Abstract
In this research, yttrium oxide (Y 2O 3) gate dielectric films were deposited onto alkali-free glass substrates by a sol-gel process. This report describes the effects of annealing temperatures on the microstructural and electrical properties of sol-gel derived Y 2O 3 films. These sol-gel films were preheated at 300 °C for 10 min, and then annealed at 400-550 °C for 1 h. XRD results revealed that all annealed films exhibited preferential (2 2 2) orientation; films annealed at 450-550 °C were polycrystalline with cubic structures. The average transmittances of polycrystalline Y 2O 3 films were over 88.0% in the visible range. The electrical properties of the Y 2O 3 films were analyzed by capacitance-voltage (C-V) and current-voltage (I-V) measurements. Films annealed at 500 °C yielded the lowest leakage current density, 1.8 × 10 -7 A/cm 2, at an applied voltage of 5 V, and had a dielectric constant of 10.0 at 100 kHz.
| Original language | English |
|---|---|
| Pages (from-to) | 1677-1682 |
| Number of pages | 6 |
| Journal | Ceramics International |
| Volume | 38 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2012 Mar 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Process Chemistry and Technology
- Surfaces, Coatings and Films
- Materials Chemistry
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Properties of transparent yttrium oxide dielectric films prepared by sol-gel process. / Tsay, Chien Yie; Cheng, Chia Hsiang; Wang, Yu Wu.
In: Ceramics International, Vol. 38, No. 2, 01.03.2012, p. 1677-1682.Research output: Contribution to journal › Article
TY - JOUR
T1 - Properties of transparent yttrium oxide dielectric films prepared by sol-gel process
AU - Tsay, Chien Yie
AU - Cheng, Chia Hsiang
AU - Wang, Yu Wu
PY - 2012/3/1
Y1 - 2012/3/1
N2 - In this research, yttrium oxide (Y 2O 3) gate dielectric films were deposited onto alkali-free glass substrates by a sol-gel process. This report describes the effects of annealing temperatures on the microstructural and electrical properties of sol-gel derived Y 2O 3 films. These sol-gel films were preheated at 300 °C for 10 min, and then annealed at 400-550 °C for 1 h. XRD results revealed that all annealed films exhibited preferential (2 2 2) orientation; films annealed at 450-550 °C were polycrystalline with cubic structures. The average transmittances of polycrystalline Y 2O 3 films were over 88.0% in the visible range. The electrical properties of the Y 2O 3 films were analyzed by capacitance-voltage (C-V) and current-voltage (I-V) measurements. Films annealed at 500 °C yielded the lowest leakage current density, 1.8 × 10 -7 A/cm 2, at an applied voltage of 5 V, and had a dielectric constant of 10.0 at 100 kHz.
AB - In this research, yttrium oxide (Y 2O 3) gate dielectric films were deposited onto alkali-free glass substrates by a sol-gel process. This report describes the effects of annealing temperatures on the microstructural and electrical properties of sol-gel derived Y 2O 3 films. These sol-gel films were preheated at 300 °C for 10 min, and then annealed at 400-550 °C for 1 h. XRD results revealed that all annealed films exhibited preferential (2 2 2) orientation; films annealed at 450-550 °C were polycrystalline with cubic structures. The average transmittances of polycrystalline Y 2O 3 films were over 88.0% in the visible range. The electrical properties of the Y 2O 3 films were analyzed by capacitance-voltage (C-V) and current-voltage (I-V) measurements. Films annealed at 500 °C yielded the lowest leakage current density, 1.8 × 10 -7 A/cm 2, at an applied voltage of 5 V, and had a dielectric constant of 10.0 at 100 kHz.
UR - http://www.scopus.com/inward/record.url?scp=83555173499&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=83555173499&partnerID=8YFLogxK
U2 - 10.1016/j.ceramint.2011.09.060
DO - 10.1016/j.ceramint.2011.09.060
M3 - Article
AN - SCOPUS:83555173499
VL - 38
SP - 1677
EP - 1682
JO - Ceramics International
JF - Ceramics International
SN - 0272-8842
IS - 2
ER -