Pulsed L-I characteristics of 670 nm AlGaInP/InGaP broad area lasers

Hung Pin D. Yang, Man-Fang Huang, Fei Chang Hwang, Chung Kuei Huang, Chia Cheng Liu

Research output: Contribution to journalArticle

Abstract

We report the results of the pulsed L-I characteristics of 670 nm AlGaInP/InGaP broad area lasers. The measured pulsed L-I curves are found to be strongly dependent on the duty cycles of the applied current pulses, which were mainly attributed to the heating effect within the AlGaInP/InGaP lasers. Current pulse heating effects are negligible only at pulse duty cycles of 0·036% or below.

Original languageEnglish
Pages (from-to)377-382
Number of pages6
JournalInternational Journal of Optoelectronics
Volume11
Issue number6
Publication statusPublished - 1997 Nov 1

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Heating
pulse heating
cycles
Lasers
pulses
lasers
Laser pulses
heating
curves

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

Yang, H. P. D., Huang, M-F., Hwang, F. C., Huang, C. K., & Liu, C. C. (1997). Pulsed L-I characteristics of 670 nm AlGaInP/InGaP broad area lasers. International Journal of Optoelectronics, 11(6), 377-382.
Yang, Hung Pin D. ; Huang, Man-Fang ; Hwang, Fei Chang ; Huang, Chung Kuei ; Liu, Chia Cheng. / Pulsed L-I characteristics of 670 nm AlGaInP/InGaP broad area lasers. In: International Journal of Optoelectronics. 1997 ; Vol. 11, No. 6. pp. 377-382.
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Yang, HPD, Huang, M-F, Hwang, FC, Huang, CK & Liu, CC 1997, 'Pulsed L-I characteristics of 670 nm AlGaInP/InGaP broad area lasers', International Journal of Optoelectronics, vol. 11, no. 6, pp. 377-382.

Pulsed L-I characteristics of 670 nm AlGaInP/InGaP broad area lasers. / Yang, Hung Pin D.; Huang, Man-Fang; Hwang, Fei Chang; Huang, Chung Kuei; Liu, Chia Cheng.

In: International Journal of Optoelectronics, Vol. 11, No. 6, 01.11.1997, p. 377-382.

Research output: Contribution to journalArticle

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