Abstract
The effect of Si-nanowire (SiNW) sulfidation on electronic transport of heterojunction diodes based on the p-type tin(II) sulfide (SnS) and n-type Si with SiNW arrays was investigated in this study. The p-type SnS/SiNWs/n-type Si diode without SiNW sulfidation shows a poor rectifying behavior with an ideality factor (η) of 3.7 and high leakage. However, the p-type SnS/SiNWs/n-type Si diode with SiNW sulfidation shows a good rectifying behavior with η of 1.8 and low leakage. Such an improvement indicates that a good passivation is formed at the interface as a result of the formation of Si-S bonds. Therefore, the increased photocurrent density can be interpreted by the device rectifying performance and interface passivation.
| Original language | English |
|---|---|
| Pages (from-to) | 62-67 |
| Number of pages | 6 |
| Journal | Materials Science in Semiconductor Processing |
| Volume | 32 |
| DOIs | |
| Publication status | Published - 2015 Apr |
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
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Ruan, C. H., Lin, Y. J., Chen, Y. H., & Chang, H. C. (2015). Rectifying performance of p-type tin(II) sulfide contacts on n-type silicon: Effect of silicon nanowire sulfidation on electronic transport of heterojunction diodes. Materials Science in Semiconductor Processing, 32, 62-67. https://doi.org/10.1016/j.mssp.2015.01.005