Rectifying performance of p-type tin(II) sulfide contacts on n-type silicon: Effect of silicon nanowire sulfidation on electronic transport of heterojunction diodes

Cheng He Ruan, Yow-Jon Lin, Ya Hui Chen, Hsing Cheng Chang

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The effect of Si-nanowire (SiNW) sulfidation on electronic transport of heterojunction diodes based on the p-type tin(II) sulfide (SnS) and n-type Si with SiNW arrays was investigated in this study. The p-type SnS/SiNWs/n-type Si diode without SiNW sulfidation shows a poor rectifying behavior with an ideality factor (η) of 3.7 and high leakage. However, the p-type SnS/SiNWs/n-type Si diode with SiNW sulfidation shows a good rectifying behavior with η of 1.8 and low leakage. Such an improvement indicates that a good passivation is formed at the interface as a result of the formation of Si-S bonds. Therefore, the increased photocurrent density can be interpreted by the device rectifying performance and interface passivation.

Original languageEnglish
Pages (from-to)62-67
Number of pages6
JournalMaterials Science in Semiconductor Processing
Volume32
DOIs
Publication statusPublished - 2015 Jan 1

Fingerprint

sulfidation
Tin
Sulfides
Silicon
Nanowires
Heterojunctions
sulfides
heterojunctions
tin
Diodes
nanowires
diodes
silicon
electronics
Passivation
passivity
leakage
Photocurrents
photocurrents

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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title = "Rectifying performance of p-type tin(II) sulfide contacts on n-type silicon: Effect of silicon nanowire sulfidation on electronic transport of heterojunction diodes",
abstract = "The effect of Si-nanowire (SiNW) sulfidation on electronic transport of heterojunction diodes based on the p-type tin(II) sulfide (SnS) and n-type Si with SiNW arrays was investigated in this study. The p-type SnS/SiNWs/n-type Si diode without SiNW sulfidation shows a poor rectifying behavior with an ideality factor (η) of 3.7 and high leakage. However, the p-type SnS/SiNWs/n-type Si diode with SiNW sulfidation shows a good rectifying behavior with η of 1.8 and low leakage. Such an improvement indicates that a good passivation is formed at the interface as a result of the formation of Si-S bonds. Therefore, the increased photocurrent density can be interpreted by the device rectifying performance and interface passivation.",
author = "Ruan, {Cheng He} and Yow-Jon Lin and Chen, {Ya Hui} and Chang, {Hsing Cheng}",
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T1 - Rectifying performance of p-type tin(II) sulfide contacts on n-type silicon

T2 - Effect of silicon nanowire sulfidation on electronic transport of heterojunction diodes

AU - Ruan, Cheng He

AU - Lin, Yow-Jon

AU - Chen, Ya Hui

AU - Chang, Hsing Cheng

PY - 2015/1/1

Y1 - 2015/1/1

N2 - The effect of Si-nanowire (SiNW) sulfidation on electronic transport of heterojunction diodes based on the p-type tin(II) sulfide (SnS) and n-type Si with SiNW arrays was investigated in this study. The p-type SnS/SiNWs/n-type Si diode without SiNW sulfidation shows a poor rectifying behavior with an ideality factor (η) of 3.7 and high leakage. However, the p-type SnS/SiNWs/n-type Si diode with SiNW sulfidation shows a good rectifying behavior with η of 1.8 and low leakage. Such an improvement indicates that a good passivation is formed at the interface as a result of the formation of Si-S bonds. Therefore, the increased photocurrent density can be interpreted by the device rectifying performance and interface passivation.

AB - The effect of Si-nanowire (SiNW) sulfidation on electronic transport of heterojunction diodes based on the p-type tin(II) sulfide (SnS) and n-type Si with SiNW arrays was investigated in this study. The p-type SnS/SiNWs/n-type Si diode without SiNW sulfidation shows a poor rectifying behavior with an ideality factor (η) of 3.7 and high leakage. However, the p-type SnS/SiNWs/n-type Si diode with SiNW sulfidation shows a good rectifying behavior with η of 1.8 and low leakage. Such an improvement indicates that a good passivation is formed at the interface as a result of the formation of Si-S bonds. Therefore, the increased photocurrent density can be interpreted by the device rectifying performance and interface passivation.

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