Resistive switching behaviors of Au/pentacene/Si-nanowire arrays/heavily doped n-type Si devices for memory applications

Hou Yen Tsao; Yow Jon Lin

doi:10.1063/1.4863830

Resistive switching behaviors of Au/pentacene/Si-nanowire arrays/heavily doped n-type Si devices for memory applications

Hou Yen Tsao, Yow Jon Lin

Graduate Institute of Photonics

Research output: Contribution to journal › Article

21 Citations (Scopus)

Abstract

The fabrication of memory devices based on the Au/pentacene/heavily doped n-type Si (n⁺-Si), Au/pentacene/Si nanowires (SiNWs)/n ⁺-Si, and Au/pentacene/H₂O₂-treated SiNWs/n⁺-Si structures and their resistive switching characteristics were reported. A pentacene memory structure using SiNW arrays as charge storage nodes was demonstrated. The Au/pentacene/SiNWs/n⁺-Si devices show hysteresis behavior. H₂O₂ treatment may lead to the hysteresis degradation. However, no hysteresis-type current-voltage characteristics were observed for Au/pentacene/n⁺-Si devices, indicating that the resistive switching characteristic is sensitive to SiNWs and the charge trapping effect originates from SiNWs. The concept of nanowires within the organic layer opens a promising direction for organic memory devices.

Original language	English
Article number	053501
Journal	Applied Physics Letters
Volume	104
Issue number	5
DOIs	https://doi.org/10.1063/1.4863830
Publication status	Published - 2014 Jan 1

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4863830

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Tsao, H. Y., & Lin, Y. J. (2014). Resistive switching behaviors of Au/pentacene/Si-nanowire arrays/heavily doped n-type Si devices for memory applications. Applied Physics Letters, 104(5), [053501]. https://doi.org/10.1063/1.4863830

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abstract = "The fabrication of memory devices based on the Au/pentacene/heavily doped n-type Si (n+-Si), Au/pentacene/Si nanowires (SiNWs)/n +-Si, and Au/pentacene/H2O2-treated SiNWs/n+-Si structures and their resistive switching characteristics were reported. A pentacene memory structure using SiNW arrays as charge storage nodes was demonstrated. The Au/pentacene/SiNWs/n+-Si devices show hysteresis behavior. H2O2 treatment may lead to the hysteresis degradation. However, no hysteresis-type current-voltage characteristics were observed for Au/pentacene/n+-Si devices, indicating that the resistive switching characteristic is sensitive to SiNWs and the charge trapping effect originates from SiNWs. The concept of nanowires within the organic layer opens a promising direction for organic memory devices.",

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