Abstract
The effect of Si-nanowire (SiNW) sulfidation on electronic transport of heterojunction diodes based on the p-type tin(II) sulfide (SnS) and n-type Si with SiNW arrays was investigated in this study. The p-type SnS/SiNWs/n-type Si diode without SiNW sulfidation shows a poor rectifying behavior with an ideality factor (η) of 3.7 and high leakage. However, the p-type SnS/SiNWs/n-type Si diode with SiNW sulfidation shows a good rectifying behavior with η of 1.8 and low leakage. Such an improvement indicates that a good passivation is formed at the interface as a result of the formation of Si-S bonds. Therefore, the increased photocurrent density can be interpreted by the device rectifying performance and interface passivation.
| Original language | English |
|---|---|
| Pages (from-to) | 62-67 |
| Number of pages | 6 |
| Journal | Materials Science in Semiconductor Processing |
| Volume | 32 |
| DOIs | |
| Publication status | Published - 2015 Jan 1 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
Cite this
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Rectifying performance of p-type tin(II) sulfide contacts on n-type silicon : Effect of silicon nanowire sulfidation on electronic transport of heterojunction diodes. / Ruan, Cheng He; Lin, Yow-Jon; Chen, Ya Hui; Chang, Hsing Cheng.
In: Materials Science in Semiconductor Processing, Vol. 32, 01.01.2015, p. 62-67.Research output: Contribution to journal › Article
TY - JOUR
T1 - Rectifying performance of p-type tin(II) sulfide contacts on n-type silicon
T2 - Effect of silicon nanowire sulfidation on electronic transport of heterojunction diodes
AU - Ruan, Cheng He
AU - Lin, Yow-Jon
AU - Chen, Ya Hui
AU - Chang, Hsing Cheng
PY - 2015/1/1
Y1 - 2015/1/1
N2 - The effect of Si-nanowire (SiNW) sulfidation on electronic transport of heterojunction diodes based on the p-type tin(II) sulfide (SnS) and n-type Si with SiNW arrays was investigated in this study. The p-type SnS/SiNWs/n-type Si diode without SiNW sulfidation shows a poor rectifying behavior with an ideality factor (η) of 3.7 and high leakage. However, the p-type SnS/SiNWs/n-type Si diode with SiNW sulfidation shows a good rectifying behavior with η of 1.8 and low leakage. Such an improvement indicates that a good passivation is formed at the interface as a result of the formation of Si-S bonds. Therefore, the increased photocurrent density can be interpreted by the device rectifying performance and interface passivation.
AB - The effect of Si-nanowire (SiNW) sulfidation on electronic transport of heterojunction diodes based on the p-type tin(II) sulfide (SnS) and n-type Si with SiNW arrays was investigated in this study. The p-type SnS/SiNWs/n-type Si diode without SiNW sulfidation shows a poor rectifying behavior with an ideality factor (η) of 3.7 and high leakage. However, the p-type SnS/SiNWs/n-type Si diode with SiNW sulfidation shows a good rectifying behavior with η of 1.8 and low leakage. Such an improvement indicates that a good passivation is formed at the interface as a result of the formation of Si-S bonds. Therefore, the increased photocurrent density can be interpreted by the device rectifying performance and interface passivation.
UR - http://www.scopus.com/inward/record.url?scp=84921664635&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84921664635&partnerID=8YFLogxK
U2 - 10.1016/j.mssp.2015.01.005
DO - 10.1016/j.mssp.2015.01.005
M3 - Article
AN - SCOPUS:84921664635
VL - 32
SP - 62
EP - 67
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
SN - 1369-8001
ER -