Research on a novel magnetic-catalytic sensing material on CMOS-MEMS gas sensor

Hsin Ying Chen, Chih-Hsiung Shen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this research, a novel magnetic catalyzed SnO2 with Mn3O4 of CMOS-MEMS gas sensor is firstly proposed. Beyond the conventional heating methods to obtain high chemical reaction rate, the sensitivity of gas sensors can be enhanced by using our proposed magnetic catalysis technique at ultra-low power consumption. Fabrication of sensor structure is realized by the standard 0.35μm CMOS process and MEMS post process. Preparing for the magnetic sensing material, the solution of SnCl4(aq) with powder of Mn3O4 and the precursor is mixed to obtain sol-gel solution. Measurement of gas concentration of monoxide is arranged in the gas chamber with solenoidal coils using magnetic material, SnO2-Mn3O4 coated onto a CMOS-MEMS gas sensor with donut-shaped stacked electrodes by horizontal magnetic field to facilitate sensitivity. Based on our mature CMOS-MEMS gas sensor structure and developed magnetic-catalytic sensing mechanism, the enhancement of sensitivity with SnO2-Mn3O4 is investigated and formulated with the Gibbs free energy and the Eyric equation. According to a careful investigation of the measurement results, the sensitivity of proposed CO gas sensor reaches 1.87%/ppm under the 6 Gauss. Moreover, the sensitivity of the novel material SnO2-Mn3O4 is better than our previous research with sensing material SnO2-Fe3O4. This research shows a highly practical application to CMOS gas sensor with a widespread magnetic-catalytic mechanism and sol-gel solution.

Original languageEnglish
Title of host publication2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages198-199
Number of pages2
ISBN (Electronic)9781479951451
DOIs
Publication statusPublished - 2014 Feb 3
Event2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014 - Tokyo, Japan
Duration: 2014 Oct 72014 Oct 10

Other

Other2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014
CountryJapan
CityTokyo
Period14-10-0714-10-10

Fingerprint

Chemical sensors
MEMS
Sol-gels
Magnetic materials
Gibbs free energy
Gases
Catalysis
Reaction rates
Chemical reactions
Electric power utilization
Magnetic fields
Heating
Powders
Fabrication
Electrodes
Sensors

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Chen, H. Y., & Shen, C-H. (2014). Research on a novel magnetic-catalytic sensing material on CMOS-MEMS gas sensor. In 2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014 (pp. 198-199). [7031247] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/GCCE.2014.7031247
Chen, Hsin Ying ; Shen, Chih-Hsiung. / Research on a novel magnetic-catalytic sensing material on CMOS-MEMS gas sensor. 2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 198-199
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abstract = "In this research, a novel magnetic catalyzed SnO2 with Mn3O4 of CMOS-MEMS gas sensor is firstly proposed. Beyond the conventional heating methods to obtain high chemical reaction rate, the sensitivity of gas sensors can be enhanced by using our proposed magnetic catalysis technique at ultra-low power consumption. Fabrication of sensor structure is realized by the standard 0.35μm CMOS process and MEMS post process. Preparing for the magnetic sensing material, the solution of SnCl4(aq) with powder of Mn3O4 and the precursor is mixed to obtain sol-gel solution. Measurement of gas concentration of monoxide is arranged in the gas chamber with solenoidal coils using magnetic material, SnO2-Mn3O4 coated onto a CMOS-MEMS gas sensor with donut-shaped stacked electrodes by horizontal magnetic field to facilitate sensitivity. Based on our mature CMOS-MEMS gas sensor structure and developed magnetic-catalytic sensing mechanism, the enhancement of sensitivity with SnO2-Mn3O4 is investigated and formulated with the Gibbs free energy and the Eyric equation. According to a careful investigation of the measurement results, the sensitivity of proposed CO gas sensor reaches 1.87{\%}/ppm under the 6 Gauss. Moreover, the sensitivity of the novel material SnO2-Mn3O4 is better than our previous research with sensing material SnO2-Fe3O4. This research shows a highly practical application to CMOS gas sensor with a widespread magnetic-catalytic mechanism and sol-gel solution.",
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Chen, HY & Shen, C-H 2014, Research on a novel magnetic-catalytic sensing material on CMOS-MEMS gas sensor. in 2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014., 7031247, Institute of Electrical and Electronics Engineers Inc., pp. 198-199, 2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014, Tokyo, Japan, 14-10-07. https://doi.org/10.1109/GCCE.2014.7031247

Research on a novel magnetic-catalytic sensing material on CMOS-MEMS gas sensor. / Chen, Hsin Ying; Shen, Chih-Hsiung.

2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 198-199 7031247.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AB - In this research, a novel magnetic catalyzed SnO2 with Mn3O4 of CMOS-MEMS gas sensor is firstly proposed. Beyond the conventional heating methods to obtain high chemical reaction rate, the sensitivity of gas sensors can be enhanced by using our proposed magnetic catalysis technique at ultra-low power consumption. Fabrication of sensor structure is realized by the standard 0.35μm CMOS process and MEMS post process. Preparing for the magnetic sensing material, the solution of SnCl4(aq) with powder of Mn3O4 and the precursor is mixed to obtain sol-gel solution. Measurement of gas concentration of monoxide is arranged in the gas chamber with solenoidal coils using magnetic material, SnO2-Mn3O4 coated onto a CMOS-MEMS gas sensor with donut-shaped stacked electrodes by horizontal magnetic field to facilitate sensitivity. Based on our mature CMOS-MEMS gas sensor structure and developed magnetic-catalytic sensing mechanism, the enhancement of sensitivity with SnO2-Mn3O4 is investigated and formulated with the Gibbs free energy and the Eyric equation. According to a careful investigation of the measurement results, the sensitivity of proposed CO gas sensor reaches 1.87%/ppm under the 6 Gauss. Moreover, the sensitivity of the novel material SnO2-Mn3O4 is better than our previous research with sensing material SnO2-Fe3O4. This research shows a highly practical application to CMOS gas sensor with a widespread magnetic-catalytic mechanism and sol-gel solution.

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Chen HY, Shen C-H. Research on a novel magnetic-catalytic sensing material on CMOS-MEMS gas sensor. In 2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 198-199. 7031247 https://doi.org/10.1109/GCCE.2014.7031247