Abstract
In this study, Cu(In,Ga)(Se,S) 2 (CIGSS) thin films were deposited onto a bi-layer Mo coated soda-lime glass by co-sputtering a chalcopyrite Cu(In,Ga)Se 2 (CIGS) quaternary alloy target and an In 2 S 3 binary target. A one-stage annealing process was performed to form CIGSS chalcopyrite phase without post-selenization. Experimental results show that CIGSS films were prepared by the proposed co-sputter process via CIGS (70 W by radio frequency) and In 2 S 3 (30 W by direct current) with a substrate temperature of 373 K, working pressure of 0.67 Pa, and one-stage annealing at 798 K for 30 min. The stoichiometry ratios of the CIGSS film were Cu/(In + Ga) = 0.92, Ga/(In + Ga) = 0.26, and Se/(S) = 0.49 that approached device-quality stoichiometry ratio (Cu/(In + Ga) < 0.95, Ga/(In + Ga) < 0.3, and (Se/S) ≈ 0.5). The resistivity of the sample was 14.8 Ω cm, with a carrier concentration of 3.4 × 10 17 cm -3 and mobility of 1.2 cm 2 V -1 s -1 . The resulting film exhibited p-type conductivity with a double graded band-gap structure.
| Original language | English |
|---|---|
| Pages (from-to) | 4278-4284 |
| Number of pages | 7 |
| Journal | Applied Surface Science |
| Volume | 257 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 2011 Feb 15 |
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All Science Journal Classification (ASJC) codes
- Surfaces, Coatings and Films
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Preparation and characterization of Cu(In,Ga)(Se,S) 2 films without selenization by co-sputtering from Cu(In,Ga)Se 2 quaternary and In 2 S 3 targets . / Lin, Yi-Cheng or Y. C.; Ke, J. H.; Yen, W. T.; Liang, S. C.; Wu, C. H.; Chiang, C. T.
In: Applied Surface Science, Vol. 257, No. 9, 15.02.2011, p. 4278-4284.Research output: Contribution to journal › Article
TY - JOUR
T1 - Preparation and characterization of Cu(In,Ga)(Se,S) 2 films without selenization by co-sputtering from Cu(In,Ga)Se 2 quaternary and In 2 S 3 targets
AU - Lin, Yi-Cheng or Y. C.
AU - Ke, J. H.
AU - Yen, W. T.
AU - Liang, S. C.
AU - Wu, C. H.
AU - Chiang, C. T.
PY - 2011/2/15
Y1 - 2011/2/15
N2 - In this study, Cu(In,Ga)(Se,S) 2 (CIGSS) thin films were deposited onto a bi-layer Mo coated soda-lime glass by co-sputtering a chalcopyrite Cu(In,Ga)Se 2 (CIGS) quaternary alloy target and an In 2 S 3 binary target. A one-stage annealing process was performed to form CIGSS chalcopyrite phase without post-selenization. Experimental results show that CIGSS films were prepared by the proposed co-sputter process via CIGS (70 W by radio frequency) and In 2 S 3 (30 W by direct current) with a substrate temperature of 373 K, working pressure of 0.67 Pa, and one-stage annealing at 798 K for 30 min. The stoichiometry ratios of the CIGSS film were Cu/(In + Ga) = 0.92, Ga/(In + Ga) = 0.26, and Se/(S) = 0.49 that approached device-quality stoichiometry ratio (Cu/(In + Ga) < 0.95, Ga/(In + Ga) < 0.3, and (Se/S) ≈ 0.5). The resistivity of the sample was 14.8 Ω cm, with a carrier concentration of 3.4 × 10 17 cm -3 and mobility of 1.2 cm 2 V -1 s -1 . The resulting film exhibited p-type conductivity with a double graded band-gap structure.
AB - In this study, Cu(In,Ga)(Se,S) 2 (CIGSS) thin films were deposited onto a bi-layer Mo coated soda-lime glass by co-sputtering a chalcopyrite Cu(In,Ga)Se 2 (CIGS) quaternary alloy target and an In 2 S 3 binary target. A one-stage annealing process was performed to form CIGSS chalcopyrite phase without post-selenization. Experimental results show that CIGSS films were prepared by the proposed co-sputter process via CIGS (70 W by radio frequency) and In 2 S 3 (30 W by direct current) with a substrate temperature of 373 K, working pressure of 0.67 Pa, and one-stage annealing at 798 K for 30 min. The stoichiometry ratios of the CIGSS film were Cu/(In + Ga) = 0.92, Ga/(In + Ga) = 0.26, and Se/(S) = 0.49 that approached device-quality stoichiometry ratio (Cu/(In + Ga) < 0.95, Ga/(In + Ga) < 0.3, and (Se/S) ≈ 0.5). The resistivity of the sample was 14.8 Ω cm, with a carrier concentration of 3.4 × 10 17 cm -3 and mobility of 1.2 cm 2 V -1 s -1 . The resulting film exhibited p-type conductivity with a double graded band-gap structure.
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U2 - 10.1016/j.apsusc.2010.12.036
DO - 10.1016/j.apsusc.2010.12.036
M3 - Article
AN - SCOPUS:78951480806
VL - 257
SP - 4278
EP - 4284
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
IS - 9
ER -