Reflectance and photoluminescence studies of InGaN/GaN multiple-quantum- well structures embedded in an asymmetric microcavity

D. Y. Lin, J. J. Shiu, C. F. Lin

Research output: Contribution to journalArticle

Abstract

Using reflectance (R) and photoluminescence (PL) measurements InGaN/GaN multiple-quantum-well (MQW) structures embedded in an asymmetric microcavity with different thickness of stacking pairs have been studied. The asymmetric microcavity structures are composed of a cavity sandwitched between the air/semiconductor interface and a mirror using distributed Bragg reflector (DBR). For the DBR with thinner A1N layers the high-reflectivity stop band locates at higher photon energy. The luminescence efficiency and the spectrum of InGaN/GaN multiple-quantum-well structures will be modified by the microcavity. A comparison of PL with R spectra shows that the emission efficiency can be enhanced by matching up the luminescence spectrum coming from the MQW and the high-reflectivity stop band. From the blue shift of the cavity modes as a function of incident angles the refractive index and cavity length can be determined. By measuring the PL spectra as a function of emission angle, it is found that the PL spectra were predominatly determined by microcavity resonances.

Original languageEnglish
Pages (from-to)1647-1651
Number of pages5
JournalPhysica Status Solidi (B) Basic Research
Volume243
Issue number7
DOIs
Publication statusPublished - 2006 Jun 1

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Microcavities
Semiconductor quantum wells
Photoluminescence
quantum wells
reflectance
photoluminescence
Distributed Bragg reflectors
Luminescence
Bragg reflectors
cavities
luminescence
Refractive index
Mirrors
blue shift
Photons
Semiconductor materials
refractivity
mirrors
Air
air

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

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title = "Reflectance and photoluminescence studies of InGaN/GaN multiple-quantum- well structures embedded in an asymmetric microcavity",
abstract = "Using reflectance (R) and photoluminescence (PL) measurements InGaN/GaN multiple-quantum-well (MQW) structures embedded in an asymmetric microcavity with different thickness of stacking pairs have been studied. The asymmetric microcavity structures are composed of a cavity sandwitched between the air/semiconductor interface and a mirror using distributed Bragg reflector (DBR). For the DBR with thinner A1N layers the high-reflectivity stop band locates at higher photon energy. The luminescence efficiency and the spectrum of InGaN/GaN multiple-quantum-well structures will be modified by the microcavity. A comparison of PL with R spectra shows that the emission efficiency can be enhanced by matching up the luminescence spectrum coming from the MQW and the high-reflectivity stop band. From the blue shift of the cavity modes as a function of incident angles the refractive index and cavity length can be determined. By measuring the PL spectra as a function of emission angle, it is found that the PL spectra were predominatly determined by microcavity resonances.",
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Reflectance and photoluminescence studies of InGaN/GaN multiple-quantum- well structures embedded in an asymmetric microcavity. / Lin, D. Y.; Shiu, J. J.; Lin, C. F.

In: Physica Status Solidi (B) Basic Research, Vol. 243, No. 7, 01.06.2006, p. 1647-1651.

Research output: Contribution to journalArticle

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