Resistive switching behavior of Ag/PMMA:Na/Ag devices for memory applications

Hou Yen Tsao; Yu-Wu Wang; Zhi Kui Gao

doi:10.1016/j.tsf.2016.05.035

Resistive switching behavior of Ag/PMMA:Na/Ag devices for memory applications

Hou Yen Tsao, Yu-Wu Wang, Zhi Kui Gao

Graduate Institute of Photonics

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The fabrication of memory devices based on the Ag/PMMA:Na/Ag structure and their electrical characteristics are reported. The Ag/PMMA:Na/Ag devices show a hysteresis behavior with different Na contents. The most evident hysteresis behavior for memory effect, represented as the on/off current ratio, is found to be as high as 10⁵ in Ag/PMMA:Na-180 s/Ag devices. The carrier conduction mechanisms between the high and low resistance states and the transition states are further examined on the basis of trap-assisted space charge limited current theory. Such devices sustain at least 60 operation iterations and 100 s duration tests. Hence, the idea of incorporating Na particles into the organic layer of memory devices creates a promising direction for the development of organic memory devices.

Original language	English
Pages (from-to)	61-65
Number of pages	5
Journal	Thin Solid Films
Volume	612
DOIs	https://doi.org/10.1016/j.tsf.2016.05.035
Publication status	Published - 2016 Aug 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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title = "Resistive switching behavior of Ag/PMMA:Na/Ag devices for memory applications",

abstract = "The fabrication of memory devices based on the Ag/PMMA:Na/Ag structure and their electrical characteristics are reported. The Ag/PMMA:Na/Ag devices show a hysteresis behavior with different Na contents. The most evident hysteresis behavior for memory effect, represented as the on/off current ratio, is found to be as high as 105 in Ag/PMMA:Na-180 s/Ag devices. The carrier conduction mechanisms between the high and low resistance states and the transition states are further examined on the basis of trap-assisted space charge limited current theory. Such devices sustain at least 60 operation iterations and 100 s duration tests. Hence, the idea of incorporating Na particles into the organic layer of memory devices creates a promising direction for the development of organic memory devices.",

author = "Tsao, {Hou Yen} and Yu-Wu Wang and Gao, {Zhi Kui}",

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AU - Tsao, Hou Yen

AU - Wang, Yu-Wu

AU - Gao, Zhi Kui

PY - 2016/8/1

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N2 - The fabrication of memory devices based on the Ag/PMMA:Na/Ag structure and their electrical characteristics are reported. The Ag/PMMA:Na/Ag devices show a hysteresis behavior with different Na contents. The most evident hysteresis behavior for memory effect, represented as the on/off current ratio, is found to be as high as 105 in Ag/PMMA:Na-180 s/Ag devices. The carrier conduction mechanisms between the high and low resistance states and the transition states are further examined on the basis of trap-assisted space charge limited current theory. Such devices sustain at least 60 operation iterations and 100 s duration tests. Hence, the idea of incorporating Na particles into the organic layer of memory devices creates a promising direction for the development of organic memory devices.

AB - The fabrication of memory devices based on the Ag/PMMA:Na/Ag structure and their electrical characteristics are reported. The Ag/PMMA:Na/Ag devices show a hysteresis behavior with different Na contents. The most evident hysteresis behavior for memory effect, represented as the on/off current ratio, is found to be as high as 105 in Ag/PMMA:Na-180 s/Ag devices. The carrier conduction mechanisms between the high and low resistance states and the transition states are further examined on the basis of trap-assisted space charge limited current theory. Such devices sustain at least 60 operation iterations and 100 s duration tests. Hence, the idea of incorporating Na particles into the organic layer of memory devices creates a promising direction for the development of organic memory devices.

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