Resonant tunneling of electrons from quantized levels in the accumulation layer of double-barrier heterostructures

J. S. Wu; C. Y. Chang; C. P. Lee; K. H. Chang; D. G. Liu; D. C. Liou

doi:10.1063/1.103879

Resonant tunneling of electrons from quantized levels in the accumulation layer of double-barrier heterostructures

J. S. Wu, C. Y. Chang, C. P. Lee, K. H. Chang, D. G. Liu, D. C. Liou

Department of Electronic Engineering

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18 Citations (Scopus)

Abstract

We report the first observation of the resonant tunneling features associated with the quantized levels in the accumulation layer of the double-barrier resonant tunneling structure (DBRTS) with undoped electrodes. This quantum effect causes additional kinks in the current-voltage (I-V) characteristic and an increasingly enhanced oscillation behavior in the differential conductance-voltage (G-V) curve. Three discrete quantum levels have been observed based on the room-temperature G-V curve. Our measurements are made without the presence of magnetic field and thus the experimental results are totally different from the magneto-oscillation.

Original language	English
Pages (from-to)	2311-2312
Number of pages	2
Journal	Applied Physics Letters
Volume	57
Issue number	22
DOIs	https://doi.org/10.1063/1.103879
Publication status	Published - 1990 Dec 1

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All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Cite this

Wu, J. S., Chang, C. Y., Lee, C. P., Chang, K. H., Liu, D. G., & Liou, D. C. (1990). Resonant tunneling of electrons from quantized levels in the accumulation layer of double-barrier heterostructures. Applied Physics Letters, 57(22), 2311-2312. https://doi.org/10.1063/1.103879

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10.1063/1.103879