Repair effect on patterned CoFeB-based magnetic tunneling junction using rapid thermal annealing

Kuo Ming Wu, Yung Hung Wang, Wei Chuan Chen, Shan Yi Yang, Kuei Hung Shen, Ming Jer Kao, Ming Jinn Tsai, Cheng Yi Kuo, Jong-Ching Wu, Lance Horng

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Rapid thermal treatment without applying magnetic field reconstructing magnetic property of Co60Fe20B20 was studied through magnetoresistance (R-H) measurement. In this paper, we report that the switching behaviors of CoFeB were obviously improved through rapid thermal annealing for only a brief 5 min. The squareness and reproduction of minor R-H loops were enhanced from 100 °C to 250 °C. Tunneling magnetoresistance (TMR) that is about 35% in the as-etched cells increases up to 44% after 250 °C rapid annealing and still shows about 25% TMR even after 400 °C treating. Therefore, repair purpose annealing is some what different from crystallizing purpose annealing. Applying magnetic field during repair annealing was not necessary. Brief thermal treatment improves CoFeB switching behavior indeed, and causes less damage at high temperature.

Original languageEnglish
Pages (from-to)1920-1922
Number of pages3
JournalJournal of Magnetism and Magnetic Materials
Volume310
Issue number2 SUPPL. PART 3
DOIs
Publication statusPublished - 2007 Mar 1

Fingerprint

Rapid thermal annealing
Repair
Tunnelling magnetoresistance
Annealing
annealing
Heat treatment
Magnetic fields
Magnetoresistance
Magnetic properties
magnetic fields
magnetic properties
damage
causes
cells
Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Wu, Kuo Ming ; Wang, Yung Hung ; Chen, Wei Chuan ; Yang, Shan Yi ; Shen, Kuei Hung ; Kao, Ming Jer ; Tsai, Ming Jinn ; Kuo, Cheng Yi ; Wu, Jong-Ching ; Horng, Lance. / Repair effect on patterned CoFeB-based magnetic tunneling junction using rapid thermal annealing. In: Journal of Magnetism and Magnetic Materials. 2007 ; Vol. 310, No. 2 SUPPL. PART 3. pp. 1920-1922.
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abstract = "Rapid thermal treatment without applying magnetic field reconstructing magnetic property of Co60Fe20B20 was studied through magnetoresistance (R-H) measurement. In this paper, we report that the switching behaviors of CoFeB were obviously improved through rapid thermal annealing for only a brief 5 min. The squareness and reproduction of minor R-H loops were enhanced from 100 °C to 250 °C. Tunneling magnetoresistance (TMR) that is about 35{\%} in the as-etched cells increases up to 44{\%} after 250 °C rapid annealing and still shows about 25{\%} TMR even after 400 °C treating. Therefore, repair purpose annealing is some what different from crystallizing purpose annealing. Applying magnetic field during repair annealing was not necessary. Brief thermal treatment improves CoFeB switching behavior indeed, and causes less damage at high temperature.",
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Repair effect on patterned CoFeB-based magnetic tunneling junction using rapid thermal annealing. / Wu, Kuo Ming; Wang, Yung Hung; Chen, Wei Chuan; Yang, Shan Yi; Shen, Kuei Hung; Kao, Ming Jer; Tsai, Ming Jinn; Kuo, Cheng Yi; Wu, Jong-Ching; Horng, Lance.

In: Journal of Magnetism and Magnetic Materials, Vol. 310, No. 2 SUPPL. PART 3, 01.03.2007, p. 1920-1922.

Research output: Contribution to journalArticle

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AU - Wu, Kuo Ming

AU - Wang, Yung Hung

AU - Chen, Wei Chuan

AU - Yang, Shan Yi

AU - Shen, Kuei Hung

AU - Kao, Ming Jer

AU - Tsai, Ming Jinn

AU - Kuo, Cheng Yi

AU - Wu, Jong-Ching

AU - Horng, Lance

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