Role of Mo:Na layer on the formation of MoSe2 phase in Cu(In,Ga)Se2 thin film solar cells

Yi-Cheng or Y. C. Lin, Ding Hao Hong, Yin Ting Hsieh, Li Ching Wang, Hung Ru Hsu

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

This study investigated the influence of Mo:Na on the formation of MoSe2 in Cu(In, Ga)Se2 (CIGS) thin film solar cells and its overall effect on the performance of cells with a structure of Ti/Mo:Na/Mo/CIGS/CdS/i-ZnO/ZnOAl/Al. Varying the thickness of the Mo:Na layer enabled the systematic control of the diffusion of Na into the CIGS layer. Experimental results demonstrate that the thickness of MoSe2 phase decreases with an increase in the thickness of the Mo:Na layer. Reducing the thickness of the MoSe2 layer enhanced cell efficiency. Additionally, Ga distribution in the CIGS layer may vary with a change in the thickness of the Mo:Na layer. When Mo:Na/Mo=500/500 nm, the Ga content and the thickness of the MoSe2 layer were close to optimal with regard to cell performance. This paper proposes a model to explain the impact of Na doping on the formation of MoSe2 phase formation in polycrystalline CIGS. It appears that the addition of Na leads to the formation of Na2Sex at the grain boundaries in the absorber layer, which reduces the diffusion of Se to form MoSe2.

Original languageEnglish
Pages (from-to)226-233
Number of pages8
JournalSolar Energy Materials and Solar Cells
Volume155
DOIs
Publication statusPublished - 2016 Oct 1

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films

Cite this