Post-annealing induced formation of zno nanowires on the zno films in the n20 ambient

Ping Yuan Lin, Wei Tsai Liao, Kuo Yi Yan, Chia Chi Chang, Hsin Yuen Lin, Cheng Liang Wang, Jyh Rong Gong, Dong Yuan Lyu, Jian Hao Lin, Tai Yuan Lin, Hung Ji Lin, Der-Yuh Lin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

ZnO films were grown on (0001) sapphire substrates by atomic layer deposition (ALD) using diethylzinc (DEZn) and nitrous oxide (N 20 ) in an inductively heated reactor operated at atmospheric pressure. Low-temperature (LT) ZnO buffer layers having various thicknesses were deposited at 400 followed by subsequent growth of ZnO films at 600. Some of the ZnO films were then post-annealed at 1000 in the N 2 0 flow. Under certain growth conditions, ZnO nanowires were formed on the post-annealed ZnO samples. Room temperature (RT) photoluminescence (PL) spectra of the ZnO nanowires show strong ultraviolet (UV) near band edge emissions at 3.27 eV with a typical full width at half-maximum (FWHM) of -430 meV and quenched defect luminescence. 10 K PL spectra of the post-annealed ZnO all exhibit sharp excitonic emissions with the dominant emission being located at 3.36 eV having a FWHM of 4.6 meV.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings - Low-Dimensional Materials- Synthesis, Assembly, Property Scaling, and Modeling
Pages145-150
Number of pages6
Publication statusPublished - 2007 Dec 1
EventLow-Dimensional Materials- Synthesis, Assembly, Property Scaling, and Modeling - 2007 MRS Spring Meeting - San Francisco, CA, United States
Duration: 2007 Apr 92007 Apr 13

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1017
ISSN (Print)0272-9172

Other

OtherLow-Dimensional Materials- Synthesis, Assembly, Property Scaling, and Modeling - 2007 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period07-04-0907-04-13

Fingerprint

Nanowires
nanowires
Annealing
Full width at half maximum
annealing
Photoluminescence
photoluminescence
Atomic layer deposition
Aluminum Oxide
nitrous oxides
Nitrous Oxide
Buffer layers
atomic layer epitaxy
Sapphire
Atmospheric pressure
Luminescence
atmospheric pressure
sapphire
buffers
reactors

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Lin, P. Y., Liao, W. T., Yan, K. Y., Chang, C. C., Lin, H. Y., Wang, C. L., ... Lin, D-Y. (2007). Post-annealing induced formation of zno nanowires on the zno films in the n20 ambient. In Materials Research Society Symposium Proceedings - Low-Dimensional Materials- Synthesis, Assembly, Property Scaling, and Modeling (pp. 145-150). (Materials Research Society Symposium Proceedings; Vol. 1017).
Lin, Ping Yuan ; Liao, Wei Tsai ; Yan, Kuo Yi ; Chang, Chia Chi ; Lin, Hsin Yuen ; Wang, Cheng Liang ; Gong, Jyh Rong ; Lyu, Dong Yuan ; Lin, Jian Hao ; Lin, Tai Yuan ; Lin, Hung Ji ; Lin, Der-Yuh. / Post-annealing induced formation of zno nanowires on the zno films in the n20 ambient. Materials Research Society Symposium Proceedings - Low-Dimensional Materials- Synthesis, Assembly, Property Scaling, and Modeling. 2007. pp. 145-150 (Materials Research Society Symposium Proceedings).
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title = "Post-annealing induced formation of zno nanowires on the zno films in the n20 ambient",
abstract = "ZnO films were grown on (0001) sapphire substrates by atomic layer deposition (ALD) using diethylzinc (DEZn) and nitrous oxide (N 20 ) in an inductively heated reactor operated at atmospheric pressure. Low-temperature (LT) ZnO buffer layers having various thicknesses were deposited at 400 followed by subsequent growth of ZnO films at 600. Some of the ZnO films were then post-annealed at 1000 in the N 2 0 flow. Under certain growth conditions, ZnO nanowires were formed on the post-annealed ZnO samples. Room temperature (RT) photoluminescence (PL) spectra of the ZnO nanowires show strong ultraviolet (UV) near band edge emissions at 3.27 eV with a typical full width at half-maximum (FWHM) of -430 meV and quenched defect luminescence. 10 K PL spectra of the post-annealed ZnO all exhibit sharp excitonic emissions with the dominant emission being located at 3.36 eV having a FWHM of 4.6 meV.",
author = "Lin, {Ping Yuan} and Liao, {Wei Tsai} and Yan, {Kuo Yi} and Chang, {Chia Chi} and Lin, {Hsin Yuen} and Wang, {Cheng Liang} and Gong, {Jyh Rong} and Lyu, {Dong Yuan} and Lin, {Jian Hao} and Lin, {Tai Yuan} and Lin, {Hung Ji} and Der-Yuh Lin",
year = "2007",
month = "12",
day = "1",
language = "English",
isbn = "9781605604237",
series = "Materials Research Society Symposium Proceedings",
pages = "145--150",
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Lin, PY, Liao, WT, Yan, KY, Chang, CC, Lin, HY, Wang, CL, Gong, JR, Lyu, DY, Lin, JH, Lin, TY, Lin, HJ & Lin, D-Y 2007, Post-annealing induced formation of zno nanowires on the zno films in the n20 ambient. in Materials Research Society Symposium Proceedings - Low-Dimensional Materials- Synthesis, Assembly, Property Scaling, and Modeling. Materials Research Society Symposium Proceedings, vol. 1017, pp. 145-150, Low-Dimensional Materials- Synthesis, Assembly, Property Scaling, and Modeling - 2007 MRS Spring Meeting, San Francisco, CA, United States, 07-04-09.

