Power amplifier for 77-GHz automotive radar in 90-nm LP CMOS technology

Jau-Jr/jau Jr/jau Lin, Kun Hin To, Donna Hammock, Bill Knappenberger, Michael Majerus, W. Margaret Huang

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

This letter reports power amplifiers for 77-GHz automotive radar applications in a 90-nm LP (low power) 1P6M CMOS technology. The three-stage single-ended PA has a 12.4 dB gain and a + 9.1-dBm saturated output power and the two-stage differential PA has a 11.3 dB gain and a +11.4-dBm output power at Pin = 1.9 dBm. This is the first letter to report CMOS PA characteristics over full automotive temperature range (-40°C to 125°C at 77 GHz range.

Original languageEnglish
Article number5443684
Pages (from-to)292-294
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume20
Issue number5
DOIs
Publication statusPublished - 2010 May 1

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power amplifiers
Power amplifiers
radar
CMOS
Radar
output
Temperature
temperature

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Lin, Jau-Jr/jau Jr/jau ; To, Kun Hin ; Hammock, Donna ; Knappenberger, Bill ; Majerus, Michael ; Huang, W. Margaret. / Power amplifier for 77-GHz automotive radar in 90-nm LP CMOS technology. In: IEEE Microwave and Wireless Components Letters. 2010 ; Vol. 20, No. 5. pp. 292-294.
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Lin, J-JJ, To, KH, Hammock, D, Knappenberger, B, Majerus, M & Huang, WM 2010, 'Power amplifier for 77-GHz automotive radar in 90-nm LP CMOS technology', IEEE Microwave and Wireless Components Letters, vol. 20, no. 5, 5443684, pp. 292-294. https://doi.org/10.1109/LMWC.2010.2045598

Power amplifier for 77-GHz automotive radar in 90-nm LP CMOS technology. / Lin, Jau-Jr/jau Jr/jau; To, Kun Hin; Hammock, Donna; Knappenberger, Bill; Majerus, Michael; Huang, W. Margaret.

In: IEEE Microwave and Wireless Components Letters, Vol. 20, No. 5, 5443684, 01.05.2010, p. 292-294.

Research output: Contribution to journalArticle

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