Quantum microcavities in II-VI semiconductors: Strong coupling regime in vertical cavity lasers

P. Kelkar, A. V. Nurmikko, C. C. Chu, J. Han, W. L. Chen, R. L. Gunshor

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Abstract

Enhanced light-matter coupling effects are striking in II-VI quantum well microresonators, with the normal mode (Rabi) splitting exceeding 10 meV per quantum well at the exciton resonance in ZnSe-based heterostructures. Such a dominating imprint of the mixed exciton-photon modes extends to high electron-hole pair densities, including the regime of vertical cavity laser operation. We present results from gain spectroscopy to show how the composite photon-exciton oscillator supplies optical gain for a laser operating beyond the conventional perturbative regime.

Original languageEnglish
Pages (from-to)745-749
Number of pages5
JournalJournal of Crystal Growth
Volume184-185
Publication statusPublished - 1998 Jan 1

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All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Kelkar, P., Nurmikko, A. V., Chu, C. C., Han, J., Chen, W. L., & Gunshor, R. L. (1998). Quantum microcavities in II-VI semiconductors: Strong coupling regime in vertical cavity lasers. Journal of Crystal Growth, 184-185, 745-749.