TY - GEN
T1 - Resonance phenomenon in double-bend-point contact structures
AU - Wu, Jong-Ching
AU - Wybourne, Martin N.
AU - Weisshaar, Andreas
AU - Goodnick, Stephen M.
PY - 1992/12/1
Y1 - 1992/12/1
N2 - Quantum wires with double bend discontinuities have been fabricated in modulation-doped field-effect transistors. The low temperature conductance shows resonant peaks in the lowest quantized conductance plateau. The double bend constitutes an electron cavity where the number of peaks is directly related to the cavity length. This view is supported by comparison to the theoretical conductance calculated from a generalized mode-matching theory. The experimental peak conductivity decreases with cavity length, which is consistent with elastic scattering due to random disorder in the quantum wire. Magnetic field studies show quenching of the resonance structure when the cyclotron radius approaches the one-dimensional channel width.
AB - Quantum wires with double bend discontinuities have been fabricated in modulation-doped field-effect transistors. The low temperature conductance shows resonant peaks in the lowest quantized conductance plateau. The double bend constitutes an electron cavity where the number of peaks is directly related to the cavity length. This view is supported by comparison to the theoretical conductance calculated from a generalized mode-matching theory. The experimental peak conductivity decreases with cavity length, which is consistent with elastic scattering due to random disorder in the quantum wire. Magnetic field studies show quenching of the resonance structure when the cyclotron radius approaches the one-dimensional channel width.
UR - http://www.scopus.com/inward/record.url?scp=0026973311&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0026973311&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0026973311
SN - 0819408379
T3 - Proceedings of SPIE - The International Society for Optical Engineering
SP - 200
EP - 209
BT - Proceedings of SPIE - The International Society for Optical Engineering
PB - Publ by Int Soc for Optical Engineering
T2 - Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication
Y2 - 23 March 1992 through 26 March 1992
ER -