Abstract
The fabrication of memory devices based on the Ag/PMMA:Na/Ag structure and their electrical characteristics are reported. The Ag/PMMA:Na/Ag devices show a hysteresis behavior with different Na contents. The most evident hysteresis behavior for memory effect, represented as the on/off current ratio, is found to be as high as 105 in Ag/PMMA:Na-180 s/Ag devices. The carrier conduction mechanisms between the high and low resistance states and the transition states are further examined on the basis of trap-assisted space charge limited current theory. Such devices sustain at least 60 operation iterations and 100 s duration tests. Hence, the idea of incorporating Na particles into the organic layer of memory devices creates a promising direction for the development of organic memory devices.
Original language | English |
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Pages (from-to) | 61-65 |
Number of pages | 5 |
Journal | Thin Solid Films |
Volume | 612 |
DOIs | |
Publication status | Published - 2016 Aug 1 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry