Quantum effect in the accumulation layer on field-induced photoluminescence of double-barrier resonant tunneling structures

J. S. Wu, K. H. Chang, C. P. Lee, C. Y. Chang, D. G. Liu, D. C. Liou

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The photoluminescence (PL) of double-barrier resonant tunneling structures (DBRTSs) with undoped electrodes under bias has been studied. The strong band bending across the cathode causes the quantum size effect in the accumulation layer. The resonant tunneling of electrons from the first excited quantum level in the accumulation layer produces a kink in the current-voltage characteristic. It is found that the PL intensity from the quantum well (QW) as a function of bias sharply peaks at the voltage corresponding to the kink. This provides evidence of the interaction between the first excited quantum state in the accumulation layer and the resonant state in the QW.

Original languageEnglish
Pages (from-to)87-89
Number of pages3
JournalApplied Physics Letters
Volume59
Issue number1
DOIs
Publication statusPublished - 1991 Dec 1

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resonant tunneling
photoluminescence
quantum wells
electric potential
cathodes
electrodes
causes
electrons
interactions

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Wu, J. S. ; Chang, K. H. ; Lee, C. P. ; Chang, C. Y. ; Liu, D. G. ; Liou, D. C. / Quantum effect in the accumulation layer on field-induced photoluminescence of double-barrier resonant tunneling structures. In: Applied Physics Letters. 1991 ; Vol. 59, No. 1. pp. 87-89.
@article{6727337dc12342a1ae58e3472c787445,
title = "Quantum effect in the accumulation layer on field-induced photoluminescence of double-barrier resonant tunneling structures",
abstract = "The photoluminescence (PL) of double-barrier resonant tunneling structures (DBRTSs) with undoped electrodes under bias has been studied. The strong band bending across the cathode causes the quantum size effect in the accumulation layer. The resonant tunneling of electrons from the first excited quantum level in the accumulation layer produces a kink in the current-voltage characteristic. It is found that the PL intensity from the quantum well (QW) as a function of bias sharply peaks at the voltage corresponding to the kink. This provides evidence of the interaction between the first excited quantum state in the accumulation layer and the resonant state in the QW.",
author = "Wu, {J. S.} and Chang, {K. H.} and Lee, {C. P.} and Chang, {C. Y.} and Liu, {D. G.} and Liou, {D. C.}",
year = "1991",
month = "12",
day = "1",
doi = "10.1063/1.105532",
language = "English",
volume = "59",
pages = "87--89",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "1",

}

Quantum effect in the accumulation layer on field-induced photoluminescence of double-barrier resonant tunneling structures. / Wu, J. S.; Chang, K. H.; Lee, C. P.; Chang, C. Y.; Liu, D. G.; Liou, D. C.

In: Applied Physics Letters, Vol. 59, No. 1, 01.12.1991, p. 87-89.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Quantum effect in the accumulation layer on field-induced photoluminescence of double-barrier resonant tunneling structures

AU - Wu, J. S.

AU - Chang, K. H.

AU - Lee, C. P.

AU - Chang, C. Y.

AU - Liu, D. G.

AU - Liou, D. C.

PY - 1991/12/1

Y1 - 1991/12/1

N2 - The photoluminescence (PL) of double-barrier resonant tunneling structures (DBRTSs) with undoped electrodes under bias has been studied. The strong band bending across the cathode causes the quantum size effect in the accumulation layer. The resonant tunneling of electrons from the first excited quantum level in the accumulation layer produces a kink in the current-voltage characteristic. It is found that the PL intensity from the quantum well (QW) as a function of bias sharply peaks at the voltage corresponding to the kink. This provides evidence of the interaction between the first excited quantum state in the accumulation layer and the resonant state in the QW.

AB - The photoluminescence (PL) of double-barrier resonant tunneling structures (DBRTSs) with undoped electrodes under bias has been studied. The strong band bending across the cathode causes the quantum size effect in the accumulation layer. The resonant tunneling of electrons from the first excited quantum level in the accumulation layer produces a kink in the current-voltage characteristic. It is found that the PL intensity from the quantum well (QW) as a function of bias sharply peaks at the voltage corresponding to the kink. This provides evidence of the interaction between the first excited quantum state in the accumulation layer and the resonant state in the QW.

UR - http://www.scopus.com/inward/record.url?scp=33645045610&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33645045610&partnerID=8YFLogxK

U2 - 10.1063/1.105532

DO - 10.1063/1.105532

M3 - Article

AN - SCOPUS:33645045610

VL - 59

SP - 87

EP - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 1

ER -