Reconfiguring crystal and electronic structures of MoS2 by substitutional doping

Joonki Suh, Teck Leong Tan, Weijie Zhao, Joonsuk Park, Der Yuh Lin, Tae Eon Park, Jonghwan Kim, Chenhao Jin, Nihit Saigal, Sandip Ghosh, Zicong Marvin Wong, Yabin Chen, Feng Wang, Wladyslaw Walukiewicz, Goki Eda, Junqiao Wu

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

Doping of traditional semiconductors has enabled technological applications in modern electronics by tailoring their chemical, optical and electronic properties. However, substitutional doping in two-dimensional semiconductors is at a comparatively early stage, and the resultant effects are less explored. In this work, we report unusual effects of degenerate doping with Nb on structural, electronic and optical characteristics of MoS2 crystals. The doping readily induces a structural transformation from naturally occurring 2H stacking to 3R stacking. Electronically, a strong interaction of the Nb impurity states with the host valence bands drastically and nonlinearly modifies the electronic band structure with the valence band maximum of multilayer MoS2 at the Γ point pushed upward by hybridization with the Nb states. When thinned down to monolayers, in stark contrast, such significant nonlinear effect vanishes, instead resulting in strong and broadband photoluminescence via the formation of exciton complexes tightly bound to neutral acceptors.

Original languageEnglish
Article number199
JournalNature Communications
Volume9
Issue number1
DOIs
Publication statusPublished - 2018 Dec 1

Fingerprint

Semiconductors
Electronic structure
Crystal structure
Doping (additives)
electronic structure
crystal structure
Valence bands
electronics
Semiconductor materials
valence
chemical properties
Electronic properties
Band structure
Chemical properties
Monolayers
Photoluminescence
Multilayers
Electronic equipment
Optical properties
excitons

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Biochemistry, Genetics and Molecular Biology(all)
  • Physics and Astronomy(all)

Cite this

Suh, Joonki ; Tan, Teck Leong ; Zhao, Weijie ; Park, Joonsuk ; Lin, Der Yuh ; Park, Tae Eon ; Kim, Jonghwan ; Jin, Chenhao ; Saigal, Nihit ; Ghosh, Sandip ; Wong, Zicong Marvin ; Chen, Yabin ; Wang, Feng ; Walukiewicz, Wladyslaw ; Eda, Goki ; Wu, Junqiao. / Reconfiguring crystal and electronic structures of MoS2 by substitutional doping. In: Nature Communications. 2018 ; Vol. 9, No. 1.
@article{48ff17cd92494443a9a12d1cd5d6ec00,
title = "Reconfiguring crystal and electronic structures of MoS2 by substitutional doping",
abstract = "Doping of traditional semiconductors has enabled technological applications in modern electronics by tailoring their chemical, optical and electronic properties. However, substitutional doping in two-dimensional semiconductors is at a comparatively early stage, and the resultant effects are less explored. In this work, we report unusual effects of degenerate doping with Nb on structural, electronic and optical characteristics of MoS2 crystals. The doping readily induces a structural transformation from naturally occurring 2H stacking to 3R stacking. Electronically, a strong interaction of the Nb impurity states with the host valence bands drastically and nonlinearly modifies the electronic band structure with the valence band maximum of multilayer MoS2 at the Γ point pushed upward by hybridization with the Nb states. When thinned down to monolayers, in stark contrast, such significant nonlinear effect vanishes, instead resulting in strong and broadband photoluminescence via the formation of exciton complexes tightly bound to neutral acceptors.",
author = "Joonki Suh and Tan, {Teck Leong} and Weijie Zhao and Joonsuk Park and Lin, {Der Yuh} and Park, {Tae Eon} and Jonghwan Kim and Chenhao Jin and Nihit Saigal and Sandip Ghosh and Wong, {Zicong Marvin} and Yabin Chen and Feng Wang and Wladyslaw Walukiewicz and Goki Eda and Junqiao Wu",
year = "2018",
month = "12",
day = "1",
doi = "10.1038/s41467-017-02631-9",
language = "English",
volume = "9",
journal = "Nature Communications",
issn = "2041-1723",
publisher = "Nature Publishing Group",
number = "1",

