Abstract
Quantum wires with double bend discontinuities have been fabricated in modulation-doped field-effect transistors. The low temperature conductance shows resonant peaks in the lowest quantized conductance plateau. The double bend constitutes an electron cavity where the number of peaks is directly related to the cavity length. This view is supported by comparison to the theoretical conductance calculated from a generalized mode-matching theory. The experimental peak conductivity decreases with cavity length, which is consistent with elastic scattering due to random disorder in the quantum wire. Magnetic field studies show quenching of the resonance structure when the cyclotron radius approaches the one-dimensional channel width.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
| Publisher | Publ by Int Soc for Optical Engineering |
| Pages | 200-209 |
| Number of pages | 10 |
| ISBN (Print) | 0819408379 |
| Publication status | Published - 1992 Dec 1 |
| Event | Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication - Somerset, NJ, USA Duration: 1992 Mar 23 → 1992 Mar 26 |
Publication series
| Name | Proceedings of SPIE - The International Society for Optical Engineering |
|---|---|
| Volume | 1676 |
| ISSN (Print) | 0277-786X |
Other
| Other | Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication |
|---|---|
| City | Somerset, NJ, USA |
| Period | 92-03-23 → 92-03-26 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering
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Cite this
Wu, J-C., Wybourne, M. N., Weisshaar, A., & Goodnick, S. M. (1992). Resonance phenomenon in double-bend-point contact structures. In Proceedings of SPIE - The International Society for Optical Engineering (pp. 200-209). (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 1676). Publ by Int Soc for Optical Engineering.