Responsivity to solar irradiation and the behavior of carrier transports for MoS2/Si and MoS2/Si nanowires/Si devices

Cheng You Wu, Yow Jon Lin

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The behavior of carrier transports and the responsivity to solar irradiation are studied for MoS2/n-type Si (n-Si) and MoS2/Si nanowires (SiNWs)/n-Si device. The MoS2 thin films were prepared by the sol–gel method. The MoS2/n-Si and MoS2/SiNWs/n-Si devices exhibit reliable rectification behavior. The thermionic emission-diffusion model is the dominant process in these fabricated MoS2/n-Si and MoS2/SiNWs/n-Si devices. By applying the insertion of the SiNWs, the responsivity to solar irradiation can be effectively increased. Because of the low reflectance values for the MoS2/SiNWs/n-Si sample, the increased photocurrent density for the MoS2/SiNWs/n-Si device is due to high external light injection efficiency. MoS2/SiNWs/n-Si devices benefit from the high surface to volume ratio for SiNWs leading to a high responsivity of the device. The photo-response results confirm that the decay in the photocurrent is due to the dominance of short-lifetime electron trapping in the MoS2 thin film.

Original languageEnglish
Pages (from-to)18331-18336
Number of pages6
JournalJournal of Materials Science: Materials in Electronics
Volume28
Issue number24
DOIs
Publication statusPublished - 2017 Dec 1

Fingerprint

Carrier transport
Nanowires
nanowires
Irradiation
irradiation
Photocurrents
photocurrents
Thermionic emission
Thin films
thermionic emission
rectification
thin films
insertion
trapping
injection
reflectance
life (durability)
Electrons
decay

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

@article{a0210654e30d4d64a8ca50dddacace92,
title = "Responsivity to solar irradiation and the behavior of carrier transports for MoS2/Si and MoS2/Si nanowires/Si devices",
abstract = "The behavior of carrier transports and the responsivity to solar irradiation are studied for MoS2/n-type Si (n-Si) and MoS2/Si nanowires (SiNWs)/n-Si device. The MoS2 thin films were prepared by the sol–gel method. The MoS2/n-Si and MoS2/SiNWs/n-Si devices exhibit reliable rectification behavior. The thermionic emission-diffusion model is the dominant process in these fabricated MoS2/n-Si and MoS2/SiNWs/n-Si devices. By applying the insertion of the SiNWs, the responsivity to solar irradiation can be effectively increased. Because of the low reflectance values for the MoS2/SiNWs/n-Si sample, the increased photocurrent density for the MoS2/SiNWs/n-Si device is due to high external light injection efficiency. MoS2/SiNWs/n-Si devices benefit from the high surface to volume ratio for SiNWs leading to a high responsivity of the device. The photo-response results confirm that the decay in the photocurrent is due to the dominance of short-lifetime electron trapping in the MoS2 thin film.",
author = "Wu, {Cheng You} and Lin, {Yow Jon}",
year = "2017",
month = "12",
day = "1",
doi = "10.1007/s10854-017-7779-4",
language = "English",
volume = "28",
pages = "18331--18336",
journal = "Journal of Materials Science: Materials in Electronics",
issn = "0957-4522",
publisher = "Springer New York",
number = "24",

}

TY - JOUR

T1 - Responsivity to solar irradiation and the behavior of carrier transports for MoS2/Si and MoS2/Si nanowires/Si devices

AU - Wu, Cheng You

AU - Lin, Yow Jon

PY - 2017/12/1

Y1 - 2017/12/1

N2 - The behavior of carrier transports and the responsivity to solar irradiation are studied for MoS2/n-type Si (n-Si) and MoS2/Si nanowires (SiNWs)/n-Si device. The MoS2 thin films were prepared by the sol–gel method. The MoS2/n-Si and MoS2/SiNWs/n-Si devices exhibit reliable rectification behavior. The thermionic emission-diffusion model is the dominant process in these fabricated MoS2/n-Si and MoS2/SiNWs/n-Si devices. By applying the insertion of the SiNWs, the responsivity to solar irradiation can be effectively increased. Because of the low reflectance values for the MoS2/SiNWs/n-Si sample, the increased photocurrent density for the MoS2/SiNWs/n-Si device is due to high external light injection efficiency. MoS2/SiNWs/n-Si devices benefit from the high surface to volume ratio for SiNWs leading to a high responsivity of the device. The photo-response results confirm that the decay in the photocurrent is due to the dominance of short-lifetime electron trapping in the MoS2 thin film.

AB - The behavior of carrier transports and the responsivity to solar irradiation are studied for MoS2/n-type Si (n-Si) and MoS2/Si nanowires (SiNWs)/n-Si device. The MoS2 thin films were prepared by the sol–gel method. The MoS2/n-Si and MoS2/SiNWs/n-Si devices exhibit reliable rectification behavior. The thermionic emission-diffusion model is the dominant process in these fabricated MoS2/n-Si and MoS2/SiNWs/n-Si devices. By applying the insertion of the SiNWs, the responsivity to solar irradiation can be effectively increased. Because of the low reflectance values for the MoS2/SiNWs/n-Si sample, the increased photocurrent density for the MoS2/SiNWs/n-Si device is due to high external light injection efficiency. MoS2/SiNWs/n-Si devices benefit from the high surface to volume ratio for SiNWs leading to a high responsivity of the device. The photo-response results confirm that the decay in the photocurrent is due to the dominance of short-lifetime electron trapping in the MoS2 thin film.

UR - http://www.scopus.com/inward/record.url?scp=85028015827&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85028015827&partnerID=8YFLogxK

U2 - 10.1007/s10854-017-7779-4

DO - 10.1007/s10854-017-7779-4

M3 - Article

AN - SCOPUS:85028015827

VL - 28

SP - 18331

EP - 18336

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

SN - 0957-4522

IS - 24

ER -