Resonant tunneling of electrons from quantized levels in the accumulation layer of double-barrier heterostructures

J. S. Wu, C. Y. Chang, C. P. Lee, K. H. Chang, D. G. Liu, D. C. Liou

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We report the first observation of the resonant tunneling features associated with the quantized levels in the accumulation layer of the double-barrier resonant tunneling structure (DBRTS) with undoped electrodes. This quantum effect causes additional kinks in the current-voltage (I-V) characteristic and an increasingly enhanced oscillation behavior in the differential conductance-voltage (G-V) curve. Three discrete quantum levels have been observed based on the room-temperature G-V curve. Our measurements are made without the presence of magnetic field and thus the experimental results are totally different from the magneto-oscillation.

Original languageEnglish
Pages (from-to)2311-2312
Number of pages2
JournalApplied Physics Letters
Issue number22
Publication statusPublished - 1990 Dec 1


All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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