Preparation and characterization of Cu(In,Ga)(Se,S)                         2                          films without selenization by co-sputtering from Cu(In,Ga)Se                         2                          quaternary and In                         2                         S                         3                          targets

Y. C. Lin; J. H. Ke; W. T. Yen; S. C. Liang; C. H. Wu; C. T. Chiang

doi:10.1016/j.apsusc.2010.12.036

Preparation and characterization of Cu(In,Ga)(Se,S) ₂ films without selenization by co-sputtering from Cu(In,Ga)Se ₂ quaternary and In ₂ S ₃ targets

Y. C. Lin, J. H. Ke, W. T. Yen, S. C. Liang, C. H. Wu, C. T. Chiang

Department of Mechatronic Engineering

Research output: Contribution to journal › Article › peer-review

54 Citations (Scopus)

Abstract

In this study, Cu(In,Ga)(Se,S) ₂ (CIGSS) thin films were deposited onto a bi-layer Mo coated soda-lime glass by co-sputtering a chalcopyrite Cu(In,Ga)Se ₂ (CIGS) quaternary alloy target and an In ₂ S ₃ binary target. A one-stage annealing process was performed to form CIGSS chalcopyrite phase without post-selenization. Experimental results show that CIGSS films were prepared by the proposed co-sputter process via CIGS (70 W by radio frequency) and In ₂ S ₃ (30 W by direct current) with a substrate temperature of 373 K, working pressure of 0.67 Pa, and one-stage annealing at 798 K for 30 min. The stoichiometry ratios of the CIGSS film were Cu/(In + Ga) = 0.92, Ga/(In + Ga) = 0.26, and Se/(S) = 0.49 that approached device-quality stoichiometry ratio (Cu/(In + Ga) < 0.95, Ga/(In + Ga) < 0.3, and (Se/S) ≈ 0.5). The resistivity of the sample was 14.8 Ω cm, with a carrier concentration of 3.4 × 10 ¹⁷ cm ^-3 and mobility of 1.2 cm ² V ^-1 s ^-1 . The resulting film exhibited p-type conductivity with a double graded band-gap structure.

Original language	English
Pages (from-to)	4278-4284
Number of pages	7
Journal	Applied Surface Science
Volume	257
Issue number	9
DOIs	https://doi.org/10.1016/j.apsusc.2010.12.036
Publication status	Published - 2011 Feb 15

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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Lin, Y. C., Ke, J. H., Yen, W. T., Liang, S. C., Wu, C. H., & Chiang, C. T. (2011). Preparation and characterization of Cu(In,Ga)(Se,S) ₂ films without selenization by co-sputtering from Cu(In,Ga)Se ₂ quaternary and In ₂ S ₃ targets Applied Surface Science, 257(9), 4278-4284. https://doi.org/10.1016/j.apsusc.2010.12.036

Lin, Y. C. ; Ke, J. H. ; Yen, W. T. ; Liang, S. C. ; Wu, C. H. ; Chiang, C. T. / Preparation and characterization of Cu(In,Ga)(Se,S) ₂ films without selenization by co-sputtering from Cu(In,Ga)Se ₂ quaternary and In ₂ S ₃ targets In: Applied Surface Science. 2011 ; Vol. 257, No. 9. pp. 4278-4284.

@article{bb099215c1744cbe97e01b6c5fafa9bd,

title = " Preparation and characterization of Cu(In,Ga)(Se,S) 2 films without selenization by co-sputtering from Cu(In,Ga)Se 2 quaternary and In 2 S 3 targets ",

abstract = " In this study, Cu(In,Ga)(Se,S) 2 (CIGSS) thin films were deposited onto a bi-layer Mo coated soda-lime glass by co-sputtering a chalcopyrite Cu(In,Ga)Se 2 (CIGS) quaternary alloy target and an In 2 S 3 binary target. A one-stage annealing process was performed to form CIGSS chalcopyrite phase without post-selenization. Experimental results show that CIGSS films were prepared by the proposed co-sputter process via CIGS (70 W by radio frequency) and In 2 S 3 (30 W by direct current) with a substrate temperature of 373 K, working pressure of 0.67 Pa, and one-stage annealing at 798 K for 30 min. The stoichiometry ratios of the CIGSS film were Cu/(In + Ga) = 0.92, Ga/(In + Ga) = 0.26, and Se/(S) = 0.49 that approached device-quality stoichiometry ratio (Cu/(In + Ga) < 0.95, Ga/(In + Ga) < 0.3, and (Se/S) ≈ 0.5). The resistivity of the sample was 14.8 Ω cm, with a carrier concentration of 3.4 × 10 17 cm -3 and mobility of 1.2 cm 2 V -1 s -1 . The resulting film exhibited p-type conductivity with a double graded band-gap structure.",

