Residual stress in CIGS thin film solar cells on polyimide: Simulation and experiments

Yi-Cheng or Y. C. Lin, Xiang Yu Peng, Li Ching Wang, Yao Leng Lin, Cheng Han Wu, Shih Chang Liang

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Sputtering technique is used to prepare Cu(In, Ga)Se2 (CIGS) thin film solar cells on a UPILEX-S 50S polyimide substrate in order to investigate the residual stress in the Mo back contact and CIGS absorber layer after sele-nized annealing with various the thickness ratios of the Mo contact, RMo. A comparison between the results ofnumerical simulation and those obtained from X-ray diffractometry, indicate the existence of compressive residual stress in both the Mo contact and the CIGS absorber layer. The residual stress in the Mo contact was inversely proportional to the residual stress in the CIGS absorber layer. Residual stress decreased with an increase in the thickness ratio of the Mo contact. The empirical formulae for the residual stresses as a function of RMo in the Mo and CIGS films were deduced, from the results of this study.

Original languageEnglish
Pages (from-to)461-465
Number of pages5
JournalJournal of Materials Science: Materials in Electronics
Volume25
Issue number1
DOIs
Publication statusPublished - 2014 Jan 1

Fingerprint

polyimides
Polyimides
residual stress
Residual stresses
solar cells
thin films
absorbers
thickness ratio
simulation
Experiments
Compressive stress
X ray diffraction analysis
Sputtering
Thin film solar cells
sputtering
Annealing
annealing
Substrates
x rays

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Lin, Yi-Cheng or Y. C. ; Peng, Xiang Yu ; Wang, Li Ching ; Lin, Yao Leng ; Wu, Cheng Han ; Liang, Shih Chang. / Residual stress in CIGS thin film solar cells on polyimide : Simulation and experiments. In: Journal of Materials Science: Materials in Electronics. 2014 ; Vol. 25, No. 1. pp. 461-465.
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Residual stress in CIGS thin film solar cells on polyimide : Simulation and experiments. / Lin, Yi-Cheng or Y. C.; Peng, Xiang Yu; Wang, Li Ching; Lin, Yao Leng; Wu, Cheng Han; Liang, Shih Chang.

In: Journal of Materials Science: Materials in Electronics, Vol. 25, No. 1, 01.01.2014, p. 461-465.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Residual stress in CIGS thin film solar cells on polyimide

T2 - Simulation and experiments

AU - Lin, Yi-Cheng or Y. C.

AU - Peng, Xiang Yu

AU - Wang, Li Ching

AU - Lin, Yao Leng

AU - Wu, Cheng Han

AU - Liang, Shih Chang

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AB - Sputtering technique is used to prepare Cu(In, Ga)Se2 (CIGS) thin film solar cells on a UPILEX-S 50S polyimide substrate in order to investigate the residual stress in the Mo back contact and CIGS absorber layer after sele-nized annealing with various the thickness ratios of the Mo contact, RMo. A comparison between the results ofnumerical simulation and those obtained from X-ray diffractometry, indicate the existence of compressive residual stress in both the Mo contact and the CIGS absorber layer. The residual stress in the Mo contact was inversely proportional to the residual stress in the CIGS absorber layer. Residual stress decreased with an increase in the thickness ratio of the Mo contact. The empirical formulae for the residual stresses as a function of RMo in the Mo and CIGS films were deduced, from the results of this study.

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