Post-annealing induced formation of zno nanowires on the zno films in the n20 ambient. / Lin, Ping Yuan; Liao, Wei Tsai; Yan, Kuo Yi; Chang, Chia Chi; Lin, Hsin Yuen; Wang, Cheng Liang; Gong, Jyh Rong; Lyu, Dong Yuan; Lin, Jian Hao; Lin, Tai Yuan; Lin, Hung Ji; Lin, Der-Yuh.

Materials Research Society Symposium Proceedings - Low-Dimensional Materials- Synthesis, Assembly, Property Scaling, and Modeling. 2007. p. 145-150 (Materials Research Society Symposium Proceedings; Vol. 1017).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Post-annealing induced formation of zno nanowires on the zno films in the n20 ambient

AU - Lin, Ping Yuan

AU - Liao, Wei Tsai

AU - Yan, Kuo Yi

AU - Chang, Chia Chi

AU - Lin, Hsin Yuen

AU - Wang, Cheng Liang

AU - Gong, Jyh Rong

AU - Lyu, Dong Yuan

AU - Lin, Jian Hao

AU - Lin, Tai Yuan

AU - Lin, Hung Ji

AU - Lin, Der-Yuh

PY - 2007/12/1

Y1 - 2007/12/1

N2 - ZnO films were grown on (0001) sapphire substrates by atomic layer deposition (ALD) using diethylzinc (DEZn) and nitrous oxide (N 20 ) in an inductively heated reactor operated at atmospheric pressure. Low-temperature (LT) ZnO buffer layers having various thicknesses were deposited at 400 followed by subsequent growth of ZnO films at 600. Some of the ZnO films were then post-annealed at 1000 in the N 2 0 flow. Under certain growth conditions, ZnO nanowires were formed on the post-annealed ZnO samples. Room temperature (RT) photoluminescence (PL) spectra of the ZnO nanowires show strong ultraviolet (UV) near band edge emissions at 3.27 eV with a typical full width at half-maximum (FWHM) of -430 meV and quenched defect luminescence. 10 K PL spectra of the post-annealed ZnO all exhibit sharp excitonic emissions with the dominant emission being located at 3.36 eV having a FWHM of 4.6 meV.

AB - ZnO films were grown on (0001) sapphire substrates by atomic layer deposition (ALD) using diethylzinc (DEZn) and nitrous oxide (N 20 ) in an inductively heated reactor operated at atmospheric pressure. Low-temperature (LT) ZnO buffer layers having various thicknesses were deposited at 400 followed by subsequent growth of ZnO films at 600. Some of the ZnO films were then post-annealed at 1000 in the N 2 0 flow. Under certain growth conditions, ZnO nanowires were formed on the post-annealed ZnO samples. Room temperature (RT) photoluminescence (PL) spectra of the ZnO nanowires show strong ultraviolet (UV) near band edge emissions at 3.27 eV with a typical full width at half-maximum (FWHM) of -430 meV and quenched defect luminescence. 10 K PL spectra of the post-annealed ZnO all exhibit sharp excitonic emissions with the dominant emission being located at 3.36 eV having a FWHM of 4.6 meV.

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M3 - Conference contribution

AN - SCOPUS:70349910285

SN - 9781605604237

T3 - Materials Research Society Symposium Proceedings

SP - 145

EP - 150

BT - Materials Research Society Symposium Proceedings - Low-Dimensional Materials- Synthesis, Assembly, Property Scaling, and Modeling

ER -

Lin PY, Liao WT, Yan KY, Chang CC, Lin HY, Wang CL et al. Post-annealing induced formation of zno nanowires on the zno films in the n20 ambient. In Materials Research Society Symposium Proceedings - Low-Dimensional Materials- Synthesis, Assembly, Property Scaling, and Modeling. 2007. p. 145-150. (Materials Research Society Symposium Proceedings).