Preparation and characterization of Cu(In,Ga)(Se,S) 2 films without selenization by co-sputtering from Cu(In,Ga)Se 2 quaternary and In 2 S 3 targets

Yi-Cheng or Y. C. Lin, J. H. Ke, W. T. Yen, S. C. Liang, C. H. Wu, C. T. Chiang

Research output: Contribution to journalArticle

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Abstract

In this study, Cu(In,Ga)(Se,S) 2 (CIGSS) thin films were deposited onto a bi-layer Mo coated soda-lime glass by co-sputtering a chalcopyrite Cu(In,Ga)Se 2 (CIGS) quaternary alloy target and an In 2 S 3 binary target. A one-stage annealing process was performed to form CIGSS chalcopyrite phase without post-selenization. Experimental results show that CIGSS films were prepared by the proposed co-sputter process via CIGS (70 W by radio frequency) and In 2 S 3 (30 W by direct current) with a substrate temperature of 373 K, working pressure of 0.67 Pa, and one-stage annealing at 798 K for 30 min. The stoichiometry ratios of the CIGSS film were Cu/(In + Ga) = 0.92, Ga/(In + Ga) = 0.26, and Se/(S) = 0.49 that approached device-quality stoichiometry ratio (Cu/(In + Ga) < 0.95, Ga/(In + Ga) < 0.3, and (Se/S) ≈ 0.5). The resistivity of the sample was 14.8 Ω cm, with a carrier concentration of 3.4 × 10 17 cm -3 and mobility of 1.2 cm 2 V -1 s -1 . The resulting film exhibited p-type conductivity with a double graded band-gap structure.

Original languageEnglish
Pages (from-to)4278-4284
Number of pages7
JournalApplied Surface Science
Volume257
Issue number9
DOIs
Publication statusPublished - 2011 Feb 15

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Sputtering
Stoichiometry
Annealing
Lime
Carrier concentration
Energy gap
Glass
Thin films
Substrates
Temperature
chalcopyrite
soda lime

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films

Cite this

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title = "Preparation and characterization of Cu(In,Ga)(Se,S) 2 films without selenization by co-sputtering from Cu(In,Ga)Se 2 quaternary and In 2 S 3 targets",
abstract = "In this study, Cu(In,Ga)(Se,S) 2 (CIGSS) thin films were deposited onto a bi-layer Mo coated soda-lime glass by co-sputtering a chalcopyrite Cu(In,Ga)Se 2 (CIGS) quaternary alloy target and an In 2 S 3 binary target. A one-stage annealing process was performed to form CIGSS chalcopyrite phase without post-selenization. Experimental results show that CIGSS films were prepared by the proposed co-sputter process via CIGS (70 W by radio frequency) and In 2 S 3 (30 W by direct current) with a substrate temperature of 373 K, working pressure of 0.67 Pa, and one-stage annealing at 798 K for 30 min. The stoichiometry ratios of the CIGSS film were Cu/(In + Ga) = 0.92, Ga/(In + Ga) = 0.26, and Se/(S) = 0.49 that approached device-quality stoichiometry ratio (Cu/(In + Ga) < 0.95, Ga/(In + Ga) < 0.3, and (Se/S) ≈ 0.5). The resistivity of the sample was 14.8 Ω cm, with a carrier concentration of 3.4 × 10 17 cm -3 and mobility of 1.2 cm 2 V -1 s -1 . The resulting film exhibited p-type conductivity with a double graded band-gap structure.",
author = "Lin, {Yi-Cheng or Y. C.} and Ke, {J. H.} and Yen, {W. T.} and Liang, {S. C.} and Wu, {C. H.} and Chiang, {C. T.}",
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Preparation and characterization of Cu(In,Ga)(Se,S) 2 films without selenization by co-sputtering from Cu(In,Ga)Se 2 quaternary and In 2 S 3 targets . / Lin, Yi-Cheng or Y. C.; Ke, J. H.; Yen, W. T.; Liang, S. C.; Wu, C. H.; Chiang, C. T.

In: Applied Surface Science, Vol. 257, No. 9, 15.02.2011, p. 4278-4284.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Preparation and characterization of Cu(In,Ga)(Se,S) 2 films without selenization by co-sputtering from Cu(In,Ga)Se 2 quaternary and In 2 S 3 targets

AU - Lin, Yi-Cheng or Y. C.

AU - Ke, J. H.

AU - Yen, W. T.

AU - Liang, S. C.

AU - Wu, C. H.

AU - Chiang, C. T.

PY - 2011/2/15

Y1 - 2011/2/15

N2 - In this study, Cu(In,Ga)(Se,S) 2 (CIGSS) thin films were deposited onto a bi-layer Mo coated soda-lime glass by co-sputtering a chalcopyrite Cu(In,Ga)Se 2 (CIGS) quaternary alloy target and an In 2 S 3 binary target. A one-stage annealing process was performed to form CIGSS chalcopyrite phase without post-selenization. Experimental results show that CIGSS films were prepared by the proposed co-sputter process via CIGS (70 W by radio frequency) and In 2 S 3 (30 W by direct current) with a substrate temperature of 373 K, working pressure of 0.67 Pa, and one-stage annealing at 798 K for 30 min. The stoichiometry ratios of the CIGSS film were Cu/(In + Ga) = 0.92, Ga/(In + Ga) = 0.26, and Se/(S) = 0.49 that approached device-quality stoichiometry ratio (Cu/(In + Ga) < 0.95, Ga/(In + Ga) < 0.3, and (Se/S) ≈ 0.5). The resistivity of the sample was 14.8 Ω cm, with a carrier concentration of 3.4 × 10 17 cm -3 and mobility of 1.2 cm 2 V -1 s -1 . The resulting film exhibited p-type conductivity with a double graded band-gap structure.

AB - In this study, Cu(In,Ga)(Se,S) 2 (CIGSS) thin films were deposited onto a bi-layer Mo coated soda-lime glass by co-sputtering a chalcopyrite Cu(In,Ga)Se 2 (CIGS) quaternary alloy target and an In 2 S 3 binary target. A one-stage annealing process was performed to form CIGSS chalcopyrite phase without post-selenization. Experimental results show that CIGSS films were prepared by the proposed co-sputter process via CIGS (70 W by radio frequency) and In 2 S 3 (30 W by direct current) with a substrate temperature of 373 K, working pressure of 0.67 Pa, and one-stage annealing at 798 K for 30 min. The stoichiometry ratios of the CIGSS film were Cu/(In + Ga) = 0.92, Ga/(In + Ga) = 0.26, and Se/(S) = 0.49 that approached device-quality stoichiometry ratio (Cu/(In + Ga) < 0.95, Ga/(In + Ga) < 0.3, and (Se/S) ≈ 0.5). The resistivity of the sample was 14.8 Ω cm, with a carrier concentration of 3.4 × 10 17 cm -3 and mobility of 1.2 cm 2 V -1 s -1 . The resulting film exhibited p-type conductivity with a double graded band-gap structure.

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DO - 10.1016/j.apsusc.2010.12.036

M3 - Article

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SP - 4278

EP - 4284

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

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