Abstract
The multilevel resistive switching (RS) characteristics of In/CuAlO1.85/CuAlO1.92/CuAlO1.85/heavily doped n-type Si (n+-Si) devices are studied. The sensitivity of the RS characteristics to visible light illumination provides an opportunity to realize stable and reliable RS properties. The In/CuAlO1.85/CuAlO1.92/CuAlO1.85/n+-Si device in the dark shows RS behavior, whereas the In/CuAlO1.85/CuAlO1.92/CuAlO1.85/n+-Si device under visible light illumination exhibits the set/reset-free characteristics and the absence of the hysteresis window. The oxygen vacancy (VO)–solar irradiation interaction is proposed to describe the multilevel RS characteristic for the In/CuAlO1.85/CuAlO1.92/CuAlO1.85/n+-Si device. The significant RS degradation for devices under light illumination is due to the charge change of VO states. The switching conduction mechanism is primarily described as space charge limited conduction according to the electrical transport properties measurement. The findings show the importance of simultaneous control of the positively charged VO density and VO distribution in achieving optimization of oxide-based memory devices.
| Original language | English |
|---|---|
| Pages (from-to) | 14377-14384 |
| Number of pages | 8 |
| Journal | Journal of Materials Science: Materials in Electronics |
| Volume | 28 |
| Issue number | 19 |
| DOIs | |
| Publication status | Published - 2017 Oct 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering
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Resistive switching characteristics of devices having a trilayer CuAlOx structure in the dark and under visible light illumination. / Lin, Yow-Jon; Ke, Zun Yuan.
In: Journal of Materials Science: Materials in Electronics, Vol. 28, No. 19, 01.10.2017, p. 14377-14384.Research output: Contribution to journal › Article
TY - JOUR
T1 - Resistive switching characteristics of devices having a trilayer CuAlOx structure in the dark and under visible light illumination
AU - Lin, Yow-Jon
AU - Ke, Zun Yuan
PY - 2017/10/1
Y1 - 2017/10/1
N2 - The multilevel resistive switching (RS) characteristics of In/CuAlO1.85/CuAlO1.92/CuAlO1.85/heavily doped n-type Si (n+-Si) devices are studied. The sensitivity of the RS characteristics to visible light illumination provides an opportunity to realize stable and reliable RS properties. The In/CuAlO1.85/CuAlO1.92/CuAlO1.85/n+-Si device in the dark shows RS behavior, whereas the In/CuAlO1.85/CuAlO1.92/CuAlO1.85/n+-Si device under visible light illumination exhibits the set/reset-free characteristics and the absence of the hysteresis window. The oxygen vacancy (VO)–solar irradiation interaction is proposed to describe the multilevel RS characteristic for the In/CuAlO1.85/CuAlO1.92/CuAlO1.85/n+-Si device. The significant RS degradation for devices under light illumination is due to the charge change of VO states. The switching conduction mechanism is primarily described as space charge limited conduction according to the electrical transport properties measurement. The findings show the importance of simultaneous control of the positively charged VO density and VO distribution in achieving optimization of oxide-based memory devices.
AB - The multilevel resistive switching (RS) characteristics of In/CuAlO1.85/CuAlO1.92/CuAlO1.85/heavily doped n-type Si (n+-Si) devices are studied. The sensitivity of the RS characteristics to visible light illumination provides an opportunity to realize stable and reliable RS properties. The In/CuAlO1.85/CuAlO1.92/CuAlO1.85/n+-Si device in the dark shows RS behavior, whereas the In/CuAlO1.85/CuAlO1.92/CuAlO1.85/n+-Si device under visible light illumination exhibits the set/reset-free characteristics and the absence of the hysteresis window. The oxygen vacancy (VO)–solar irradiation interaction is proposed to describe the multilevel RS characteristic for the In/CuAlO1.85/CuAlO1.92/CuAlO1.85/n+-Si device. The significant RS degradation for devices under light illumination is due to the charge change of VO states. The switching conduction mechanism is primarily described as space charge limited conduction according to the electrical transport properties measurement. The findings show the importance of simultaneous control of the positively charged VO density and VO distribution in achieving optimization of oxide-based memory devices.
UR - http://www.scopus.com/inward/record.url?scp=85020690736&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85020690736&partnerID=8YFLogxK
U2 - 10.1007/s10854-017-7298-3
DO - 10.1007/s10854-017-7298-3
M3 - Article
AN - SCOPUS:85020690736
VL - 28
SP - 14377
EP - 14384
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
SN - 0957-4522
IS - 19
ER -