Relaxation of pinned domains in patterned magnetic thin films

Te Ho Wu, J. C. Wu, Y. W. Huang, L. X. Ye, Bing Mau Chen, Han Ping D. Shieh

Research output: Contribution to journalConference article

Abstract

We have shown in previous papers that the magnetic domains could be pinned inside the artificially patterned hole arrays under suitable geometry aspect ratio. Nevertheless, we have found that if we reverse the magnetization directions through domain wall motion, the confined domains expand from smaller territory into larger territory for some samples. In addition, the pinned domains maintained the same moment's orientation after the domain expansion. The possible reason for the pinned domains to retain the same moment's orientation maybe those pinning holes that act as high anisotropy defects. Thus, domain wall motion was around the high anisotropy sites and only peeled away the domain in the land area while the enclosed domain of the hole area maintained the same orientation. Moreover, the feasible reason for the expansion domains is the coercive force, which is perpendicular to the side-walls and pinning the domains inside the holes, are relaxed and thus causing the domains growth. This phenomenon is called the relaxation of pinning domains.

Original languageEnglish
Pages (from-to)224-227
Number of pages4
JournalJournal of Magnetism and Magnetic Materials
Volume209
Issue number1-3
DOIs
Publication statusPublished - 2000 Feb
EventProceedings of the 1999 International Symposium on Advanced Magnetic Technologies (ISAMT'99) - Taipei, Taiwan
Duration: 1999 May 241999 May 25

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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