Pulsed L-I characteristics of 670 nm AlGaInP/InGaP broad area lasers

Hung Pin D. Yang, Man-Fang Huang, Fei Chang Hwang, Chung Kuei Huang, Chia Cheng Liu

Research output: Contribution to journalArticle

Abstract

We report the results of the pulsed L-I characteristics of 670 nm AlGaInP/InGaP broad area lasers. The measured pulsed L-I curves are found to be strongly dependent on the duty cycles of the applied current pulses, which were mainly attributed to the heating effect within the AlGaInP/InGaP lasers. Current pulse heating effects are negligible only at pulse duty cycles of 0·036% or below.

Original languageEnglish
Pages (from-to)377-382
Number of pages6
JournalInternational Journal of Optoelectronics
Volume11
Issue number6
Publication statusPublished - 1997 Nov 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

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