Repetition of negative differential resistance in vertically integrated double-barrier resonant tunneling structures

J. S. Wu; C. P. Lee; C. Y. Chang; K. H. Chang; D. G. Liu; D. C. Liou

doi:10.1063/1.344910

Repetition of negative differential resistance in vertically integrated double-barrier resonant tunneling structures

J. S. Wu, C. P. Lee, C. Y. Chang, K. H. Chang, D. G. Liu, D. C. Liou

Department of Electronic Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We propose and demonstrate a novel operation in the vertical integration of double-barrier resonant tunneling structures (DBRTS's) in which the negative differential resistance (NDR) region can be repeated. When two DBRTS's are combined in series, one of which has a higher peak current, a lower valley current, and a larger operation range of voltage in the NDR region than those of the other, the current-voltage (I-V) characteristic shows three current peaks instead of the conventional two. This phenomenon is based on the fundamental requirement of current continuity in serially combined devices. This operation provides a method to obtain a large number of current peaks by using less DBRTS's.

Original language	English
Pages (from-to)	4382-4385
Number of pages	4
Journal	Journal of Applied Physics
Volume	67
Issue number	9
DOIs	https://doi.org/10.1063/1.344910
Publication status	Published - 1990 Dec 1

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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title = "Repetition of negative differential resistance in vertically integrated double-barrier resonant tunneling structures",

abstract = "We propose and demonstrate a novel operation in the vertical integration of double-barrier resonant tunneling structures (DBRTS's) in which the negative differential resistance (NDR) region can be repeated. When two DBRTS's are combined in series, one of which has a higher peak current, a lower valley current, and a larger operation range of voltage in the NDR region than those of the other, the current-voltage (I-V) characteristic shows three current peaks instead of the conventional two. This phenomenon is based on the fundamental requirement of current continuity in serially combined devices. This operation provides a method to obtain a large number of current peaks by using less DBRTS's.",

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T1 - Repetition of negative differential resistance in vertically integrated double-barrier resonant tunneling structures

AU - Wu, J. S.

AU - Lee, C. P.

AU - Chang, C. Y.

AU - Chang, K. H.

AU - Liu, D. G.

AU - Liou, D. C.

PY - 1990/12/1

Y1 - 1990/12/1

N2 - We propose and demonstrate a novel operation in the vertical integration of double-barrier resonant tunneling structures (DBRTS's) in which the negative differential resistance (NDR) region can be repeated. When two DBRTS's are combined in series, one of which has a higher peak current, a lower valley current, and a larger operation range of voltage in the NDR region than those of the other, the current-voltage (I-V) characteristic shows three current peaks instead of the conventional two. This phenomenon is based on the fundamental requirement of current continuity in serially combined devices. This operation provides a method to obtain a large number of current peaks by using less DBRTS's.

AB - We propose and demonstrate a novel operation in the vertical integration of double-barrier resonant tunneling structures (DBRTS's) in which the negative differential resistance (NDR) region can be repeated. When two DBRTS's are combined in series, one of which has a higher peak current, a lower valley current, and a larger operation range of voltage in the NDR region than those of the other, the current-voltage (I-V) characteristic shows three current peaks instead of the conventional two. This phenomenon is based on the fundamental requirement of current continuity in serially combined devices. This operation provides a method to obtain a large number of current peaks by using less DBRTS's.

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