Quantum effect of the source electrode on electrical and optical characteristics of double-barrier resonant tunneling structures

Jenq-Shinn Wu, C. P. Lee, C. Y. Chang, K. H. Chang, D. G. Liu, D. C. Liou

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

The electrical and optical characteristics of the DBRTS (double-barrier resonant tunneling structure) with undoped electrodes were studied. The quantum size effect in the accumulation layer due to the large band bending causes irregular features in device characteristics. Additional kinks in the I-V curve were observed. The two-dimensionality of the source electrons is believed to account for the excellent NDR performance obtained in these devices. In field-induced PL (photoluminescence) measurements, the PL intensity peaks at the occurrence of the kink, but not at the peak-current voltage. This provides optical evidence of the correlation between the kink and the first excited quantum state in the accumulation layer. The PL intensity as a function of bias is discussed.

Original languageEnglish
Pages (from-to)343-346
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 1990 Dec 1
Event1990 International Electron Devices Meeting - San Francisco, CA, USA
Duration: 1990 Dec 91990 Dec 12

Fingerprint

Resonant tunneling
resonant tunneling
Photoluminescence
photoluminescence
Electrodes
electrodes
Electron sources
electron sources
occurrences
causes
Electric potential
electric potential
curves

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

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title = "Quantum effect of the source electrode on electrical and optical characteristics of double-barrier resonant tunneling structures",
abstract = "The electrical and optical characteristics of the DBRTS (double-barrier resonant tunneling structure) with undoped electrodes were studied. The quantum size effect in the accumulation layer due to the large band bending causes irregular features in device characteristics. Additional kinks in the I-V curve were observed. The two-dimensionality of the source electrons is believed to account for the excellent NDR performance obtained in these devices. In field-induced PL (photoluminescence) measurements, the PL intensity peaks at the occurrence of the kink, but not at the peak-current voltage. This provides optical evidence of the correlation between the kink and the first excited quantum state in the accumulation layer. The PL intensity as a function of bias is discussed.",
author = "Jenq-Shinn Wu and Lee, {C. P.} and Chang, {C. Y.} and Chang, {K. H.} and Liu, {D. G.} and Liou, {D. C.}",
year = "1990",
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journal = "Technical Digest - International Electron Devices Meeting",
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Quantum effect of the source electrode on electrical and optical characteristics of double-barrier resonant tunneling structures. / Wu, Jenq-Shinn; Lee, C. P.; Chang, C. Y.; Chang, K. H.; Liu, D. G.; Liou, D. C.

In: Technical Digest - International Electron Devices Meeting, 01.12.1990, p. 343-346.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Quantum effect of the source electrode on electrical and optical characteristics of double-barrier resonant tunneling structures

AU - Wu, Jenq-Shinn

AU - Lee, C. P.

AU - Chang, C. Y.

AU - Chang, K. H.

AU - Liu, D. G.

AU - Liou, D. C.

PY - 1990/12/1

Y1 - 1990/12/1

N2 - The electrical and optical characteristics of the DBRTS (double-barrier resonant tunneling structure) with undoped electrodes were studied. The quantum size effect in the accumulation layer due to the large band bending causes irregular features in device characteristics. Additional kinks in the I-V curve were observed. The two-dimensionality of the source electrons is believed to account for the excellent NDR performance obtained in these devices. In field-induced PL (photoluminescence) measurements, the PL intensity peaks at the occurrence of the kink, but not at the peak-current voltage. This provides optical evidence of the correlation between the kink and the first excited quantum state in the accumulation layer. The PL intensity as a function of bias is discussed.

AB - The electrical and optical characteristics of the DBRTS (double-barrier resonant tunneling structure) with undoped electrodes were studied. The quantum size effect in the accumulation layer due to the large band bending causes irregular features in device characteristics. Additional kinks in the I-V curve were observed. The two-dimensionality of the source electrons is believed to account for the excellent NDR performance obtained in these devices. In field-induced PL (photoluminescence) measurements, the PL intensity peaks at the occurrence of the kink, but not at the peak-current voltage. This provides optical evidence of the correlation between the kink and the first excited quantum state in the accumulation layer. The PL intensity as a function of bias is discussed.

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JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

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