Resonant inelastic scattering in dilute magnetic semiconductors by soft X-ray fluorescence spectroscopy

K. Lawniczak-Jablonska; J. J. Jia; Lin Lin; M. M. Grush; T. A. Callcott; A. Asfaw; J. A. Carlisle; L. J. Terminello; F. J. Himpsel; D. L. Ederer; J. H. Underwood; R. C.C. Perera

doi:10.1007/s003390050561

Resonant inelastic scattering in dilute magnetic semiconductors by soft X-ray fluorescence spectroscopy

K. Lawniczak-Jablonska, J. J. Jia, Lin Lin, M. M. Grush, T. A. Callcott, A. Asfaw, J. A. Carlisle, L. J. Terminello, F. J. Himpsel, D. L. Ederer, J. H. Underwood, R. C.C. Perera

Department of Physics

Research output: Contribution to journal › Article › peer-review

Abstract

Soft X-ray fluorescence (SXF) provides a means of measuring the element and angular momentum selective valence band density of states in complex materials. Recent studies have demonstrated that SXF excited near the absorption threshold generates an array of spectral features that depend on the nature of the material, particularly on the localization of excited states in s- and d-band solids. The current interest in dilute magnetic semiconductors (DMS) remains highly motivated by recent prospective applications, especially in optoelectronics. The Mn and S - L resonant X-ray emission spectra of Zn_1-xMn_xS (where 0.05 ≤ x ≤ 1) were measured as the energy of the exciting radiation was tuned across the S and Mn -L_2,3 absorption edges of these compounds. Strong resonance peaks in Mn -L emission spectra and the systematic appearance of new spectral features in S -L emission spectra were observed. Partial substitution of Zn by a magnetic Mn ion results in strong hybridization of the Mn 3d orbitals with the sp band of the host semiconductor. A detailed study of resonant inelastic scattering in the vicinity of the S and Mn -L_2,3 absorption edges of these DMS is presented.

Original language	English
Pages (from-to)	173-177
Number of pages	5
Journal	Applied Physics A: Materials Science and Processing
Volume	65
Issue number	2
DOIs	https://doi.org/10.1007/s003390050561
Publication status	Published - 1997 Jan 1

All Science Journal Classification (ASJC) codes

Chemistry(all)
Materials Science(all)

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Lawniczak-Jablonska, K., Jia, J. J., Lin, L., Grush, M. M., Callcott, T. A., Asfaw, A., Carlisle, J. A., Terminello, L. J., Himpsel, F. J., Ederer, D. L., Underwood, J. H., & Perera, R. C. C. (1997). Resonant inelastic scattering in dilute magnetic semiconductors by soft X-ray fluorescence spectroscopy. Applied Physics A: Materials Science and Processing, 65(2), 173-177. https://doi.org/10.1007/s003390050561

Lawniczak-Jablonska, K. ; Jia, J. J. ; Lin, Lin ; Grush, M. M. ; Callcott, T. A. ; Asfaw, A. ; Carlisle, J. A. ; Terminello, L. J. ; Himpsel, F. J. ; Ederer, D. L. ; Underwood, J. H. ; Perera, R. C.C. / Resonant inelastic scattering in dilute magnetic semiconductors by soft X-ray fluorescence spectroscopy. In: Applied Physics A: Materials Science and Processing. 1997 ; Vol. 65, No. 2. pp. 173-177.

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title = "Resonant inelastic scattering in dilute magnetic semiconductors by soft X-ray fluorescence spectroscopy",

abstract = "Soft X-ray fluorescence (SXF) provides a means of measuring the element and angular momentum selective valence band density of states in complex materials. Recent studies have demonstrated that SXF excited near the absorption threshold generates an array of spectral features that depend on the nature of the material, particularly on the localization of excited states in s- and d-band solids. The current interest in dilute magnetic semiconductors (DMS) remains highly motivated by recent prospective applications, especially in optoelectronics. The Mn and S - L resonant X-ray emission spectra of Zn1-xMnxS (where 0.05 ≤ x ≤ 1) were measured as the energy of the exciting radiation was tuned across the S and Mn -L2,3 absorption edges of these compounds. Strong resonance peaks in Mn -L emission spectra and the systematic appearance of new spectral features in S -L emission spectra were observed. Partial substitution of Zn by a magnetic Mn ion results in strong hybridization of the Mn 3d orbitals with the sp band of the host semiconductor. A detailed study of resonant inelastic scattering in the vicinity of the S and Mn -L2,3 absorption edges of these DMS is presented.",

