Quasi-Stranski-Krastanow growth mode of self-assembled CdTe quantum dots grown on ZnSe by molecular beam epitaxy

C. S. Yang, Y. J. Lai, W. C. Chou, D. S. Chen, J. S. Wang, K. F. Chien, Yu-Tai Shih

Research output: Contribution to journalArticle

1 Citation (Scopus)


This study investigates the growth mode of highly lattice-mismatch (∼ 14 %) CdTe self-assembled quantum dots grown on a ZnSe buffer-layer by molecular beam epitaxy. Two growth processes were used to prepare the samples. For the group-I samples, Te and Cd sources were alternately used to deposit a CdTe coverage layer of 0.6 to 8.0 mono-layers on a Zn-stabilized ZnSe buffer layer. The growth process of group-II samples was reversed; that is, the Cd beam was supplied first on a Se-stabilized ZnSe buffer layer. The optical spectra, including the power-dependent, time-resolved photoluminescence (PL) and PL excitation measurement, demonstrate a ZnTe-like and a CdSe-like two-dimensional precursor layer (wetting layer) in the group-I and group-II samples, respectively. Following the formation of the precursor layer, three-dimensional highly strained CdTe quantum dots were formed. Accordingly, the growth of CdTe self-assembled quantum-dot structures was attributed to the quasi-Stranski-Krastanow mode.

Original languageEnglish
Pages (from-to)301-305
Number of pages5
JournalJournal of Crystal Growth
Issue numberSPEC. ISS.
Publication statusPublished - 2007 Apr 1

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Quasi-Stranski-Krastanow growth mode of self-assembled CdTe quantum dots grown on ZnSe by molecular beam epitaxy'. Together they form a unique fingerprint.

  • Cite this