Rapid fabrication and low-temperature transport properties of nanostructured p-type CexCo4Sb12.04 (x=0.15, 0.20 and 0.30) using solvothermal synthesis and evacuated-and-encapsulated heating

Ankam Bhaskar, Yao Wei Yang, Chia-Jyi Liu

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Polycrystalline p-type CexCo4Sb12.04 with x=0.15, 0.20 and 0.30 are fabricated using a combination of solvothermal synthesis at 260 °C for 24 h and evacuated-and-encapsulated heating at 600 °C for 5 h. The X-ray diffraction patterns reveal that all the compositions are of single phase. The thermopower of all the samples is positive, indicating that the predominant carriers are holes over the investigated temperature range of 80-300 K. The electrical resistivity and thermopower simultaneously decrease with increasing Ce filling content. Analyses of the temperature dependence of both electrical resistivity and thermopower indicate that all the samples obey the variable range hopping transport mechanism. Among the samples, Ce0.20Co4Sb12.04 exhibits the highest power factor of 0.29 μW cm-1 K-2 at 300 K. This value represents an improvement of about 556% compared to pristine Co4Sb12.04.

Original languageEnglish
Pages (from-to)6381-6385
Number of pages5
JournalCeramics International
Volume41
Issue number5
DOIs
Publication statusPublished - 2015 Jan 1

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Thermoelectric power
Transport properties
Heating
Fabrication
Temperature
Diffraction patterns
X ray diffraction
Chemical analysis

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

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title = "Rapid fabrication and low-temperature transport properties of nanostructured p-type CexCo4Sb12.04 (x=0.15, 0.20 and 0.30) using solvothermal synthesis and evacuated-and-encapsulated heating",
abstract = "Polycrystalline p-type CexCo4Sb12.04 with x=0.15, 0.20 and 0.30 are fabricated using a combination of solvothermal synthesis at 260 °C for 24 h and evacuated-and-encapsulated heating at 600 °C for 5 h. The X-ray diffraction patterns reveal that all the compositions are of single phase. The thermopower of all the samples is positive, indicating that the predominant carriers are holes over the investigated temperature range of 80-300 K. The electrical resistivity and thermopower simultaneously decrease with increasing Ce filling content. Analyses of the temperature dependence of both electrical resistivity and thermopower indicate that all the samples obey the variable range hopping transport mechanism. Among the samples, Ce0.20Co4Sb12.04 exhibits the highest power factor of 0.29 μW cm-1 K-2 at 300 K. This value represents an improvement of about 556{\%} compared to pristine Co4Sb12.04.",
author = "Ankam Bhaskar and Yang, {Yao Wei} and Chia-Jyi Liu",
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TY - JOUR

T1 - Rapid fabrication and low-temperature transport properties of nanostructured p-type CexCo4Sb12.04 (x=0.15, 0.20 and 0.30) using solvothermal synthesis and evacuated-and-encapsulated heating

AU - Bhaskar, Ankam

AU - Yang, Yao Wei

AU - Liu, Chia-Jyi

PY - 2015/1/1

Y1 - 2015/1/1

N2 - Polycrystalline p-type CexCo4Sb12.04 with x=0.15, 0.20 and 0.30 are fabricated using a combination of solvothermal synthesis at 260 °C for 24 h and evacuated-and-encapsulated heating at 600 °C for 5 h. The X-ray diffraction patterns reveal that all the compositions are of single phase. The thermopower of all the samples is positive, indicating that the predominant carriers are holes over the investigated temperature range of 80-300 K. The electrical resistivity and thermopower simultaneously decrease with increasing Ce filling content. Analyses of the temperature dependence of both electrical resistivity and thermopower indicate that all the samples obey the variable range hopping transport mechanism. Among the samples, Ce0.20Co4Sb12.04 exhibits the highest power factor of 0.29 μW cm-1 K-2 at 300 K. This value represents an improvement of about 556% compared to pristine Co4Sb12.04.

AB - Polycrystalline p-type CexCo4Sb12.04 with x=0.15, 0.20 and 0.30 are fabricated using a combination of solvothermal synthesis at 260 °C for 24 h and evacuated-and-encapsulated heating at 600 °C for 5 h. The X-ray diffraction patterns reveal that all the compositions are of single phase. The thermopower of all the samples is positive, indicating that the predominant carriers are holes over the investigated temperature range of 80-300 K. The electrical resistivity and thermopower simultaneously decrease with increasing Ce filling content. Analyses of the temperature dependence of both electrical resistivity and thermopower indicate that all the samples obey the variable range hopping transport mechanism. Among the samples, Ce0.20Co4Sb12.04 exhibits the highest power factor of 0.29 μW cm-1 K-2 at 300 K. This value represents an improvement of about 556% compared to pristine Co4Sb12.04.

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