Abstract
The effect of the incorporation of Ti into ZnO nanoparticles on the responsivity of In/ZnO nanoparticles/In devices to solar irradiation is studied. The dependence of the sensitivity to solar irradiation, response time, grain size, luminescence and defects upon the addition of Ti is determined. The time-resolved photocurrent plot indicates that the rise and decay processes become faster when Ti is incorporated into ZnO nanoparticles. The ratio of photocurrent-to-dark current (i.e., photosensitivity) is about one order of magnitude for In/ZnO nanoparticles/In devices. However, the ratio of photocurrent-to-dark current is three-four orders of magnitude for In/TiZnO nanoparticles/In devices. An oxygen vacancy-related band model is proposed to describe the transition processes for free carrier generation. The incorporation of Ti into ZnO nanoparticles leads to the combined effect of a reduction in the grain size and the reduced number of oxygen vacancies, which serves to reduce the dark current and increase the value of photosensitivity.
| Original language | English |
|---|---|
| Pages (from-to) | 62-67 |
| Number of pages | 6 |
| Journal | Sensors and Actuators, A: Physical |
| Volume | 260 |
| DOIs | |
| Publication status | Published - 2017 Jun 15 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Instrumentation
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Metals and Alloys
- Electrical and Electronic Engineering