Quasi-Stranski-Krastanow growth mode of self-assembled CdTe quantum dots grown on ZnSe by molecular beam epitaxy

C. S. Yang, Y. J. Lai, W. C. Chou, D. S. Chen, J. S. Wang, K. F. Chien, Yu-Tai Shih

Research output: Contribution to journalArticle

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Abstract

This study investigates the growth mode of highly lattice-mismatch (∼ 14 %) CdTe self-assembled quantum dots grown on a ZnSe buffer-layer by molecular beam epitaxy. Two growth processes were used to prepare the samples. For the group-I samples, Te and Cd sources were alternately used to deposit a CdTe coverage layer of 0.6 to 8.0 mono-layers on a Zn-stabilized ZnSe buffer layer. The growth process of group-II samples was reversed; that is, the Cd beam was supplied first on a Se-stabilized ZnSe buffer layer. The optical spectra, including the power-dependent, time-resolved photoluminescence (PL) and PL excitation measurement, demonstrate a ZnTe-like and a CdSe-like two-dimensional precursor layer (wetting layer) in the group-I and group-II samples, respectively. Following the formation of the precursor layer, three-dimensional highly strained CdTe quantum dots were formed. Accordingly, the growth of CdTe self-assembled quantum-dot structures was attributed to the quasi-Stranski-Krastanow mode.

Original languageEnglish
Pages (from-to)301-305
Number of pages5
JournalJournal of Crystal Growth
Volume301-302
Issue numberSPEC. ISS.
DOIs
Publication statusPublished - 2007 Apr 1

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Laser modes
Molecular beam epitaxy
Semiconductor quantum dots
molecular beam epitaxy
Buffer layers
quantum dots
Photoluminescence
Lattice mismatch
buffers
Wetting
Deposits
photoluminescence
wetting
optical spectrum
deposits
excitation

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Yang, C. S. ; Lai, Y. J. ; Chou, W. C. ; Chen, D. S. ; Wang, J. S. ; Chien, K. F. ; Shih, Yu-Tai. / Quasi-Stranski-Krastanow growth mode of self-assembled CdTe quantum dots grown on ZnSe by molecular beam epitaxy. In: Journal of Crystal Growth. 2007 ; Vol. 301-302, No. SPEC. ISS. pp. 301-305.
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abstract = "This study investigates the growth mode of highly lattice-mismatch (∼ 14 {\%}) CdTe self-assembled quantum dots grown on a ZnSe buffer-layer by molecular beam epitaxy. Two growth processes were used to prepare the samples. For the group-I samples, Te and Cd sources were alternately used to deposit a CdTe coverage layer of 0.6 to 8.0 mono-layers on a Zn-stabilized ZnSe buffer layer. The growth process of group-II samples was reversed; that is, the Cd beam was supplied first on a Se-stabilized ZnSe buffer layer. The optical spectra, including the power-dependent, time-resolved photoluminescence (PL) and PL excitation measurement, demonstrate a ZnTe-like and a CdSe-like two-dimensional precursor layer (wetting layer) in the group-I and group-II samples, respectively. Following the formation of the precursor layer, three-dimensional highly strained CdTe quantum dots were formed. Accordingly, the growth of CdTe self-assembled quantum-dot structures was attributed to the quasi-Stranski-Krastanow mode.",
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Quasi-Stranski-Krastanow growth mode of self-assembled CdTe quantum dots grown on ZnSe by molecular beam epitaxy. / Yang, C. S.; Lai, Y. J.; Chou, W. C.; Chen, D. S.; Wang, J. S.; Chien, K. F.; Shih, Yu-Tai.

In: Journal of Crystal Growth, Vol. 301-302, No. SPEC. ISS., 01.04.2007, p. 301-305.

Research output: Contribution to journalArticle

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AU - Yang, C. S.

AU - Lai, Y. J.

AU - Chou, W. C.

AU - Chen, D. S.

AU - Wang, J. S.

AU - Chien, K. F.

AU - Shih, Yu-Tai

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N2 - This study investigates the growth mode of highly lattice-mismatch (∼ 14 %) CdTe self-assembled quantum dots grown on a ZnSe buffer-layer by molecular beam epitaxy. Two growth processes were used to prepare the samples. For the group-I samples, Te and Cd sources were alternately used to deposit a CdTe coverage layer of 0.6 to 8.0 mono-layers on a Zn-stabilized ZnSe buffer layer. The growth process of group-II samples was reversed; that is, the Cd beam was supplied first on a Se-stabilized ZnSe buffer layer. The optical spectra, including the power-dependent, time-resolved photoluminescence (PL) and PL excitation measurement, demonstrate a ZnTe-like and a CdSe-like two-dimensional precursor layer (wetting layer) in the group-I and group-II samples, respectively. Following the formation of the precursor layer, three-dimensional highly strained CdTe quantum dots were formed. Accordingly, the growth of CdTe self-assembled quantum-dot structures was attributed to the quasi-Stranski-Krastanow mode.

AB - This study investigates the growth mode of highly lattice-mismatch (∼ 14 %) CdTe self-assembled quantum dots grown on a ZnSe buffer-layer by molecular beam epitaxy. Two growth processes were used to prepare the samples. For the group-I samples, Te and Cd sources were alternately used to deposit a CdTe coverage layer of 0.6 to 8.0 mono-layers on a Zn-stabilized ZnSe buffer layer. The growth process of group-II samples was reversed; that is, the Cd beam was supplied first on a Se-stabilized ZnSe buffer layer. The optical spectra, including the power-dependent, time-resolved photoluminescence (PL) and PL excitation measurement, demonstrate a ZnTe-like and a CdSe-like two-dimensional precursor layer (wetting layer) in the group-I and group-II samples, respectively. Following the formation of the precursor layer, three-dimensional highly strained CdTe quantum dots were formed. Accordingly, the growth of CdTe self-assembled quantum-dot structures was attributed to the quasi-Stranski-Krastanow mode.

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