Resonance phenomenon in double-bend-point contact structures

Jong-Ching Wu; Martin N. Wybourne; Andreas Weisshaar; Stephen M. Goodnick

Resonance phenomenon in double-bend-point contact structures

Jong-Ching Wu, Martin N. Wybourne, Andreas Weisshaar, Stephen M. Goodnick

Department of Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

Quantum wires with double bend discontinuities have been fabricated in modulation-doped field-effect transistors. The low temperature conductance shows resonant peaks in the lowest quantized conductance plateau. The double bend constitutes an electron cavity where the number of peaks is directly related to the cavity length. This view is supported by comparison to the theoretical conductance calculated from a generalized mode-matching theory. The experimental peak conductivity decreases with cavity length, which is consistent with elastic scattering due to random disorder in the quantum wire. Magnetic field studies show quenching of the resonance structure when the cyclotron radius approaches the one-dimensional channel width.

Original language	English
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Publisher	Publ by Int Soc for Optical Engineering
Pages	200-209
Number of pages	10
ISBN (Print)	0819408379
Publication status	Published - 1992 Dec 1
Event	Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication - Somerset, NJ, USA Duration: 1992 Mar 23 → 1992 Mar 26

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	1676
ISSN (Print)	0277-786X

Other

Other	Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication
City	Somerset, NJ, USA
Period	92-03-23 → 92-03-26

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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@inproceedings{7870cbda7d604153ad70b36bb98ec650,

title = "Resonance phenomenon in double-bend-point contact structures",

abstract = "Quantum wires with double bend discontinuities have been fabricated in modulation-doped field-effect transistors. The low temperature conductance shows resonant peaks in the lowest quantized conductance plateau. The double bend constitutes an electron cavity where the number of peaks is directly related to the cavity length. This view is supported by comparison to the theoretical conductance calculated from a generalized mode-matching theory. The experimental peak conductivity decreases with cavity length, which is consistent with elastic scattering due to random disorder in the quantum wire. Magnetic field studies show quenching of the resonance structure when the cyclotron radius approaches the one-dimensional channel width.",

author = "Jong-Ching Wu and Wybourne, {Martin N.} and Andreas Weisshaar and Goodnick, {Stephen M.}",

year = "1992",

month = dec,

day = "1",

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series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "Publ by Int Soc for Optical Engineering",

pages = "200--209",

booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

note = "Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication ; Conference date: 23-03-1992 Through 26-03-1992",

}

Wu, J-C, Wybourne, MN, Weisshaar, A & Goodnick, SM 1992, Resonance phenomenon in double-bend-point contact structures. in Proceedings of SPIE - The International Society for Optical Engineering. Proceedings of SPIE - The International Society for Optical Engineering, vol. 1676, Publ by Int Soc for Optical Engineering, pp. 200-209, Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication, Somerset, NJ, USA, 92-03-23.

Resonance phenomenon in double-bend-point contact structures. / Wu, Jong-Ching; Wybourne, Martin N.; Weisshaar, Andreas; Goodnick, Stephen M.

Proceedings of SPIE - The International Society for Optical Engineering. Publ by Int Soc for Optical Engineering, 1992. p. 200-209 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 1676).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Resonance phenomenon in double-bend-point contact structures

AU - Wu, Jong-Ching

AU - Wybourne, Martin N.

AU - Weisshaar, Andreas

AU - Goodnick, Stephen M.

PY - 1992/12/1

Y1 - 1992/12/1

N2 - Quantum wires with double bend discontinuities have been fabricated in modulation-doped field-effect transistors. The low temperature conductance shows resonant peaks in the lowest quantized conductance plateau. The double bend constitutes an electron cavity where the number of peaks is directly related to the cavity length. This view is supported by comparison to the theoretical conductance calculated from a generalized mode-matching theory. The experimental peak conductivity decreases with cavity length, which is consistent with elastic scattering due to random disorder in the quantum wire. Magnetic field studies show quenching of the resonance structure when the cyclotron radius approaches the one-dimensional channel width.

AB - Quantum wires with double bend discontinuities have been fabricated in modulation-doped field-effect transistors. The low temperature conductance shows resonant peaks in the lowest quantized conductance plateau. The double bend constitutes an electron cavity where the number of peaks is directly related to the cavity length. This view is supported by comparison to the theoretical conductance calculated from a generalized mode-matching theory. The experimental peak conductivity decreases with cavity length, which is consistent with elastic scattering due to random disorder in the quantum wire. Magnetic field studies show quenching of the resonance structure when the cyclotron radius approaches the one-dimensional channel width.

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M3 - Conference contribution

AN - SCOPUS:0026973311

SN - 0819408379

T3 - Proceedings of SPIE - The International Society for Optical Engineering

SP - 200

EP - 209

BT - Proceedings of SPIE - The International Society for Optical Engineering

PB - Publ by Int Soc for Optical Engineering

T2 - Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication

Y2 - 23 March 1992 through 26 March 1992

ER -