Abstract
The fabrication of memory devices based on the Ag/PMMA:Na/Ag structure and their electrical characteristics are reported. The Ag/PMMA:Na/Ag devices show a hysteresis behavior with different Na contents. The most evident hysteresis behavior for memory effect, represented as the on/off current ratio, is found to be as high as 105 in Ag/PMMA:Na-180 s/Ag devices. The carrier conduction mechanisms between the high and low resistance states and the transition states are further examined on the basis of trap-assisted space charge limited current theory. Such devices sustain at least 60 operation iterations and 100 s duration tests. Hence, the idea of incorporating Na particles into the organic layer of memory devices creates a promising direction for the development of organic memory devices.
| Original language | English |
|---|---|
| Pages (from-to) | 61-65 |
| Number of pages | 5 |
| Journal | Thin Solid Films |
| Volume | 612 |
| DOIs | |
| Publication status | Published - 2016 Aug 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
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Resistive switching behavior of Ag/PMMA:Na/Ag devices for memory applications. / Tsao, Hou Yen; Wang, Yu-Wu; Gao, Zhi Kui.
In: Thin Solid Films, Vol. 612, 01.08.2016, p. 61-65.Research output: Contribution to journal › Article
TY - JOUR
T1 - Resistive switching behavior of Ag/PMMA:Na/Ag devices for memory applications
AU - Tsao, Hou Yen
AU - Wang, Yu-Wu
AU - Gao, Zhi Kui
PY - 2016/8/1
Y1 - 2016/8/1
N2 - The fabrication of memory devices based on the Ag/PMMA:Na/Ag structure and their electrical characteristics are reported. The Ag/PMMA:Na/Ag devices show a hysteresis behavior with different Na contents. The most evident hysteresis behavior for memory effect, represented as the on/off current ratio, is found to be as high as 105 in Ag/PMMA:Na-180 s/Ag devices. The carrier conduction mechanisms between the high and low resistance states and the transition states are further examined on the basis of trap-assisted space charge limited current theory. Such devices sustain at least 60 operation iterations and 100 s duration tests. Hence, the idea of incorporating Na particles into the organic layer of memory devices creates a promising direction for the development of organic memory devices.
AB - The fabrication of memory devices based on the Ag/PMMA:Na/Ag structure and their electrical characteristics are reported. The Ag/PMMA:Na/Ag devices show a hysteresis behavior with different Na contents. The most evident hysteresis behavior for memory effect, represented as the on/off current ratio, is found to be as high as 105 in Ag/PMMA:Na-180 s/Ag devices. The carrier conduction mechanisms between the high and low resistance states and the transition states are further examined on the basis of trap-assisted space charge limited current theory. Such devices sustain at least 60 operation iterations and 100 s duration tests. Hence, the idea of incorporating Na particles into the organic layer of memory devices creates a promising direction for the development of organic memory devices.
UR - http://www.scopus.com/inward/record.url?scp=84975299096&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84975299096&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2016.05.035
DO - 10.1016/j.tsf.2016.05.035
M3 - Article
AN - SCOPUS:84975299096
VL - 612
SP - 61
EP - 65
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
ER -