author = "K. Lawniczak-Jablonska and Jia, {J. J.} and Lin Lin and Grush, {M. M.} and Callcott, {T. A.} and A. Asfaw and Carlisle, {J. A.} and Terminello, {L. J.} and Himpsel, {F. J.} and Ederer, {D. L.} and Underwood, {J. H.} and Perera, {R. C.C.}",

year = "1997",

month = jan,

day = "1",

doi = "10.1007/s003390050561",

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volume = "65",

pages = "173--177",

journal = "Applied Physics",

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Lawniczak-Jablonska, K, Jia, JJ, Lin, L, Grush, MM, Callcott, TA, Asfaw, A, Carlisle, JA, Terminello, LJ, Himpsel, FJ, Ederer, DL, Underwood, JH & Perera, RCC 1997, 'Resonant inelastic scattering in dilute magnetic semiconductors by soft X-ray fluorescence spectroscopy', Applied Physics A: Materials Science and Processing, vol. 65, no. 2, pp. 173-177. https://doi.org/10.1007/s003390050561

Resonant inelastic scattering in dilute magnetic semiconductors by soft X-ray fluorescence spectroscopy. / Lawniczak-Jablonska, K.; Jia, J. J.; Lin, Lin; Grush, M. M.; Callcott, T. A.; Asfaw, A.; Carlisle, J. A.; Terminello, L. J.; Himpsel, F. J.; Ederer, D. L.; Underwood, J. H.; Perera, R. C.C.

In: Applied Physics A: Materials Science and Processing, Vol. 65, No. 2, 01.01.1997, p. 173-177.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Resonant inelastic scattering in dilute magnetic semiconductors by soft X-ray fluorescence spectroscopy

AU - Lawniczak-Jablonska, K.

AU - Jia, J. J.

AU - Lin, Lin

AU - Grush, M. M.

AU - Callcott, T. A.

AU - Asfaw, A.

AU - Carlisle, J. A.

AU - Terminello, L. J.

AU - Himpsel, F. J.

AU - Ederer, D. L.

AU - Underwood, J. H.

AU - Perera, R. C.C.

PY - 1997/1/1

Y1 - 1997/1/1

N2 - Soft X-ray fluorescence (SXF) provides a means of measuring the element and angular momentum selective valence band density of states in complex materials. Recent studies have demonstrated that SXF excited near the absorption threshold generates an array of spectral features that depend on the nature of the material, particularly on the localization of excited states in s- and d-band solids. The current interest in dilute magnetic semiconductors (DMS) remains highly motivated by recent prospective applications, especially in optoelectronics. The Mn and S - L resonant X-ray emission spectra of Zn1-xMnxS (where 0.05 ≤ x ≤ 1) were measured as the energy of the exciting radiation was tuned across the S and Mn -L2,3 absorption edges of these compounds. Strong resonance peaks in Mn -L emission spectra and the systematic appearance of new spectral features in S -L emission spectra were observed. Partial substitution of Zn by a magnetic Mn ion results in strong hybridization of the Mn 3d orbitals with the sp band of the host semiconductor. A detailed study of resonant inelastic scattering in the vicinity of the S and Mn -L2,3 absorption edges of these DMS is presented.

AB - Soft X-ray fluorescence (SXF) provides a means of measuring the element and angular momentum selective valence band density of states in complex materials. Recent studies have demonstrated that SXF excited near the absorption threshold generates an array of spectral features that depend on the nature of the material, particularly on the localization of excited states in s- and d-band solids. The current interest in dilute magnetic semiconductors (DMS) remains highly motivated by recent prospective applications, especially in optoelectronics. The Mn and S - L resonant X-ray emission spectra of Zn1-xMnxS (where 0.05 ≤ x ≤ 1) were measured as the energy of the exciting radiation was tuned across the S and Mn -L2,3 absorption edges of these compounds. Strong resonance peaks in Mn -L emission spectra and the systematic appearance of new spectral features in S -L emission spectra were observed. Partial substitution of Zn by a magnetic Mn ion results in strong hybridization of the Mn 3d orbitals with the sp band of the host semiconductor. A detailed study of resonant inelastic scattering in the vicinity of the S and Mn -L2,3 absorption edges of these DMS is presented.

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