Rectifying performance of p-type tin(II) sulfide contacts on n-type silicon: Effect of silicon nanowire sulfidation on electronic transport of heterojunction diodes

Cheng He Ruan; Yow Jon Lin; Ya Hui Chen; Hsing Cheng Chang

doi:10.1016/j.mssp.2015.01.005

Rectifying performance of p-type tin(II) sulfide contacts on n-type silicon: Effect of silicon nanowire sulfidation on electronic transport of heterojunction diodes

Cheng He Ruan, Yow Jon Lin, Ya Hui Chen, Hsing Cheng Chang

Graduate Institute of Photonics

Research output: Contribution to journal › Article

6 Citations (Scopus)

Abstract

The effect of Si-nanowire (SiNW) sulfidation on electronic transport of heterojunction diodes based on the p-type tin(II) sulfide (SnS) and n-type Si with SiNW arrays was investigated in this study. The p-type SnS/SiNWs/n-type Si diode without SiNW sulfidation shows a poor rectifying behavior with an ideality factor (η) of 3.7 and high leakage. However, the p-type SnS/SiNWs/n-type Si diode with SiNW sulfidation shows a good rectifying behavior with η of 1.8 and low leakage. Such an improvement indicates that a good passivation is formed at the interface as a result of the formation of Si-S bonds. Therefore, the increased photocurrent density can be interpreted by the device rectifying performance and interface passivation.

Original language	English
Pages (from-to)	62-67
Number of pages	6
Journal	Materials Science in Semiconductor Processing
Volume	32
DOIs	https://doi.org/10.1016/j.mssp.2015.01.005
Publication status	Published - 2015 Apr

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All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

Ruan, C. H., Lin, Y. J., Chen, Y. H., & Chang, H. C. (2015). Rectifying performance of p-type tin(II) sulfide contacts on n-type silicon: Effect of silicon nanowire sulfidation on electronic transport of heterojunction diodes. Materials Science in Semiconductor Processing, 32, 62-67. https://doi.org/10.1016/j.mssp.2015.01.005

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abstract = "The effect of Si-nanowire (SiNW) sulfidation on electronic transport of heterojunction diodes based on the p-type tin(II) sulfide (SnS) and n-type Si with SiNW arrays was investigated in this study. The p-type SnS/SiNWs/n-type Si diode without SiNW sulfidation shows a poor rectifying behavior with an ideality factor (η) of 3.7 and high leakage. However, the p-type SnS/SiNWs/n-type Si diode with SiNW sulfidation shows a good rectifying behavior with η of 1.8 and low leakage. Such an improvement indicates that a good passivation is formed at the interface as a result of the formation of Si-S bonds. Therefore, the increased photocurrent density can be interpreted by the device rectifying performance and interface passivation.",

author = "Ruan, {Cheng He} and Lin, {Yow Jon} and Chen, {Ya Hui} and Chang, {Hsing Cheng}",

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T2 - Effect of silicon nanowire sulfidation on electronic transport of heterojunction diodes

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AU - Lin, Yow Jon

AU - Chen, Ya Hui

AU - Chang, Hsing Cheng

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N2 - The effect of Si-nanowire (SiNW) sulfidation on electronic transport of heterojunction diodes based on the p-type tin(II) sulfide (SnS) and n-type Si with SiNW arrays was investigated in this study. The p-type SnS/SiNWs/n-type Si diode without SiNW sulfidation shows a poor rectifying behavior with an ideality factor (η) of 3.7 and high leakage. However, the p-type SnS/SiNWs/n-type Si diode with SiNW sulfidation shows a good rectifying behavior with η of 1.8 and low leakage. Such an improvement indicates that a good passivation is formed at the interface as a result of the formation of Si-S bonds. Therefore, the increased photocurrent density can be interpreted by the device rectifying performance and interface passivation.

AB - The effect of Si-nanowire (SiNW) sulfidation on electronic transport of heterojunction diodes based on the p-type tin(II) sulfide (SnS) and n-type Si with SiNW arrays was investigated in this study. The p-type SnS/SiNWs/n-type Si diode without SiNW sulfidation shows a poor rectifying behavior with an ideality factor (η) of 3.7 and high leakage. However, the p-type SnS/SiNWs/n-type Si diode with SiNW sulfidation shows a good rectifying behavior with η of 1.8 and low leakage. Such an improvement indicates that a good passivation is formed at the interface as a result of the formation of Si-S bonds. Therefore, the increased photocurrent density can be interpreted by the device rectifying performance and interface passivation.

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10.1016/j.mssp.2015.01.005