Quantum effect of the source electrode on electrical and optical characteristics of double-barrier resonant tunneling structures

J. S. Wu; C. P. Lee; C. Y. Chang; K. H. Chang; D. G. Liu; D. C. Liou

Quantum effect of the source electrode on electrical and optical characteristics of double-barrier resonant tunneling structures

J. S. Wu, C. P. Lee, C. Y. Chang, K. H. Chang, D. G. Liu, D. C. Liou

Department of Electronic Engineering

Research output: Contribution to journal › Conference article

2 Citations (Scopus)

Abstract

The electrical and optical characteristics of the DBRTS (double-barrier resonant tunneling structure) with undoped electrodes were studied. The quantum size effect in the accumulation layer due to the large band bending causes irregular features in device characteristics. Additional kinks in the I-V curve were observed. The two-dimensionality of the source electrons is believed to account for the excellent NDR performance obtained in these devices. In field-induced PL (photoluminescence) measurements, the PL intensity peaks at the occurrence of the kink, but not at the peak-current voltage. This provides optical evidence of the correlation between the kink and the first excited quantum state in the accumulation layer. The PL intensity as a function of bias is discussed.

Original language	English
Pages (from-to)	343-346
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
Publication status	Published - 1990 Dec 1
Event	1990 International Electron Devices Meeting - San Francisco, CA, USA Duration: 1990 Dec 9 → 1990 Dec 12

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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Wu, J. S., Lee, C. P., Chang, C. Y., Chang, K. H., Liu, D. G., & Liou, D. C. (1990). Quantum effect of the source electrode on electrical and optical characteristics of double-barrier resonant tunneling structures. Technical Digest - International Electron Devices Meeting, 343-346.

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title = "Quantum effect of the source electrode on electrical and optical characteristics of double-barrier resonant tunneling structures",

abstract = "The electrical and optical characteristics of the DBRTS (double-barrier resonant tunneling structure) with undoped electrodes were studied. The quantum size effect in the accumulation layer due to the large band bending causes irregular features in device characteristics. Additional kinks in the I-V curve were observed. The two-dimensionality of the source electrons is believed to account for the excellent NDR performance obtained in these devices. In field-induced PL (photoluminescence) measurements, the PL intensity peaks at the occurrence of the kink, but not at the peak-current voltage. This provides optical evidence of the correlation between the kink and the first excited quantum state in the accumulation layer. The PL intensity as a function of bias is discussed.",

author = "Wu, {J. S.} and Lee, {C. P.} and Chang, {C. Y.} and Chang, {K. H.} and Liu, {D. G.} and Liou, {D. C.}",

year = "1990",

month = dec,

day = "1",

language = "English",

pages = "343--346",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "1990 International Electron Devices Meeting ; Conference date: 09-12-1990 Through 12-12-1990",

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TY - JOUR

T1 - Quantum effect of the source electrode on electrical and optical characteristics of double-barrier resonant tunneling structures

AU - Wu, J. S.

AU - Lee, C. P.

AU - Chang, C. Y.

AU - Chang, K. H.

AU - Liu, D. G.

AU - Liou, D. C.

PY - 1990/12/1

Y1 - 1990/12/1

N2 - The electrical and optical characteristics of the DBRTS (double-barrier resonant tunneling structure) with undoped electrodes were studied. The quantum size effect in the accumulation layer due to the large band bending causes irregular features in device characteristics. Additional kinks in the I-V curve were observed. The two-dimensionality of the source electrons is believed to account for the excellent NDR performance obtained in these devices. In field-induced PL (photoluminescence) measurements, the PL intensity peaks at the occurrence of the kink, but not at the peak-current voltage. This provides optical evidence of the correlation between the kink and the first excited quantum state in the accumulation layer. The PL intensity as a function of bias is discussed.

AB - The electrical and optical characteristics of the DBRTS (double-barrier resonant tunneling structure) with undoped electrodes were studied. The quantum size effect in the accumulation layer due to the large band bending causes irregular features in device characteristics. Additional kinks in the I-V curve were observed. The two-dimensionality of the source electrons is believed to account for the excellent NDR performance obtained in these devices. In field-induced PL (photoluminescence) measurements, the PL intensity peaks at the occurrence of the kink, but not at the peak-current voltage. This provides optical evidence of the correlation between the kink and the first excited quantum state in the accumulation layer. The PL intensity as a function of bias is discussed.

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AN - SCOPUS:0025575601

SP - 343

EP - 346

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

SN - 0163-1918

T2 - 1990 International Electron Devices Meeting

Y2 - 9 December 1990 through 12 December 1990

ER -