Resistive switching characteristics of devices having a trilayer CuAlOx structure in the dark and under visible light illumination

Yow-Jon Lin, Zun Yuan Ke

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The multilevel resistive switching (RS) characteristics of In/CuAlO1.85/CuAlO1.92/CuAlO1.85/heavily doped n-type Si (n+-Si) devices are studied. The sensitivity of the RS characteristics to visible light illumination provides an opportunity to realize stable and reliable RS properties. The In/CuAlO1.85/CuAlO1.92/CuAlO1.85/n+-Si device in the dark shows RS behavior, whereas the In/CuAlO1.85/CuAlO1.92/CuAlO1.85/n+-Si device under visible light illumination exhibits the set/reset-free characteristics and the absence of the hysteresis window. The oxygen vacancy (VO)–solar irradiation interaction is proposed to describe the multilevel RS characteristic for the In/CuAlO1.85/CuAlO1.92/CuAlO1.85/n+-Si device. The significant RS degradation for devices under light illumination is due to the charge change of VO states. The switching conduction mechanism is primarily described as space charge limited conduction according to the electrical transport properties measurement. The findings show the importance of simultaneous control of the positively charged VO density and VO distribution in achieving optimization of oxide-based memory devices.

Original languageEnglish
Pages (from-to)14377-14384
Number of pages8
JournalJournal of Materials Science: Materials in Electronics
Volume28
Issue number19
DOIs
Publication statusPublished - 2017 Oct 1

Fingerprint

Lighting
illumination
conduction
Oxygen vacancies
Electric space charge
Transport properties
Oxides
density distribution
Hysteresis
space charge
transport properties
Phase transitions
hysteresis
Irradiation
Data storage equipment
optimization
irradiation
oxides
sensitivity
oxygen

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

@article{062cac1060884dbb8a37d52dea661bf0,
title = "Resistive switching characteristics of devices having a trilayer CuAlOx structure in the dark and under visible light illumination",
abstract = "The multilevel resistive switching (RS) characteristics of In/CuAlO1.85/CuAlO1.92/CuAlO1.85/heavily doped n-type Si (n+-Si) devices are studied. The sensitivity of the RS characteristics to visible light illumination provides an opportunity to realize stable and reliable RS properties. The In/CuAlO1.85/CuAlO1.92/CuAlO1.85/n+-Si device in the dark shows RS behavior, whereas the In/CuAlO1.85/CuAlO1.92/CuAlO1.85/n+-Si device under visible light illumination exhibits the set/reset-free characteristics and the absence of the hysteresis window. The oxygen vacancy (VO)–solar irradiation interaction is proposed to describe the multilevel RS characteristic for the In/CuAlO1.85/CuAlO1.92/CuAlO1.85/n+-Si device. The significant RS degradation for devices under light illumination is due to the charge change of VO states. The switching conduction mechanism is primarily described as space charge limited conduction according to the electrical transport properties measurement. The findings show the importance of simultaneous control of the positively charged VO density and VO distribution in achieving optimization of oxide-based memory devices.",
author = "Yow-Jon Lin and Ke, {Zun Yuan}",
year = "2017",
month = "10",
day = "1",
doi = "10.1007/s10854-017-7298-3",
language = "English",
volume = "28",
pages = "14377--14384",
journal = "Journal of Materials Science: Materials in Electronics",
issn = "0957-4522",
publisher = "Springer New York",
number = "19",

}

TY - JOUR

T1 - Resistive switching characteristics of devices having a trilayer CuAlOx structure in the dark and under visible light illumination

AU - Lin, Yow-Jon

AU - Ke, Zun Yuan

PY - 2017/10/1

Y1 - 2017/10/1

N2 - The multilevel resistive switching (RS) characteristics of In/CuAlO1.85/CuAlO1.92/CuAlO1.85/heavily doped n-type Si (n+-Si) devices are studied. The sensitivity of the RS characteristics to visible light illumination provides an opportunity to realize stable and reliable RS properties. The In/CuAlO1.85/CuAlO1.92/CuAlO1.85/n+-Si device in the dark shows RS behavior, whereas the In/CuAlO1.85/CuAlO1.92/CuAlO1.85/n+-Si device under visible light illumination exhibits the set/reset-free characteristics and the absence of the hysteresis window. The oxygen vacancy (VO)–solar irradiation interaction is proposed to describe the multilevel RS characteristic for the In/CuAlO1.85/CuAlO1.92/CuAlO1.85/n+-Si device. The significant RS degradation for devices under light illumination is due to the charge change of VO states. The switching conduction mechanism is primarily described as space charge limited conduction according to the electrical transport properties measurement. The findings show the importance of simultaneous control of the positively charged VO density and VO distribution in achieving optimization of oxide-based memory devices.

AB - The multilevel resistive switching (RS) characteristics of In/CuAlO1.85/CuAlO1.92/CuAlO1.85/heavily doped n-type Si (n+-Si) devices are studied. The sensitivity of the RS characteristics to visible light illumination provides an opportunity to realize stable and reliable RS properties. The In/CuAlO1.85/CuAlO1.92/CuAlO1.85/n+-Si device in the dark shows RS behavior, whereas the In/CuAlO1.85/CuAlO1.92/CuAlO1.85/n+-Si device under visible light illumination exhibits the set/reset-free characteristics and the absence of the hysteresis window. The oxygen vacancy (VO)–solar irradiation interaction is proposed to describe the multilevel RS characteristic for the In/CuAlO1.85/CuAlO1.92/CuAlO1.85/n+-Si device. The significant RS degradation for devices under light illumination is due to the charge change of VO states. The switching conduction mechanism is primarily described as space charge limited conduction according to the electrical transport properties measurement. The findings show the importance of simultaneous control of the positively charged VO density and VO distribution in achieving optimization of oxide-based memory devices.

UR - http://www.scopus.com/inward/record.url?scp=85020690736&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85020690736&partnerID=8YFLogxK

U2 - 10.1007/s10854-017-7298-3

DO - 10.1007/s10854-017-7298-3

M3 - Article

AN - SCOPUS:85020690736

VL - 28

SP - 14377

EP - 14384

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

SN - 0957-4522

IS - 19

ER -