Abstract
We report the first observation of the resonant tunneling features associated with the quantized levels in the accumulation layer of the double-barrier resonant tunneling structure (DBRTS) with undoped electrodes. This quantum effect causes additional kinks in the current-voltage (I-V) characteristic and an increasingly enhanced oscillation behavior in the differential conductance-voltage (G-V) curve. Three discrete quantum levels have been observed based on the room-temperature G-V curve. Our measurements are made without the presence of magnetic field and thus the experimental results are totally different from the magneto-oscillation.
| Original language | English |
|---|---|
| Pages (from-to) | 2311-2312 |
| Number of pages | 2 |
| Journal | Applied Physics Letters |
| Volume | 57 |
| Issue number | 22 |
| DOIs | |
| Publication status | Published - 1990 Dec 1 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
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Wu, J. S., Chang, C. Y., Lee, C. P., Chang, K. H., Liu, D. G., & Liou, D. C. (1990). Resonant tunneling of electrons from quantized levels in the accumulation layer of double-barrier heterostructures. Applied Physics Letters, 57(22), 2311-2312. https://doi.org/10.1063/1.103879