Promoting control of antiferromagnet-induced perpendicular magnetic anisotropy in magnetic multilayers: Effects of applying in-plane magnetic supporting layers

Bo Yao Wang; Chun Wei Huang; Ming Shian Tsai; Kai Lin; Chun Chieh Chung; Nae Yeou Jih; Chun I. Lu; Tzu Hung Chuang; Der Hsin Wei

doi:10.7567/1882-0786/ab09a8

Promoting control of antiferromagnet-induced perpendicular magnetic anisotropy in magnetic multilayers: Effects of applying in-plane magnetic supporting layers

Bo Yao Wang, Chun Wei Huang, Ming Shian Tsai, Kai Lin, Chun Chieh Chung, Nae Yeou Jih, Chun I. Lu, Tzu Hung Chuang, Der Hsin Wei

Department of Physics

Research output: Contribution to journal › Article › peer-review

Abstract

We report that antiferromagnet-induced perpendicular magnetic anisotropy (PMA) occurring in magnetic thin films can be effectively controlled by applying ultrathin in-plane magnetic supporting layers with high ferromagnetic ordering temperature through magnetic proximity effects. In a series of epitaxially grown 12-ML Ni/Co/Mn/Co/Cu(001) films, we observed that the PMA of the top 12-ML Ni/Co films and the long-range antiferromagnetic ordering of Mn film were enhanced concurrently with the establishment of ferromagnetic ordering of the bottom Co film. This clearly proves the underlying mechanism of magnetic proximity effects, and offers another degree of freedom for the control of perpendicular-based magnetic logical devices.

Original language	English
Article number	043004
Journal	Applied Physics Express
Volume	12
Issue number	4
DOIs	https://doi.org/10.7567/1882-0786/ab09a8
Publication status	Published - 2019 Apr 1

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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title = "Promoting control of antiferromagnet-induced perpendicular magnetic anisotropy in magnetic multilayers: Effects of applying in-plane magnetic supporting layers",

abstract = "We report that antiferromagnet-induced perpendicular magnetic anisotropy (PMA) occurring in magnetic thin films can be effectively controlled by applying ultrathin in-plane magnetic supporting layers with high ferromagnetic ordering temperature through magnetic proximity effects. In a series of epitaxially grown 12-ML Ni/Co/Mn/Co/Cu(001) films, we observed that the PMA of the top 12-ML Ni/Co films and the long-range antiferromagnetic ordering of Mn film were enhanced concurrently with the establishment of ferromagnetic ordering of the bottom Co film. This clearly proves the underlying mechanism of magnetic proximity effects, and offers another degree of freedom for the control of perpendicular-based magnetic logical devices.",

author = "Wang, {Bo Yao} and Huang, {Chun Wei} and Tsai, {Ming Shian} and Kai Lin and Chung, {Chun Chieh} and Jih, {Nae Yeou} and Lu, {Chun I.} and Chuang, {Tzu Hung} and Wei, {Der Hsin}",

year = "2019",

month = apr,

day = "1",

doi = "10.7567/1882-0786/ab09a8",

language = "English",

volume = "12",

journal = "Applied Physics Express",

issn = "1882-0778",

publisher = "Japan Society of Applied Physics",

number = "4",

}

Promoting control of antiferromagnet-induced perpendicular magnetic anisotropy in magnetic multilayers : Effects of applying in-plane magnetic supporting layers. / Wang, Bo Yao; Huang, Chun Wei; Tsai, Ming Shian; Lin, Kai; Chung, Chun Chieh; Jih, Nae Yeou; Lu, Chun I.; Chuang, Tzu Hung; Wei, Der Hsin.

In: Applied Physics Express, Vol. 12, No. 4, 043004, 01.04.2019.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

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T2 - Effects of applying in-plane magnetic supporting layers

AU - Wang, Bo Yao

AU - Huang, Chun Wei

AU - Tsai, Ming Shian

AU - Lin, Kai

AU - Chung, Chun Chieh

AU - Jih, Nae Yeou

AU - Lu, Chun I.

AU - Chuang, Tzu Hung

AU - Wei, Der Hsin

PY - 2019/4/1

Y1 - 2019/4/1

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AB - We report that antiferromagnet-induced perpendicular magnetic anisotropy (PMA) occurring in magnetic thin films can be effectively controlled by applying ultrathin in-plane magnetic supporting layers with high ferromagnetic ordering temperature through magnetic proximity effects. In a series of epitaxially grown 12-ML Ni/Co/Mn/Co/Cu(001) films, we observed that the PMA of the top 12-ML Ni/Co films and the long-range antiferromagnetic ordering of Mn film were enhanced concurrently with the establishment of ferromagnetic ordering of the bottom Co film. This clearly proves the underlying mechanism of magnetic proximity effects, and offers another degree of freedom for the control of perpendicular-based magnetic logical devices.

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