author = "Lin, {Y. C.} and Ke, {J. H.} and Yen, {W. T.} and Liang, {S. C.} and Wu, {C. H.} and Chiang, {C. T.}",

year = "2011",

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day = "15",

doi = "10.1016/j.apsusc.2010.12.036",

language = "English",

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Lin, YC, Ke, JH, Yen, WT, Liang, SC, Wu, CH & Chiang, CT 2011, ' Preparation and characterization of Cu(In,Ga)(Se,S) ₂ films without selenization by co-sputtering from Cu(In,Ga)Se ₂ quaternary and In ₂ S ₃ targets ', Applied Surface Science, vol. 257, no. 9, pp. 4278-4284. https://doi.org/10.1016/j.apsusc.2010.12.036

Preparation and characterization of Cu(In,Ga)(Se,S) ₂ films without selenization by co-sputtering from Cu(In,Ga)Se ₂ quaternary and In ₂ S ₃ targets . / Lin, Y. C.; Ke, J. H.; Yen, W. T.; Liang, S. C.; Wu, C. H.; Chiang, C. T.

In: Applied Surface Science, Vol. 257, No. 9, 15.02.2011, p. 4278-4284.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Preparation and characterization of Cu(In,Ga)(Se,S) 2 films without selenization by co-sputtering from Cu(In,Ga)Se 2 quaternary and In 2 S 3 targets

AU - Lin, Y. C.

AU - Ke, J. H.

AU - Yen, W. T.

AU - Liang, S. C.

AU - Wu, C. H.

AU - Chiang, C. T.

PY - 2011/2/15

Y1 - 2011/2/15

N2 - In this study, Cu(In,Ga)(Se,S) 2 (CIGSS) thin films were deposited onto a bi-layer Mo coated soda-lime glass by co-sputtering a chalcopyrite Cu(In,Ga)Se 2 (CIGS) quaternary alloy target and an In 2 S 3 binary target. A one-stage annealing process was performed to form CIGSS chalcopyrite phase without post-selenization. Experimental results show that CIGSS films were prepared by the proposed co-sputter process via CIGS (70 W by radio frequency) and In 2 S 3 (30 W by direct current) with a substrate temperature of 373 K, working pressure of 0.67 Pa, and one-stage annealing at 798 K for 30 min. The stoichiometry ratios of the CIGSS film were Cu/(In + Ga) = 0.92, Ga/(In + Ga) = 0.26, and Se/(S) = 0.49 that approached device-quality stoichiometry ratio (Cu/(In + Ga) < 0.95, Ga/(In + Ga) < 0.3, and (Se/S) ≈ 0.5). The resistivity of the sample was 14.8 Ω cm, with a carrier concentration of 3.4 × 10 17 cm -3 and mobility of 1.2 cm 2 V -1 s -1 . The resulting film exhibited p-type conductivity with a double graded band-gap structure.

AB - In this study, Cu(In,Ga)(Se,S) 2 (CIGSS) thin films were deposited onto a bi-layer Mo coated soda-lime glass by co-sputtering a chalcopyrite Cu(In,Ga)Se 2 (CIGS) quaternary alloy target and an In 2 S 3 binary target. A one-stage annealing process was performed to form CIGSS chalcopyrite phase without post-selenization. Experimental results show that CIGSS films were prepared by the proposed co-sputter process via CIGS (70 W by radio frequency) and In 2 S 3 (30 W by direct current) with a substrate temperature of 373 K, working pressure of 0.67 Pa, and one-stage annealing at 798 K for 30 min. The stoichiometry ratios of the CIGSS film were Cu/(In + Ga) = 0.92, Ga/(In + Ga) = 0.26, and Se/(S) = 0.49 that approached device-quality stoichiometry ratio (Cu/(In + Ga) < 0.95, Ga/(In + Ga) < 0.3, and (Se/S) ≈ 0.5). The resistivity of the sample was 14.8 Ω cm, with a carrier concentration of 3.4 × 10 17 cm -3 and mobility of 1.2 cm 2 V -1 s -1 . The resulting film exhibited p-type conductivity with a double graded band-gap structure.

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Lin YC, Ke JH, Yen WT, Liang SC, Wu CH, Chiang CT. Preparation and characterization of Cu(In,Ga)(Se,S) ₂ films without selenization by co-sputtering from Cu(In,Ga)Se ₂ quaternary and In ₂ S ₃ targets Applied Surface Science. 2011 Feb 15;257(9):4278-4284. https://doi.org/10.1016/j.apsusc.2010.12.036