Quantum effect in the accumulation layer on field-induced photoluminescence of double-barrier resonant tunneling structures

J. S. Wu, K. H. Chang, C. P. Lee, C. Y. Chang, D. G. Liu, D. C. Liou

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The photoluminescence (PL) of double-barrier resonant tunneling structures (DBRTSs) with undoped electrodes under bias has been studied. The strong band bending across the cathode causes the quantum size effect in the accumulation layer. The resonant tunneling of electrons from the first excited quantum level in the accumulation layer produces a kink in the current-voltage characteristic. It is found that the PL intensity from the quantum well (QW) as a function of bias sharply peaks at the voltage corresponding to the kink. This provides evidence of the interaction between the first excited quantum state in the accumulation layer and the resonant state in the QW.

Original languageEnglish
Pages (from-to)87-89
Number of pages3
JournalApplied Physics Letters
Volume59
Issue number1
DOIs
Publication statusPublished - 1991 Dec 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Quantum effect in the accumulation layer on field-induced photoluminescence of double-barrier resonant tunneling structures'. Together they form a unique fingerprint.

Cite this