Repair effect on patterned CoFeB-based magnetic tunneling junction using rapid thermal annealing

Kuo Ming Wu; Yung Hung Wang; Wei Chuan Chen; Shan Yi Yang; Kuei Hung Shen; Ming Jer Kao; Ming Jinn Tsai; Cheng Yi Kuo; Jong Ching Wu; Lance Horng

doi:10.1016/j.jmmm.2006.10.605

Repair effect on patterned CoFeB-based magnetic tunneling junction using rapid thermal annealing

Kuo Ming Wu, Yung Hung Wang, Wei Chuan Chen, Shan Yi Yang, Kuei Hung Shen, Ming Jer Kao, Ming Jinn Tsai, Cheng Yi Kuo, Jong Ching Wu, Lance Horng

Department of Physics

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Rapid thermal treatment without applying magnetic field reconstructing magnetic property of Co₆₀Fe₂₀B₂₀ was studied through magnetoresistance (R-H) measurement. In this paper, we report that the switching behaviors of CoFeB were obviously improved through rapid thermal annealing for only a brief 5 min. The squareness and reproduction of minor R-H loops were enhanced from 100 °C to 250 °C. Tunneling magnetoresistance (TMR) that is about 35% in the as-etched cells increases up to 44% after 250 °C rapid annealing and still shows about 25% TMR even after 400 °C treating. Therefore, repair purpose annealing is some what different from crystallizing purpose annealing. Applying magnetic field during repair annealing was not necessary. Brief thermal treatment improves CoFeB switching behavior indeed, and causes less damage at high temperature.

Original language	English
Pages (from-to)	1920-1922
Number of pages	3
Journal	Journal of Magnetism and Magnetic Materials
Volume	310
Issue number	2 SUPPL. PART 3
DOIs	https://doi.org/10.1016/j.jmmm.2006.10.605
Publication status	Published - 2007 Mar 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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@article{c3d85be11b354d5c9325abb55c847314,

title = "Repair effect on patterned CoFeB-based magnetic tunneling junction using rapid thermal annealing",

abstract = "Rapid thermal treatment without applying magnetic field reconstructing magnetic property of Co60Fe20B20 was studied through magnetoresistance (R-H) measurement. In this paper, we report that the switching behaviors of CoFeB were obviously improved through rapid thermal annealing for only a brief 5 min. The squareness and reproduction of minor R-H loops were enhanced from 100 °C to 250 °C. Tunneling magnetoresistance (TMR) that is about 35% in the as-etched cells increases up to 44% after 250 °C rapid annealing and still shows about 25% TMR even after 400 °C treating. Therefore, repair purpose annealing is some what different from crystallizing purpose annealing. Applying magnetic field during repair annealing was not necessary. Brief thermal treatment improves CoFeB switching behavior indeed, and causes less damage at high temperature.",

author = "Wu, {Kuo Ming} and Wang, {Yung Hung} and Chen, {Wei Chuan} and Yang, {Shan Yi} and Shen, {Kuei Hung} and Kao, {Ming Jer} and Tsai, {Ming Jinn} and Kuo, {Cheng Yi} and Wu, {Jong Ching} and Lance Horng",

year = "2007",

month = mar,

day = "1",

doi = "10.1016/j.jmmm.2006.10.605",

language = "English",

volume = "310",

pages = "1920--1922",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

publisher = "Elsevier",

number = "2 SUPPL. PART 3",

}

Repair effect on patterned CoFeB-based magnetic tunneling junction using rapid thermal annealing. / Wu, Kuo Ming; Wang, Yung Hung; Chen, Wei Chuan; Yang, Shan Yi; Shen, Kuei Hung; Kao, Ming Jer; Tsai, Ming Jinn; Kuo, Cheng Yi; Wu, Jong Ching ; Horng, Lance.

In: Journal of Magnetism and Magnetic Materials, Vol. 310, No. 2 SUPPL. PART 3, 01.03.2007, p. 1920-1922.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Repair effect on patterned CoFeB-based magnetic tunneling junction using rapid thermal annealing

AU - Wu, Kuo Ming

AU - Wang, Yung Hung

AU - Chen, Wei Chuan

AU - Yang, Shan Yi

AU - Shen, Kuei Hung

AU - Kao, Ming Jer

AU - Tsai, Ming Jinn

AU - Kuo, Cheng Yi

AU - Wu, Jong Ching

AU - Horng, Lance

PY - 2007/3/1

Y1 - 2007/3/1

N2 - Rapid thermal treatment without applying magnetic field reconstructing magnetic property of Co60Fe20B20 was studied through magnetoresistance (R-H) measurement. In this paper, we report that the switching behaviors of CoFeB were obviously improved through rapid thermal annealing for only a brief 5 min. The squareness and reproduction of minor R-H loops were enhanced from 100 °C to 250 °C. Tunneling magnetoresistance (TMR) that is about 35% in the as-etched cells increases up to 44% after 250 °C rapid annealing and still shows about 25% TMR even after 400 °C treating. Therefore, repair purpose annealing is some what different from crystallizing purpose annealing. Applying magnetic field during repair annealing was not necessary. Brief thermal treatment improves CoFeB switching behavior indeed, and causes less damage at high temperature.

AB - Rapid thermal treatment without applying magnetic field reconstructing magnetic property of Co60Fe20B20 was studied through magnetoresistance (R-H) measurement. In this paper, we report that the switching behaviors of CoFeB were obviously improved through rapid thermal annealing for only a brief 5 min. The squareness and reproduction of minor R-H loops were enhanced from 100 °C to 250 °C. Tunneling magnetoresistance (TMR) that is about 35% in the as-etched cells increases up to 44% after 250 °C rapid annealing and still shows about 25% TMR even after 400 °C treating. Therefore, repair purpose annealing is some what different from crystallizing purpose annealing. Applying magnetic field during repair annealing was not necessary. Brief thermal treatment improves CoFeB switching behavior indeed, and causes less damage at high temperature.

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