In this study, we inserted an In0.45Ga0.55As pseudomorphic channel inside the wide bandgap In0.3Al0.7As layer on GaAs substrates to improve carrier confinement and device microwave power performance, as compared with the In0.3Ga0.7As lattice matched ones. The rf output power and power-added efficiency increases from 498 mW/mm to 610 mW/mm, and 37% to 43% under a 2.4 GHz operation for a 1-μm gatelength device.
|Number of pages||4|
|Journal||Institute of Physics Conference Series|
|Publication status||Published - 2005 Dec 1|
|Event||31st International Symposium of Compound Semiconductors 2004 - Seoul, Korea, Republic of|
Duration: 2004 Sep 12 → 2004 Dec 16
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)