TY - JOUR
T1 - Rectifying performance of p-type tin(II) sulfide contacts on n-type silicon
T2 - Effect of silicon nanowire sulfidation on electronic transport of heterojunction diodes
AU - Ruan, Cheng He
AU - Lin, Yow Jon
AU - Chen, Ya Hui
AU - Chang, Hsing Cheng
PY - 2015/4
Y1 - 2015/4
N2 - The effect of Si-nanowire (SiNW) sulfidation on electronic transport of heterojunction diodes based on the p-type tin(II) sulfide (SnS) and n-type Si with SiNW arrays was investigated in this study. The p-type SnS/SiNWs/n-type Si diode without SiNW sulfidation shows a poor rectifying behavior with an ideality factor (η) of 3.7 and high leakage. However, the p-type SnS/SiNWs/n-type Si diode with SiNW sulfidation shows a good rectifying behavior with η of 1.8 and low leakage. Such an improvement indicates that a good passivation is formed at the interface as a result of the formation of Si-S bonds. Therefore, the increased photocurrent density can be interpreted by the device rectifying performance and interface passivation.
AB - The effect of Si-nanowire (SiNW) sulfidation on electronic transport of heterojunction diodes based on the p-type tin(II) sulfide (SnS) and n-type Si with SiNW arrays was investigated in this study. The p-type SnS/SiNWs/n-type Si diode without SiNW sulfidation shows a poor rectifying behavior with an ideality factor (η) of 3.7 and high leakage. However, the p-type SnS/SiNWs/n-type Si diode with SiNW sulfidation shows a good rectifying behavior with η of 1.8 and low leakage. Such an improvement indicates that a good passivation is formed at the interface as a result of the formation of Si-S bonds. Therefore, the increased photocurrent density can be interpreted by the device rectifying performance and interface passivation.
UR - http://www.scopus.com/inward/record.url?scp=84921664635&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84921664635&partnerID=8YFLogxK
U2 - 10.1016/j.mssp.2015.01.005
DO - 10.1016/j.mssp.2015.01.005
M3 - Article
AN - SCOPUS:84921664635
VL - 32
SP - 62
EP - 67
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
SN - 1369-8001
ER -