Abstract
We report that the quasibound states at the above-barrier region in type-II ZnTe/CdSe superlattices can be clearly observed at room temperature by photoreflectance, contactless electroreflectance, as well as photoconductivity measurements. We provide concrete evidence to confirm that free-carrier confinement at barrier layer (either in the valence-band CdSe layer or in the conduction-band ZnTe layer) does exist. It is found that the barrier-width dependence of the above-barrier ground-state transition energies can be described well by the constructive interference condition. We also observe the absorptive spatially indirect transition between electrons confined in the CdSe and holes confined in the ZnTe layers.
| Original language | English |
|---|---|
| Article number | 195311 |
| Pages (from-to) | 1953111-1953115 |
| Number of pages | 5 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 64 |
| Issue number | 19 |
| Publication status | Published - 2001 Nov 15 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
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Quasibound states in type-II ZnTe/CdSe superlattices studied by modulation spectroscopies and photoconductivity at room temperature. / Tseng, S. M.; Chen, Y. F.; Cheng, Y. T.; Hsu, C. W.; Huang, Y. S.; Lin, Der-Yuh.
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 64, No. 19, 195311, 15.11.2001, p. 1953111-1953115.Research output: Contribution to journal › Article
TY - JOUR
T1 - Quasibound states in type-II ZnTe/CdSe superlattices studied by modulation spectroscopies and photoconductivity at room temperature
AU - Tseng, S. M.
AU - Chen, Y. F.
AU - Cheng, Y. T.
AU - Hsu, C. W.
AU - Huang, Y. S.
AU - Lin, Der-Yuh
PY - 2001/11/15
Y1 - 2001/11/15
N2 - We report that the quasibound states at the above-barrier region in type-II ZnTe/CdSe superlattices can be clearly observed at room temperature by photoreflectance, contactless electroreflectance, as well as photoconductivity measurements. We provide concrete evidence to confirm that free-carrier confinement at barrier layer (either in the valence-band CdSe layer or in the conduction-band ZnTe layer) does exist. It is found that the barrier-width dependence of the above-barrier ground-state transition energies can be described well by the constructive interference condition. We also observe the absorptive spatially indirect transition between electrons confined in the CdSe and holes confined in the ZnTe layers.
AB - We report that the quasibound states at the above-barrier region in type-II ZnTe/CdSe superlattices can be clearly observed at room temperature by photoreflectance, contactless electroreflectance, as well as photoconductivity measurements. We provide concrete evidence to confirm that free-carrier confinement at barrier layer (either in the valence-band CdSe layer or in the conduction-band ZnTe layer) does exist. It is found that the barrier-width dependence of the above-barrier ground-state transition energies can be described well by the constructive interference condition. We also observe the absorptive spatially indirect transition between electrons confined in the CdSe and holes confined in the ZnTe layers.
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M3 - Article
AN - SCOPUS:4243958362
VL - 64
SP - 1953111
EP - 1953115
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 1098-0121
IS - 19
M1 - 195311
ER -