Preparation and characterization of Cu(In,Ga)Se2 thin film solar cell by printing technique with powders of quaternary alloy and NaF

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This study prepared Cu(In,Ga)Se2 (CIGS) thin films on bi-layer Mo coated soda-lime glass, by printing with mixed powders of CIGS quaternary alloy (average partial size of 680 nm) and NaF. A single-stage annealing process was performed to form a CIGS chalcopyrite phase. Experimental results show stoichiometric ratios of Cu/(In+Ga) = 0.94 and Ga/(In+Ga) = 0.26 in the CIGS film. The resistivity of the sample was 12.69 Ω cm, with a carrier concentration of 9.34 × 1016 cm-3, and mobility of 5.27 cm2 V-1 s-1. The CIGS film exhibited p-type conductivity. The incorporation of 1 wt% NaF in the CIGS powder produced a chalcopyrite structure with the best crystalinity. Raman analysis identified a number of phases, including CuInSe2 and CuIn3Se 5. The CIGS solar cells with AZO/i-ZnO/CdS/CIGS/Mo/soda-lime glass structure were fabricated. The CIGS thin film solar cells conversion efficiency of 1.23 % on 1 × 1.5 cm2.

Original languageEnglish
Pages (from-to)2906-2912
Number of pages7
JournalJournal of Materials Science: Materials in Electronics
Issue number8
Publication statusPublished - 2013 Aug 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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