}

Suh, J, Tan, TL, Zhao, W, Park, J, Lin, DY, Park, TE, Kim, J, Jin, C, Saigal, N, Ghosh, S, Wong, ZM, Chen, Y, Wang, F, Walukiewicz, W, Eda, G & Wu, J 2018, 'Reconfiguring crystal and electronic structures of MoS2 by substitutional doping', Nature Communications, vol. 9, no. 1, 199. https://doi.org/10.1038/s41467-017-02631-9

Reconfiguring crystal and electronic structures of MoS2 by substitutional doping. / Suh, Joonki; Tan, Teck Leong; Zhao, Weijie; Park, Joonsuk; Lin, Der Yuh; Park, Tae Eon; Kim, Jonghwan; Jin, Chenhao; Saigal, Nihit; Ghosh, Sandip; Wong, Zicong Marvin; Chen, Yabin; Wang, Feng; Walukiewicz, Wladyslaw; Eda, Goki; Wu, Junqiao.

In: Nature Communications, Vol. 9, No. 1, 199, 01.12.2018.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Reconfiguring crystal and electronic structures of MoS2 by substitutional doping

AU - Suh, Joonki

AU - Tan, Teck Leong

AU - Zhao, Weijie

AU - Park, Joonsuk

AU - Lin, Der Yuh

AU - Park, Tae Eon

AU - Kim, Jonghwan

AU - Jin, Chenhao

AU - Saigal, Nihit

AU - Ghosh, Sandip

AU - Wong, Zicong Marvin

AU - Chen, Yabin

AU - Wang, Feng

AU - Walukiewicz, Wladyslaw

AU - Eda, Goki

AU - Wu, Junqiao

PY - 2018/12/1

Y1 - 2018/12/1

N2 - Doping of traditional semiconductors has enabled technological applications in modern electronics by tailoring their chemical, optical and electronic properties. However, substitutional doping in two-dimensional semiconductors is at a comparatively early stage, and the resultant effects are less explored. In this work, we report unusual effects of degenerate doping with Nb on structural, electronic and optical characteristics of MoS2 crystals. The doping readily induces a structural transformation from naturally occurring 2H stacking to 3R stacking. Electronically, a strong interaction of the Nb impurity states with the host valence bands drastically and nonlinearly modifies the electronic band structure with the valence band maximum of multilayer MoS2 at the Γ point pushed upward by hybridization with the Nb states. When thinned down to monolayers, in stark contrast, such significant nonlinear effect vanishes, instead resulting in strong and broadband photoluminescence via the formation of exciton complexes tightly bound to neutral acceptors.

AB - Doping of traditional semiconductors has enabled technological applications in modern electronics by tailoring their chemical, optical and electronic properties. However, substitutional doping in two-dimensional semiconductors is at a comparatively early stage, and the resultant effects are less explored. In this work, we report unusual effects of degenerate doping with Nb on structural, electronic and optical characteristics of MoS2 crystals. The doping readily induces a structural transformation from naturally occurring 2H stacking to 3R stacking. Electronically, a strong interaction of the Nb impurity states with the host valence bands drastically and nonlinearly modifies the electronic band structure with the valence band maximum of multilayer MoS2 at the Γ point pushed upward by hybridization with the Nb states. When thinned down to monolayers, in stark contrast, such significant nonlinear effect vanishes, instead resulting in strong and broadband photoluminescence via the formation of exciton complexes tightly bound to neutral acceptors.

UR - http://www.scopus.com/inward/record.url?scp=85040798061&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85040798061&partnerID=8YFLogxK

U2 - 10.1038/s41467-017-02631-9

DO - 10.1038/s41467-017-02631-9

M3 - Article

C2 - 29335411

AN - SCOPUS:85040798061

VL - 9

JO - Nature Communications

JF - Nature Communications

SN - 2041-1723

IS - 1

M1 - 199

ER -