Preparation and characterization of Cu(In,Ga)Se2 thin film solar cell by printing technique with powders of quaternary alloy and NaF

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Abstract

This study prepared Cu(In,Ga)Se2 (CIGS) thin films on bi-layer Mo coated soda-lime glass, by printing with mixed powders of CIGS quaternary alloy (average partial size of 680 nm) and NaF. A single-stage annealing process was performed to form a CIGS chalcopyrite phase. Experimental results show stoichiometric ratios of Cu/(In+Ga) = 0.94 and Ga/(In+Ga) = 0.26 in the CIGS film. The resistivity of the sample was 12.69 Ω cm, with a carrier concentration of 9.34 × 1016 cm-3, and mobility of 5.27 cm2 V-1 s-1. The CIGS film exhibited p-type conductivity. The incorporation of 1 wt% NaF in the CIGS powder produced a chalcopyrite structure with the best crystalinity. Raman analysis identified a number of phases, including CuInSe2 and CuIn3Se 5. The CIGS solar cells with AZO/i-ZnO/CdS/CIGS/Mo/soda-lime glass structure were fabricated. The CIGS thin film solar cells conversion efficiency of 1.23 % on 1 × 1.5 cm2.

Original languageEnglish
Pages (from-to)2906-2912
Number of pages7
JournalJournal of Materials Science: Materials in Electronics
Volume24
Issue number8
DOIs
Publication statusPublished - 2013 Aug 1

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quaternary alloys
calcium oxides
Lime
printing
Powders
Printing
solar cells
Glass
preparation
glass
thin films
Conversion efficiency
Carrier concentration
Solar cells
Annealing
Thin films
conductivity
electrical resistivity
annealing
Thin film solar cells

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

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title = "Preparation and characterization of Cu(In,Ga)Se2 thin film solar cell by printing technique with powders of quaternary alloy and NaF",
abstract = "This study prepared Cu(In,Ga)Se2 (CIGS) thin films on bi-layer Mo coated soda-lime glass, by printing with mixed powders of CIGS quaternary alloy (average partial size of 680 nm) and NaF. A single-stage annealing process was performed to form a CIGS chalcopyrite phase. Experimental results show stoichiometric ratios of Cu/(In+Ga) = 0.94 and Ga/(In+Ga) = 0.26 in the CIGS film. The resistivity of the sample was 12.69 Ω cm, with a carrier concentration of 9.34 × 1016 cm-3, and mobility of 5.27 cm2 V-1 s-1. The CIGS film exhibited p-type conductivity. The incorporation of 1 wt{\%} NaF in the CIGS powder produced a chalcopyrite structure with the best crystalinity. Raman analysis identified a number of phases, including CuInSe2 and CuIn3Se 5. The CIGS solar cells with AZO/i-ZnO/CdS/CIGS/Mo/soda-lime glass structure were fabricated. The CIGS thin film solar cells conversion efficiency of 1.23 {\%} on 1 × 1.5 cm2.",
author = "Chih-Hsiung Shen and Lin, {Yi-Cheng or Y. C.}",
year = "2013",
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language = "English",
volume = "24",
pages = "2906--2912",
journal = "Journal of Materials Science: Materials in Electronics",
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T1 - Preparation and characterization of Cu(In,Ga)Se2 thin film solar cell by printing technique with powders of quaternary alloy and NaF

AU - Shen, Chih-Hsiung

AU - Lin, Yi-Cheng or Y. C.

PY - 2013/8/1

Y1 - 2013/8/1

N2 - This study prepared Cu(In,Ga)Se2 (CIGS) thin films on bi-layer Mo coated soda-lime glass, by printing with mixed powders of CIGS quaternary alloy (average partial size of 680 nm) and NaF. A single-stage annealing process was performed to form a CIGS chalcopyrite phase. Experimental results show stoichiometric ratios of Cu/(In+Ga) = 0.94 and Ga/(In+Ga) = 0.26 in the CIGS film. The resistivity of the sample was 12.69 Ω cm, with a carrier concentration of 9.34 × 1016 cm-3, and mobility of 5.27 cm2 V-1 s-1. The CIGS film exhibited p-type conductivity. The incorporation of 1 wt% NaF in the CIGS powder produced a chalcopyrite structure with the best crystalinity. Raman analysis identified a number of phases, including CuInSe2 and CuIn3Se 5. The CIGS solar cells with AZO/i-ZnO/CdS/CIGS/Mo/soda-lime glass structure were fabricated. The CIGS thin film solar cells conversion efficiency of 1.23 % on 1 × 1.5 cm2.

AB - This study prepared Cu(In,Ga)Se2 (CIGS) thin films on bi-layer Mo coated soda-lime glass, by printing with mixed powders of CIGS quaternary alloy (average partial size of 680 nm) and NaF. A single-stage annealing process was performed to form a CIGS chalcopyrite phase. Experimental results show stoichiometric ratios of Cu/(In+Ga) = 0.94 and Ga/(In+Ga) = 0.26 in the CIGS film. The resistivity of the sample was 12.69 Ω cm, with a carrier concentration of 9.34 × 1016 cm-3, and mobility of 5.27 cm2 V-1 s-1. The CIGS film exhibited p-type conductivity. The incorporation of 1 wt% NaF in the CIGS powder produced a chalcopyrite structure with the best crystalinity. Raman analysis identified a number of phases, including CuInSe2 and CuIn3Se 5. The CIGS solar cells with AZO/i-ZnO/CdS/CIGS/Mo/soda-lime glass structure were fabricated. The CIGS thin film solar cells conversion efficiency of 1.23 % on 1 × 1.5 cm2.

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