Quantum effect of the source electrode on electrical and optical characteristics of double-barrier resonant tunneling structures

J. S. Wu, C. P. Lee, C. Y. Chang, K. H. Chang, D. G. Liu, D. C. Liou

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

The electrical and optical characteristics of the DBRTS (double-barrier resonant tunneling structure) with undoped electrodes were studied. The quantum size effect in the accumulation layer due to the large band bending causes irregular features in device characteristics. Additional kinks in the I-V curve were observed. The two-dimensionality of the source electrons is believed to account for the excellent NDR performance obtained in these devices. In field-induced PL (photoluminescence) measurements, the PL intensity peaks at the occurrence of the kink, but not at the peak-current voltage. This provides optical evidence of the correlation between the kink and the first excited quantum state in the accumulation layer. The PL intensity as a function of bias is discussed.

Original languageEnglish
Pages (from-to)343-346
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 1990 Dec 1
Event1990 International Electron Devices Meeting - San Francisco, CA, USA
Duration: 1990 Dec 91990 Dec 12

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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