Abstract
This letter reports power amplifiers for 77-GHz automotive radar applications in a 90-nm LP (low power) 1P6M CMOS technology. The three-stage single-ended PA has a 12.4 dB gain and a + 9.1-dBm saturated output power and the two-stage differential PA has a 11.3 dB gain and a +11.4-dBm output power at Pin = 1.9 dBm. This is the first letter to report CMOS PA characteristics over full automotive temperature range (-40°C to 125°C at 77 GHz range.
| Original language | English |
|---|---|
| Article number | 5443684 |
| Pages (from-to) | 292-294 |
| Number of pages | 3 |
| Journal | IEEE Microwave and Wireless Components Letters |
| Volume | 20 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2010 May 1 |
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All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering
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Power amplifier for 77-GHz automotive radar in 90-nm LP CMOS technology. / Lin, Jau-Jr/jau Jr/jau; To, Kun Hin; Hammock, Donna; Knappenberger, Bill; Majerus, Michael; Huang, W. Margaret.
In: IEEE Microwave and Wireless Components Letters, Vol. 20, No. 5, 5443684, 01.05.2010, p. 292-294.Research output: Contribution to journal › Article
TY - JOUR
T1 - Power amplifier for 77-GHz automotive radar in 90-nm LP CMOS technology
AU - Lin, Jau-Jr/jau Jr/jau
AU - To, Kun Hin
AU - Hammock, Donna
AU - Knappenberger, Bill
AU - Majerus, Michael
AU - Huang, W. Margaret
PY - 2010/5/1
Y1 - 2010/5/1
N2 - This letter reports power amplifiers for 77-GHz automotive radar applications in a 90-nm LP (low power) 1P6M CMOS technology. The three-stage single-ended PA has a 12.4 dB gain and a + 9.1-dBm saturated output power and the two-stage differential PA has a 11.3 dB gain and a +11.4-dBm output power at Pin = 1.9 dBm. This is the first letter to report CMOS PA characteristics over full automotive temperature range (-40°C to 125°C at 77 GHz range.
AB - This letter reports power amplifiers for 77-GHz automotive radar applications in a 90-nm LP (low power) 1P6M CMOS technology. The three-stage single-ended PA has a 12.4 dB gain and a + 9.1-dBm saturated output power and the two-stage differential PA has a 11.3 dB gain and a +11.4-dBm output power at Pin = 1.9 dBm. This is the first letter to report CMOS PA characteristics over full automotive temperature range (-40°C to 125°C at 77 GHz range.
UR - http://www.scopus.com/inward/record.url?scp=77952008739&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77952008739&partnerID=8YFLogxK
U2 - 10.1109/LMWC.2010.2045598
DO - 10.1109/LMWC.2010.2045598
M3 - Article
AN - SCOPUS:77952008739
VL - 20
SP - 292
EP - 294
JO - IEEE Microwave and Wireless Components Letters
JF - IEEE Microwave and Wireless Components Letters
SN - 1531-1309
IS - 5
M1 - 5443684
ER -