Abstract
This study investigates the growth mode of highly lattice-mismatch (∼ 14 %) CdTe self-assembled quantum dots grown on a ZnSe buffer-layer by molecular beam epitaxy. Two growth processes were used to prepare the samples. For the group-I samples, Te and Cd sources were alternately used to deposit a CdTe coverage layer of 0.6 to 8.0 mono-layers on a Zn-stabilized ZnSe buffer layer. The growth process of group-II samples was reversed; that is, the Cd beam was supplied first on a Se-stabilized ZnSe buffer layer. The optical spectra, including the power-dependent, time-resolved photoluminescence (PL) and PL excitation measurement, demonstrate a ZnTe-like and a CdSe-like two-dimensional precursor layer (wetting layer) in the group-I and group-II samples, respectively. Following the formation of the precursor layer, three-dimensional highly strained CdTe quantum dots were formed. Accordingly, the growth of CdTe self-assembled quantum-dot structures was attributed to the quasi-Stranski-Krastanow mode.
| Original language | English |
|---|---|
| Pages (from-to) | 301-305 |
| Number of pages | 5 |
| Journal | Journal of Crystal Growth |
| Volume | 301-302 |
| Issue number | SPEC. ISS. |
| DOIs | |
| Publication status | Published - 2007 Apr 1 |
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All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry
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Quasi-Stranski-Krastanow growth mode of self-assembled CdTe quantum dots grown on ZnSe by molecular beam epitaxy. / Yang, C. S.; Lai, Y. J.; Chou, W. C.; Chen, D. S.; Wang, J. S.; Chien, K. F.; Shih, Yu-Tai.
In: Journal of Crystal Growth, Vol. 301-302, No. SPEC. ISS., 01.04.2007, p. 301-305.Research output: Contribution to journal › Article
TY - JOUR
T1 - Quasi-Stranski-Krastanow growth mode of self-assembled CdTe quantum dots grown on ZnSe by molecular beam epitaxy
AU - Yang, C. S.
AU - Lai, Y. J.
AU - Chou, W. C.
AU - Chen, D. S.
AU - Wang, J. S.
AU - Chien, K. F.
AU - Shih, Yu-Tai
PY - 2007/4/1
Y1 - 2007/4/1
N2 - This study investigates the growth mode of highly lattice-mismatch (∼ 14 %) CdTe self-assembled quantum dots grown on a ZnSe buffer-layer by molecular beam epitaxy. Two growth processes were used to prepare the samples. For the group-I samples, Te and Cd sources were alternately used to deposit a CdTe coverage layer of 0.6 to 8.0 mono-layers on a Zn-stabilized ZnSe buffer layer. The growth process of group-II samples was reversed; that is, the Cd beam was supplied first on a Se-stabilized ZnSe buffer layer. The optical spectra, including the power-dependent, time-resolved photoluminescence (PL) and PL excitation measurement, demonstrate a ZnTe-like and a CdSe-like two-dimensional precursor layer (wetting layer) in the group-I and group-II samples, respectively. Following the formation of the precursor layer, three-dimensional highly strained CdTe quantum dots were formed. Accordingly, the growth of CdTe self-assembled quantum-dot structures was attributed to the quasi-Stranski-Krastanow mode.
AB - This study investigates the growth mode of highly lattice-mismatch (∼ 14 %) CdTe self-assembled quantum dots grown on a ZnSe buffer-layer by molecular beam epitaxy. Two growth processes were used to prepare the samples. For the group-I samples, Te and Cd sources were alternately used to deposit a CdTe coverage layer of 0.6 to 8.0 mono-layers on a Zn-stabilized ZnSe buffer layer. The growth process of group-II samples was reversed; that is, the Cd beam was supplied first on a Se-stabilized ZnSe buffer layer. The optical spectra, including the power-dependent, time-resolved photoluminescence (PL) and PL excitation measurement, demonstrate a ZnTe-like and a CdSe-like two-dimensional precursor layer (wetting layer) in the group-I and group-II samples, respectively. Following the formation of the precursor layer, three-dimensional highly strained CdTe quantum dots were formed. Accordingly, the growth of CdTe self-assembled quantum-dot structures was attributed to the quasi-Stranski-Krastanow mode.
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U2 - 10.1016/j.jcrysgro.2006.11.176
DO - 10.1016/j.jcrysgro.2006.11.176
M3 - Article
AN - SCOPUS:33947329789
VL - 301-302
SP - 301
EP - 305
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - SPEC. ISS.
ER -