RETRACTED: Current Conduction Mechanisms through Au/SnO/n-type Si/In Devices (RETRACTED: Current conduction mechanisms through Au/SnO/n-type Si/In devices (2016) 611 (1–5)(S0040609016301432)(10.1016/j.tsf.2016.05.002))

Hou Yen Tsao, Yu-Wu Wang

Research output: Contribution to journalComment/debate

Abstract

Available online Date This article has been retracted: please see Elsevier Policy on Article Withdrawal (https://www.elsevier.com/about/our-business/policies/article-withdrawal). This article has been retracted at the request of the Editor-in-Chief. This article has been retracted at the request of the authors. Incorrect data was used in Figure 6 and 8. The data of Fig. 8 disclose the evidence of silicon elements diffusion at the interface that would affect the inference of whole paper. The authors apologize for any inconvenience caused.

Original languageEnglish
Number of pages1
JournalThin Solid Films
Volume665
DOIs
Publication statusPublished - 2018 Nov 1

Fingerprint

Silicon
conduction
inference
Industry
silicon

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

@article{84872da49f0f4ecd8e83b1fec0db8fb5,
title = "RETRACTED: Current Conduction Mechanisms through Au/SnO/n-type Si/In Devices (RETRACTED: Current conduction mechanisms through Au/SnO/n-type Si/In devices (2016) 611 (1–5)(S0040609016301432)(10.1016/j.tsf.2016.05.002))",
abstract = "Available online Date This article has been retracted: please see Elsevier Policy on Article Withdrawal (https://www.elsevier.com/about/our-business/policies/article-withdrawal). This article has been retracted at the request of the Editor-in-Chief. This article has been retracted at the request of the authors. Incorrect data was used in Figure 6 and 8. The data of Fig. 8 disclose the evidence of silicon elements diffusion at the interface that would affect the inference of whole paper. The authors apologize for any inconvenience caused.",
author = "Tsao, {Hou Yen} and Yu-Wu Wang",
year = "2018",
month = "11",
day = "1",
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language = "English",
volume = "665",
journal = "Thin Solid Films",
issn = "0040-6090",
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T2 - Current Conduction Mechanisms through Au/SnO/n-type Si/In Devices (RETRACTED: Current conduction mechanisms through Au/SnO/n-type Si/In devices (2016) 611 (1–5)(S0040609016301432)(10.1016/j.tsf.2016.05.002))

AU - Tsao, Hou Yen

AU - Wang, Yu-Wu

PY - 2018/11/1

Y1 - 2018/11/1

N2 - Available online Date This article has been retracted: please see Elsevier Policy on Article Withdrawal (https://www.elsevier.com/about/our-business/policies/article-withdrawal). This article has been retracted at the request of the Editor-in-Chief. This article has been retracted at the request of the authors. Incorrect data was used in Figure 6 and 8. The data of Fig. 8 disclose the evidence of silicon elements diffusion at the interface that would affect the inference of whole paper. The authors apologize for any inconvenience caused.

AB - Available online Date This article has been retracted: please see Elsevier Policy on Article Withdrawal (https://www.elsevier.com/about/our-business/policies/article-withdrawal). This article has been retracted at the request of the Editor-in-Chief. This article has been retracted at the request of the authors. Incorrect data was used in Figure 6 and 8. The data of Fig. 8 disclose the evidence of silicon elements diffusion at the interface that would affect the inference of whole paper. The authors apologize for any inconvenience caused.

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VL - 665

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JF - Thin Solid Films

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