Reduced efficiency droop in blue InGaN light-emitting diodes by thin AlGaN barriers

Jih-Yuan Chang, Yi An Chang, Tsun Hsin Wang, Fang Ming Chen, Bo Ting Liou, Yen-Kuang Kuo

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

The phenomenon of efficiency droop in blue InGaN light-emitting diodes (LEDs) is studied numerically. Simulation results indicate that the severe Auger recombination is one critical mechanism corresponding to the degraded efficiency under high current injection. To solve this issue, LED structure with thin AlGaN barriers and without the use of an AlGaN EBL is proposed. The purpose of the strain-compensation AlGaN barriers is to mitigate the strain accumulation in a multiquantum well (MQW) active region in this thin-barrier structure. With the proposed LED structure, the hole injection and transportation of the MQWactive region are largely improved. The carriers can thus distribute/disperse much more uniformly in QWs, and the Auger recombination is suppressed accordingly. The internal quantum efficiency and the efficiency droop are therefore efficiently improved.

Original languageEnglish
Pages (from-to)497-500
Number of pages4
JournalOptics Letters
Volume39
Issue number3
DOIs
Publication statusPublished - 2014 Feb 1

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light emitting diodes
injection
high current
quantum efficiency
simulation

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

Cite this

Chang, Jih-Yuan ; Chang, Yi An ; Wang, Tsun Hsin ; Chen, Fang Ming ; Liou, Bo Ting ; Kuo, Yen-Kuang. / Reduced efficiency droop in blue InGaN light-emitting diodes by thin AlGaN barriers. In: Optics Letters. 2014 ; Vol. 39, No. 3. pp. 497-500.
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Reduced efficiency droop in blue InGaN light-emitting diodes by thin AlGaN barriers. / Chang, Jih-Yuan; Chang, Yi An; Wang, Tsun Hsin; Chen, Fang Ming; Liou, Bo Ting; Kuo, Yen-Kuang.

In: Optics Letters, Vol. 39, No. 3, 01.02.2014, p. 497-500.

Research output: Contribution to journalArticle

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