Properties of transparent yttrium oxide dielectric films prepared by sol-gel process

Chien Yie Tsay; Chia Hsiang Cheng; Yu Wu Wang

doi:10.1016/j.ceramint.2011.09.060

Properties of transparent yttrium oxide dielectric films prepared by sol-gel process

Chien Yie Tsay, Chia Hsiang Cheng, Yu Wu Wang

Graduate Institute of Photonics

Research output: Contribution to journal › Article

20 Citations (Scopus)

Abstract

In this research, yttrium oxide (Y ₂O ₃) gate dielectric films were deposited onto alkali-free glass substrates by a sol-gel process. This report describes the effects of annealing temperatures on the microstructural and electrical properties of sol-gel derived Y ₂O ₃ films. These sol-gel films were preheated at 300 °C for 10 min, and then annealed at 400-550 °C for 1 h. XRD results revealed that all annealed films exhibited preferential (2 2 2) orientation; films annealed at 450-550 °C were polycrystalline with cubic structures. The average transmittances of polycrystalline Y ₂O ₃ films were over 88.0% in the visible range. The electrical properties of the Y ₂O ₃ films were analyzed by capacitance-voltage (C-V) and current-voltage (I-V) measurements. Films annealed at 500 °C yielded the lowest leakage current density, 1.8 × 10 ^-7 A/cm ², at an applied voltage of 5 V, and had a dielectric constant of 10.0 at 100 kHz.

Original language	English
Pages (from-to)	1677-1682
Number of pages	6
Journal	Ceramics International
Volume	38
Issue number	2
DOIs	https://doi.org/10.1016/j.ceramint.2011.09.060
Publication status	Published - 2012 Mar 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Process Chemistry and Technology
Surfaces, Coatings and Films
Materials Chemistry

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Tsay, C. Y., Cheng, C. H., & Wang, Y. W. (2012). Properties of transparent yttrium oxide dielectric films prepared by sol-gel process. Ceramics International, 38(2), 1677-1682. https://doi.org/10.1016/j.ceramint.2011.09.060

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title = "Properties of transparent yttrium oxide dielectric films prepared by sol-gel process",

abstract = "In this research, yttrium oxide (Y 2O 3) gate dielectric films were deposited onto alkali-free glass substrates by a sol-gel process. This report describes the effects of annealing temperatures on the microstructural and electrical properties of sol-gel derived Y 2O 3 films. These sol-gel films were preheated at 300 °C for 10 min, and then annealed at 400-550 °C for 1 h. XRD results revealed that all annealed films exhibited preferential (2 2 2) orientation; films annealed at 450-550 °C were polycrystalline with cubic structures. The average transmittances of polycrystalline Y 2O 3 films were over 88.0% in the visible range. The electrical properties of the Y 2O 3 films were analyzed by capacitance-voltage (C-V) and current-voltage (I-V) measurements. Films annealed at 500 °C yielded the lowest leakage current density, 1.8 × 10 -7 A/cm 2, at an applied voltage of 5 V, and had a dielectric constant of 10.0 at 100 kHz.",

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N2 - In this research, yttrium oxide (Y 2O 3) gate dielectric films were deposited onto alkali-free glass substrates by a sol-gel process. This report describes the effects of annealing temperatures on the microstructural and electrical properties of sol-gel derived Y 2O 3 films. These sol-gel films were preheated at 300 °C for 10 min, and then annealed at 400-550 °C for 1 h. XRD results revealed that all annealed films exhibited preferential (2 2 2) orientation; films annealed at 450-550 °C were polycrystalline with cubic structures. The average transmittances of polycrystalline Y 2O 3 films were over 88.0% in the visible range. The electrical properties of the Y 2O 3 films were analyzed by capacitance-voltage (C-V) and current-voltage (I-V) measurements. Films annealed at 500 °C yielded the lowest leakage current density, 1.8 × 10 -7 A/cm 2, at an applied voltage of 5 V, and had a dielectric constant of 10.0 at 100 kHz.

AB - In this research, yttrium oxide (Y 2O 3) gate dielectric films were deposited onto alkali-free glass substrates by a sol-gel process. This report describes the effects of annealing temperatures on the microstructural and electrical properties of sol-gel derived Y 2O 3 films. These sol-gel films were preheated at 300 °C for 10 min, and then annealed at 400-550 °C for 1 h. XRD results revealed that all annealed films exhibited preferential (2 2 2) orientation; films annealed at 450-550 °C were polycrystalline with cubic structures. The average transmittances of polycrystalline Y 2O 3 films were over 88.0% in the visible range. The electrical properties of the Y 2O 3 films were analyzed by capacitance-voltage (C-V) and current-voltage (I-V) measurements. Films annealed at 500 °C yielded the lowest leakage current density, 1.8 × 10 -7 A/cm 2, at an applied voltage of 5 V, and had a dielectric constant of 10.0 at 100 kHz.

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