Polarized infrared reststrahlen features of wurtzite inGaN thin film

Pauline Yew, Lee Sai Cheong, Ng Sha Shiong, Yoon Tiem Leong, Haslan Abu Hassan, Wei-Li Chen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Polarized infrared (IR) reflectance measurement was carried out to investigate the optical phonon modes of wurtzite structure In0.92Ga0.08N thin film grown by molecular beam epitaxy. Composition dependence of IR reststrahlen features was observed. Theoretical polarized IR reflectance spectrum was simulated using the standard multilayer optics technique with a multioscillator dielectric function model. By obtaining the best fit of experimental and theoretical spectrum, the Brillouin zone center E1 optical phonon modes together with the dielectric constant, layer thickness, free carriers concentration and mobility were extracted non-destructively. The extracted E1 optical phonon modes were compared with those generated from modified random element iso-displacement (MREI) model.

Original languageEnglish
Title of host publicationMain Tendencies in Applied Materials Science
PublisherTrans Tech Publications Ltd
Pages614-619
Number of pages6
ISBN (Print)9783038357520
DOIs
Publication statusPublished - 2016 Jan 1
Event28th Regional Conference on Solid State Science and Technology, RCSSST 2014 - Cameron Highlands, Pahang, Malaysia
Duration: 2014 Nov 252014 Nov 27

Publication series

NameMaterials Science Forum
Volume846
ISSN (Print)0255-5476

Other

Other28th Regional Conference on Solid State Science and Technology, RCSSST 2014
CountryMalaysia
CityCameron Highlands, Pahang
Period14-11-2514-11-27

Fingerprint

wurtzite
Infrared radiation
Thin films
thin films
reflectance
Reflectometers
Carrier mobility
Brillouin zones
Molecular beam epitaxy
Carrier concentration
Optics
Multilayers
Permittivity
molecular beam epitaxy
optics
permittivity
Chemical analysis

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Yew, P., Cheong, L. S., Shiong, N. S., Leong, Y. T., Abu Hassan, H., & Chen, W-L. (2016). Polarized infrared reststrahlen features of wurtzite inGaN thin film. In Main Tendencies in Applied Materials Science (pp. 614-619). (Materials Science Forum; Vol. 846). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.846.614
Yew, Pauline ; Cheong, Lee Sai ; Shiong, Ng Sha ; Leong, Yoon Tiem ; Abu Hassan, Haslan ; Chen, Wei-Li. / Polarized infrared reststrahlen features of wurtzite inGaN thin film. Main Tendencies in Applied Materials Science. Trans Tech Publications Ltd, 2016. pp. 614-619 (Materials Science Forum).
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abstract = "Polarized infrared (IR) reflectance measurement was carried out to investigate the optical phonon modes of wurtzite structure In0.92Ga0.08N thin film grown by molecular beam epitaxy. Composition dependence of IR reststrahlen features was observed. Theoretical polarized IR reflectance spectrum was simulated using the standard multilayer optics technique with a multioscillator dielectric function model. By obtaining the best fit of experimental and theoretical spectrum, the Brillouin zone center E1 optical phonon modes together with the dielectric constant, layer thickness, free carriers concentration and mobility were extracted non-destructively. The extracted E1 optical phonon modes were compared with those generated from modified random element iso-displacement (MREI) model.",
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Yew, P, Cheong, LS, Shiong, NS, Leong, YT, Abu Hassan, H & Chen, W-L 2016, Polarized infrared reststrahlen features of wurtzite inGaN thin film. in Main Tendencies in Applied Materials Science. Materials Science Forum, vol. 846, Trans Tech Publications Ltd, pp. 614-619, 28th Regional Conference on Solid State Science and Technology, RCSSST 2014, Cameron Highlands, Pahang, Malaysia, 14-11-25. https://doi.org/10.4028/www.scientific.net/MSF.846.614

Polarized infrared reststrahlen features of wurtzite inGaN thin film. / Yew, Pauline; Cheong, Lee Sai; Shiong, Ng Sha; Leong, Yoon Tiem; Abu Hassan, Haslan; Chen, Wei-Li.

Main Tendencies in Applied Materials Science. Trans Tech Publications Ltd, 2016. p. 614-619 (Materials Science Forum; Vol. 846).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AB - Polarized infrared (IR) reflectance measurement was carried out to investigate the optical phonon modes of wurtzite structure In0.92Ga0.08N thin film grown by molecular beam epitaxy. Composition dependence of IR reststrahlen features was observed. Theoretical polarized IR reflectance spectrum was simulated using the standard multilayer optics technique with a multioscillator dielectric function model. By obtaining the best fit of experimental and theoretical spectrum, the Brillouin zone center E1 optical phonon modes together with the dielectric constant, layer thickness, free carriers concentration and mobility were extracted non-destructively. The extracted E1 optical phonon modes were compared with those generated from modified random element iso-displacement (MREI) model.

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Yew P, Cheong LS, Shiong NS, Leong YT, Abu Hassan H, Chen W-L. Polarized infrared reststrahlen features of wurtzite inGaN thin film. In Main Tendencies in Applied Materials Science. Trans Tech Publications Ltd. 2016. p. 614-619. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.846.614