Power amplifier for 77-GHz automotive radar in 90-nm LP CMOS technology

Jau Jr Lin, Kun Hin To, Donna Hammock, Bill Knappenberger, Michael Majerus, W. Margaret Huang

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19 Citations (Scopus)

Abstract

This letter reports power amplifiers for 77-GHz automotive radar applications in a 90-nm LP (low power) 1P6M CMOS technology. The three-stage single-ended PA has a 12.4 dB gain and a + 9.1-dBm saturated output power and the two-stage differential PA has a 11.3 dB gain and a +11.4-dBm output power at Pin = 1.9 dBm. This is the first letter to report CMOS PA characteristics over full automotive temperature range (-40°C to 125°C at 77 GHz range.

Original languageEnglish
Article number5443684
Pages (from-to)292-294
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume20
Issue number5
DOIs
Publication statusPublished - 2010 May 1

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All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Lin, J. J., To, K. H., Hammock, D., Knappenberger, B., Majerus, M., & Huang, W. M. (2010). Power amplifier for 77-GHz automotive radar in 90-nm LP CMOS technology. IEEE Microwave and Wireless Components Letters, 20(5), 292-294. [5443684]. https://doi.org/10.1109/LMWC.2010.2045598