Quantum microcavities in II-VI semiconductors: Strong coupling regime in vertical cavity lasers

P. Kelkar, A. V. Nurmikko, C. C. Chu, J. Han, Wei-Li Chen, R. L. Gunshor

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Enhanced light-matter coupling effects are striking in II-VI quantum well microresonators, with the normal mode (Rabi) splitting exceeding 10 meV per quantum well at the exciton resonance in ZnSe-based heterostructures. Such a dominating imprint of the mixed exciton-photon modes extends to high electron-hole pair densities, including the regime of vertical cavity laser operation. We present results from gain spectroscopy to show how the composite photon-exciton oscillator supplies optical gain for a laser operating beyond the conventional perturbative regime.

Original languageEnglish
Pages (from-to)745-749
Number of pages5
JournalJournal of Crystal Growth
Volume184-185
Publication statusPublished - 1998 Jan 1

Fingerprint

Microcavities
Laser resonators
laser cavities
Excitons
excitons
Semiconductor quantum wells
Photons
quantum wells
Optical gain
photons
Heterojunctions
oscillators
Spectroscopy
composite materials
Electrons
Lasers
Composite materials
spectroscopy
lasers
II-VI semiconductors

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Kelkar, P., Nurmikko, A. V., Chu, C. C., Han, J., Chen, W-L., & Gunshor, R. L. (1998). Quantum microcavities in II-VI semiconductors: Strong coupling regime in vertical cavity lasers. Journal of Crystal Growth, 184-185, 745-749.
Kelkar, P. ; Nurmikko, A. V. ; Chu, C. C. ; Han, J. ; Chen, Wei-Li ; Gunshor, R. L. / Quantum microcavities in II-VI semiconductors : Strong coupling regime in vertical cavity lasers. In: Journal of Crystal Growth. 1998 ; Vol. 184-185. pp. 745-749.
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Kelkar, P, Nurmikko, AV, Chu, CC, Han, J, Chen, W-L & Gunshor, RL 1998, 'Quantum microcavities in II-VI semiconductors: Strong coupling regime in vertical cavity lasers', Journal of Crystal Growth, vol. 184-185, pp. 745-749.

Quantum microcavities in II-VI semiconductors : Strong coupling regime in vertical cavity lasers. / Kelkar, P.; Nurmikko, A. V.; Chu, C. C.; Han, J.; Chen, Wei-Li; Gunshor, R. L.

In: Journal of Crystal Growth, Vol. 184-185, 01.01.1998, p. 745-749.

Research output: Contribution to journalArticle

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T1 - Quantum microcavities in II-VI semiconductors

T2 - Strong coupling regime in vertical cavity lasers

AU - Kelkar, P.

AU - Nurmikko, A. V.

AU - Chu, C. C.

AU - Han, J.

AU - Chen, Wei-Li

AU - Gunshor, R. L.

PY - 1998/1/1

Y1 - 1998/1/1

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AB - Enhanced light-matter coupling effects are striking in II-VI quantum well microresonators, with the normal mode (Rabi) splitting exceeding 10 meV per quantum well at the exciton resonance in ZnSe-based heterostructures. Such a dominating imprint of the mixed exciton-photon modes extends to high electron-hole pair densities, including the regime of vertical cavity laser operation. We present results from gain spectroscopy to show how the composite photon-exciton oscillator supplies optical gain for a laser operating beyond the conventional perturbative regime.

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