Repair effect on patterned CoFeB-based magnetic tunneling junction using rapid thermal annealing

Kuo Ming Wu, Yung Hung Wang, Wei Chuan Chen, Shan Yi Yang, Kuei Hung Shen, Ming Jer Kao, Ming Jinn Tsai, Cheng Yi Kuo, Jong Ching Wu, Lance Horng

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Abstract

Rapid thermal treatment without applying magnetic field reconstructing magnetic property of Co60Fe20B20 was studied through magnetoresistance (R-H) measurement. In this paper, we report that the switching behaviors of CoFeB were obviously improved through rapid thermal annealing for only a brief 5 min. The squareness and reproduction of minor R-H loops were enhanced from 100 °C to 250 °C. Tunneling magnetoresistance (TMR) that is about 35% in the as-etched cells increases up to 44% after 250 °C rapid annealing and still shows about 25% TMR even after 400 °C treating. Therefore, repair purpose annealing is some what different from crystallizing purpose annealing. Applying magnetic field during repair annealing was not necessary. Brief thermal treatment improves CoFeB switching behavior indeed, and causes less damage at high temperature.

Original languageEnglish
Pages (from-to)1920-1922
Number of pages3
JournalJournal of Magnetism and Magnetic Materials
Volume310
Issue number2 SUPPL. PART 3
DOIs
Publication statusPublished - 2007 Mar 1

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Wu, K. M., Wang, Y. H., Chen, W. C., Yang, S. Y., Shen, K. H., Kao, M. J., Tsai, M. J., Kuo, C. Y., Wu, J. C., & Horng, L. (2007). Repair effect on patterned CoFeB-based magnetic tunneling junction using rapid thermal annealing. Journal of Magnetism and Magnetic Materials, 310(2 SUPPL. PART 3), 1920-1922. https://doi.org/10.1016/j.jmmm.2006.10.605