Resonant tunneling of electrons from quantized levels in the accumulation layer of double-barrier heterostructures

J. S. Wu, C. Y. Chang, C. P. Lee, K. H. Chang, D. G. Liu, D. C. Liou

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

We report the first observation of the resonant tunneling features associated with the quantized levels in the accumulation layer of the double-barrier resonant tunneling structure (DBRTS) with undoped electrodes. This quantum effect causes additional kinks in the current-voltage (I-V) characteristic and an increasingly enhanced oscillation behavior in the differential conductance-voltage (G-V) curve. Three discrete quantum levels have been observed based on the room-temperature G-V curve. Our measurements are made without the presence of magnetic field and thus the experimental results are totally different from the magneto-oscillation.

Original languageEnglish
Pages (from-to)2311-2312
Number of pages2
JournalApplied Physics Letters
Volume57
Issue number22
DOIs
Publication statusPublished - 1990 Dec 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Resonant tunneling of electrons from quantized levels in the accumulation layer of double-barrier heterostructures'. Together they form a unique fingerprint.

  • Cite this