Power performance enhancement of metamorphic In0.3Al 0.7As/In0.45Ga0.55As HEMTs using pseudomorphic channel design

Cheng Kuo Lin, Jing Chang Wu, Yi Jen Chan, Jenq Shinn Wu, Yung Chung Pan, Chung Chih Tsai, Jiun Tsuen Lai

Research output: Contribution to journalConference article

Abstract

In this study, we inserted an In0.45Ga0.55As pseudomorphic channel inside the wide bandgap In0.3Al0.7As layer on GaAs substrates to improve carrier confinement and device microwave power performance, as compared with the In0.3Ga0.7As lattice matched ones. The rf output power and power-added efficiency increases from 498 mW/mm to 610 mW/mm, and 37% to 43% under a 2.4 GHz operation for a 1-μm gatelength device.

Original languageEnglish
Pages (from-to)287-290
Number of pages4
JournalInstitute of Physics Conference Series
Volume184
Publication statusPublished - 2005 Dec 1
Event31st International Symposium of Compound Semiconductors 2004 - Seoul, Korea, Republic of
Duration: 2004 Sep 122004 Dec 16

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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