Quantum microcavities in II-VI semiconductors: Strong coupling regime in vertical cavity lasers

P. Kelkar, A. V. Nurmikko, C. C. Chu, J. Han, W. L. Chen, R. L. Gunshor

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Enhanced light-matter coupling effects are striking in II-VI quantum well microresonators, with the normal mode (Rabi) splitting exceeding 10 meV per quantum well at the exciton resonance in ZnSe-based heterostructures. Such a dominating imprint of the mixed exciton-photon modes extends to high electron-hole pair densities, including the regime of vertical cavity laser operation. We present results from gain spectroscopy to show how the composite photon-exciton oscillator supplies optical gain for a laser operating beyond the conventional perturbative regime.

Original languageEnglish
Pages (from-to)745-749
Number of pages5
JournalJournal of Crystal Growth
Volume184-185
DOIs
Publication statusPublished - 1998 Jan 1

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Quantum microcavities in II-VI semiconductors: Strong coupling regime in vertical cavity lasers'. Together they form a unique fingerprint.

Cite this