Resonant tunneling of electrons from quantized levels in the accumulation layer of double-barrier heterostructures

Jenq-Shinn Wu, C. Y. Chang, C. P. Lee, K. H. Chang, D. G. Liu, D. C. Liou

Research output: Contribution to journal › Article

18 Citations (Scopus)

Abstract

We report the first observation of the resonant tunneling features associated with the quantized levels in the accumulation layer of the double-barrier resonant tunneling structure (DBRTS) with undoped electrodes. This quantum effect causes additional kinks in the current-voltage (I-V) characteristic and an increasingly enhanced oscillation behavior in the differential conductance-voltage (G-V) curve. Three discrete quantum levels have been observed based on the room-temperature G-V curve. Our measurements are made without the presence of magnetic field and thus the experimental results are totally different from the magneto-oscillation.

Original languageEnglish
Pages (from-to)2311-2312
Number of pages2
JournalApplied Physics Letters
Volume57
Issue number22
DOIs
Publication statusPublished - 1990 Dec 1

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resonant tunneling
oscillations
electric potential
curves
electrons
electrodes
causes
room temperature
magnetic fields

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Wu, Jenq-Shinn ; Chang, C. Y. ; Lee, C. P. ; Chang, K. H. ; Liu, D. G. ; Liou, D. C. / Resonant tunneling of electrons from quantized levels in the accumulation layer of double-barrier heterostructures. In: Applied Physics Letters. 1990 ; Vol. 57, No. 22. pp. 2311-2312.
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Wu, J-S, Chang, CY, Lee, CP, Chang, KH, Liu, DG & Liou, DC 1990, 'Resonant tunneling of electrons from quantized levels in the accumulation layer of double-barrier heterostructures', Applied Physics Letters, vol. 57, no. 22, pp. 2311-2312. https://doi.org/10.1063/1.103879

Resonant tunneling of electrons from quantized levels in the accumulation layer of double-barrier heterostructures. / Wu, Jenq-Shinn; Chang, C. Y.; Lee, C. P.; Chang, K. H.; Liu, D. G.; Liou, D. C.

In: Applied Physics Letters, Vol. 57, No. 22, 01.12.1990, p. 2311-2312.

Research output: Contribution to journal › Article

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T1 - Resonant tunneling of electrons from quantized levels in the accumulation layer of double-barrier heterostructures

AU - Wu, Jenq-Shinn

AU - Chang, C. Y.

AU - Lee, C. P.

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AU - Liu, D. G.

AU - Liou, D. C.

PY - 1990/12/1

Y1 - 1990/12/1

N2 - We report the first observation of the resonant tunneling features associated with the quantized levels in the accumulation layer of the double-barrier resonant tunneling structure (DBRTS) with undoped electrodes. This quantum effect causes additional kinks in the current-voltage (I-V) characteristic and an increasingly enhanced oscillation behavior in the differential conductance-voltage (G-V) curve. Three discrete quantum levels have been observed based on the room-temperature G-V curve. Our measurements are made without the presence of magnetic field and thus the experimental results are totally different from the magneto-oscillation.

AB - We report the first observation of the resonant tunneling features associated with the quantized levels in the accumulation layer of the double-barrier resonant tunneling structure (DBRTS) with undoped electrodes. This quantum effect causes additional kinks in the current-voltage (I-V) characteristic and an increasingly enhanced oscillation behavior in the differential conductance-voltage (G-V) curve. Three discrete quantum levels have been observed based on the room-temperature G-V curve. Our measurements are made without the presence of magnetic field and thus the experimental results are totally different from the magneto-oscillation.

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Wu J-S, Chang CY, Lee CP, Chang KH, Liu DG, Liou DC. Resonant tunneling of electrons from quantized levels in the accumulation layer of double-barrier heterostructures. Applied Physics Letters. 1990 Dec 1;57(22):2311-2312. https://doi.org/10.1063/1.103879

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