Abstract
We report the results of the pulsed L-I characteristics of 670 nm AlGaInP/InGaP broad area lasers. The measured pulsed L-I curves are found to be strongly dependent on the duty cycles of the applied current pulses, which were mainly attributed to the heating effect within the AlGaInP/InGaP lasers. Current pulse heating effects are negligible only at pulse duty cycles of 0·036% or below.
| Original language | English |
|---|---|
| Pages (from-to) | 377-382 |
| Number of pages | 6 |
| Journal | International Journal of Optoelectronics |
| Volume | 11 |
| Issue number | 6 |
| Publication status | Published - 1997 Nov 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
Cite this
Yang, H. P. D., Huang, M-F., Hwang, F. C., Huang, C. K., & Liu, C. C. (1997). Pulsed L-I characteristics of 670 nm AlGaInP/InGaP broad area lasers. International Journal of Optoelectronics, 11(6), 377-382.