.
AB - Using room-temperature photoreflectance (PR) and photoluminescence (PL) we have characterized four pseudomorphic AlGaAs/InGaAs/GaAs high electron mobility transistor structures with varied quantum well compositional profiles. Several features from the InGaAs modulation doped quantum well portion of the samples have been observed in addition to signals from the AlGaAs, GaAs, and GaAs/AlGaAs superlattice (SL) buffer layer. The PR spectra from the InGaAs quantum well channel can be accounted for by a line shape function which is the first derivative of a step-like two-dimensional density of states and a Fermi level filling factor. A detailed line shape fit makes it possible to evaluate the Fermi energy, and hence the concentration of two-dimensional electron gas in addition to the energies of the intersubband transitions. The lowest lying intersubband transition has been confirmed by a comparison of the PR and PL spectra. From the difference of intersubband transition energies, the surface segregation effects of indium atoms are demonstrated. In addition, other important parameters of the system such as built-in electric field, Al composition, as well as the properties of the GaAs/AlGaAs SL buffer layer are evaluated.
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U2 - 10.1063/1.370664
DO - 10.1063/1.370664
M3 - Article
AN - SCOPUS:0032615119
VL - 85
SP - 8235
EP - 8241
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 12
ER -