Abstract
Rapid thermal treatment without applying magnetic field reconstructing magnetic property of Co60Fe20B20 was studied through magnetoresistance (R-H) measurement. In this paper, we report that the switching behaviors of CoFeB were obviously improved through rapid thermal annealing for only a brief 5 min. The squareness and reproduction of minor R-H loops were enhanced from 100 °C to 250 °C. Tunneling magnetoresistance (TMR) that is about 35% in the as-etched cells increases up to 44% after 250 °C rapid annealing and still shows about 25% TMR even after 400 °C treating. Therefore, repair purpose annealing is some what different from crystallizing purpose annealing. Applying magnetic field during repair annealing was not necessary. Brief thermal treatment improves CoFeB switching behavior indeed, and causes less damage at high temperature.
| Original language | English |
|---|---|
| Pages (from-to) | 1920-1922 |
| Number of pages | 3 |
| Journal | Journal of Magnetism and Magnetic Materials |
| Volume | 310 |
| Issue number | 2 SUPPL. PART 3 |
| DOIs | |
| Publication status | Published - 2007 Mar 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
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Repair effect on patterned CoFeB-based magnetic tunneling junction using rapid thermal annealing. / Wu, Kuo Ming; Wang, Yung Hung; Chen, Wei Chuan; Yang, Shan Yi; Shen, Kuei Hung; Kao, Ming Jer; Tsai, Ming Jinn; Kuo, Cheng Yi; Wu, Jong-Ching; Horng, Lance.
In: Journal of Magnetism and Magnetic Materials, Vol. 310, No. 2 SUPPL. PART 3, 01.03.2007, p. 1920-1922.Research output: Contribution to journal › Article
TY - JOUR
T1 - Repair effect on patterned CoFeB-based magnetic tunneling junction using rapid thermal annealing
AU - Wu, Kuo Ming
AU - Wang, Yung Hung
AU - Chen, Wei Chuan
AU - Yang, Shan Yi
AU - Shen, Kuei Hung
AU - Kao, Ming Jer
AU - Tsai, Ming Jinn
AU - Kuo, Cheng Yi
AU - Wu, Jong-Ching
AU - Horng, Lance
PY - 2007/3/1
Y1 - 2007/3/1
N2 - Rapid thermal treatment without applying magnetic field reconstructing magnetic property of Co60Fe20B20 was studied through magnetoresistance (R-H) measurement. In this paper, we report that the switching behaviors of CoFeB were obviously improved through rapid thermal annealing for only a brief 5 min. The squareness and reproduction of minor R-H loops were enhanced from 100 °C to 250 °C. Tunneling magnetoresistance (TMR) that is about 35% in the as-etched cells increases up to 44% after 250 °C rapid annealing and still shows about 25% TMR even after 400 °C treating. Therefore, repair purpose annealing is some what different from crystallizing purpose annealing. Applying magnetic field during repair annealing was not necessary. Brief thermal treatment improves CoFeB switching behavior indeed, and causes less damage at high temperature.
AB - Rapid thermal treatment without applying magnetic field reconstructing magnetic property of Co60Fe20B20 was studied through magnetoresistance (R-H) measurement. In this paper, we report that the switching behaviors of CoFeB were obviously improved through rapid thermal annealing for only a brief 5 min. The squareness and reproduction of minor R-H loops were enhanced from 100 °C to 250 °C. Tunneling magnetoresistance (TMR) that is about 35% in the as-etched cells increases up to 44% after 250 °C rapid annealing and still shows about 25% TMR even after 400 °C treating. Therefore, repair purpose annealing is some what different from crystallizing purpose annealing. Applying magnetic field during repair annealing was not necessary. Brief thermal treatment improves CoFeB switching behavior indeed, and causes less damage at high temperature.
UR - http://www.scopus.com/inward/record.url?scp=33847622442&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33847622442&partnerID=8YFLogxK
U2 - 10.1016/j.jmmm.2006.10.605
DO - 10.1016/j.jmmm.2006.10.605
M3 - Article
AN - SCOPUS:33847622442
VL - 310
SP - 1920
EP - 1922
JO - Journal of Magnetism and Magnetic Materials
JF - Journal of Magnetism and Magnetic Materials
SN - 0304-8853
IS - 2 SUPPL. PART 3
ER -