Reduction of stacking fault density in m -plane GaN grown on SiC

Y. S. Cho, Q. Sun, I. H. Lee, T. S. Ko, C. D. Yerino, J. Han, B. H. Kong, H. K. Cho, S. Wang

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52 Citations (Scopus)


We report the reduction in basal-plane stacking faults (BSFs) in m -plane GaN grown on m -plane SiC. The origin of BSFs is linked to heteronucleation of m -plane GaN and the presence of N-face basal-plane sidewalls of three-dimensional islands. Graded AlGaN layers help to alleviate mismatched nucleation and the generation of BSFs. Transmission electron microscopy shows that the density of BSFs is decreased to the low 105 cm-1. Anisotropy in on-axis x-ray rocking curves, a salient feature in m -plane GaN heteroepitaxial layers, is greatly reduced. A possible mechanism of BSF generation, and the demonstration of improved InGaNGaN quantum well emission are presented.

Original languageEnglish
Article number111904
JournalApplied Physics Letters
Issue number11
Publication statusPublished - 2008

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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