Polarized infrared reflectance studies for wurtzite InN epilayers on Si(111) grown by molecular beam expitaxy

P. K. Ooi, S. C. Lee, S. S. Ng, Z. Hassan, H. Abu Hassan, Wei-Li Chen

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Room temperature polarized infrared reflectance technique is employed to study the optical properties of wurtzite InN epilayers on Si(111) grown by molecular beam expitaxy. The reflection spectra are compared to the calculated spectra generated based on the anisotropic dielectric function model. Good agreement between the measured and calculated spectra is obtained. From the fit of the experimental curve, the reststrahlen parameters at the center of Brillouin zone, the carrier concentration and mobility as well as the epilayers thicknesses are determined. The values of the carrier concentration and mobility are in good agreement with the results obtained from the Hall effects measurements.

Original languageEnglish
Pages (from-to)739-742
Number of pages4
JournalThin Solid Films
Volume520
Issue number2
DOIs
Publication statusPublished - 2011 Nov 1

Fingerprint

Molecular beams
Epilayers
Carrier mobility
wurtzite
molecular beams
Carrier concentration
Infrared radiation
reflectance
Hall effect
Optical properties
Brillouin zones
optical properties
room temperature
curves
Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Ooi, P. K. ; Lee, S. C. ; Ng, S. S. ; Hassan, Z. ; Abu Hassan, H. ; Chen, Wei-Li. / Polarized infrared reflectance studies for wurtzite InN epilayers on Si(111) grown by molecular beam expitaxy. In: Thin Solid Films. 2011 ; Vol. 520, No. 2. pp. 739-742.
@article{9ed4f1d1f281428a96232ec308289493,
title = "Polarized infrared reflectance studies for wurtzite InN epilayers on Si(111) grown by molecular beam expitaxy",
abstract = "Room temperature polarized infrared reflectance technique is employed to study the optical properties of wurtzite InN epilayers on Si(111) grown by molecular beam expitaxy. The reflection spectra are compared to the calculated spectra generated based on the anisotropic dielectric function model. Good agreement between the measured and calculated spectra is obtained. From the fit of the experimental curve, the reststrahlen parameters at the center of Brillouin zone, the carrier concentration and mobility as well as the epilayers thicknesses are determined. The values of the carrier concentration and mobility are in good agreement with the results obtained from the Hall effects measurements.",
author = "Ooi, {P. K.} and Lee, {S. C.} and Ng, {S. S.} and Z. Hassan and {Abu Hassan}, H. and Wei-Li Chen",
year = "2011",
month = "11",
day = "1",
doi = "10.1016/j.tsf.2011.01.229",
language = "English",
volume = "520",
pages = "739--742",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "2",

}

Polarized infrared reflectance studies for wurtzite InN epilayers on Si(111) grown by molecular beam expitaxy. / Ooi, P. K.; Lee, S. C.; Ng, S. S.; Hassan, Z.; Abu Hassan, H.; Chen, Wei-Li.

In: Thin Solid Films, Vol. 520, No. 2, 01.11.2011, p. 739-742.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Polarized infrared reflectance studies for wurtzite InN epilayers on Si(111) grown by molecular beam expitaxy

AU - Ooi, P. K.

AU - Lee, S. C.

AU - Ng, S. S.

AU - Hassan, Z.

AU - Abu Hassan, H.

AU - Chen, Wei-Li

PY - 2011/11/1

Y1 - 2011/11/1

N2 - Room temperature polarized infrared reflectance technique is employed to study the optical properties of wurtzite InN epilayers on Si(111) grown by molecular beam expitaxy. The reflection spectra are compared to the calculated spectra generated based on the anisotropic dielectric function model. Good agreement between the measured and calculated spectra is obtained. From the fit of the experimental curve, the reststrahlen parameters at the center of Brillouin zone, the carrier concentration and mobility as well as the epilayers thicknesses are determined. The values of the carrier concentration and mobility are in good agreement with the results obtained from the Hall effects measurements.

AB - Room temperature polarized infrared reflectance technique is employed to study the optical properties of wurtzite InN epilayers on Si(111) grown by molecular beam expitaxy. The reflection spectra are compared to the calculated spectra generated based on the anisotropic dielectric function model. Good agreement between the measured and calculated spectra is obtained. From the fit of the experimental curve, the reststrahlen parameters at the center of Brillouin zone, the carrier concentration and mobility as well as the epilayers thicknesses are determined. The values of the carrier concentration and mobility are in good agreement with the results obtained from the Hall effects measurements.

UR - http://www.scopus.com/inward/record.url?scp=80755136550&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80755136550&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2011.01.229

DO - 10.1016/j.tsf.2011.01.229

M3 - Article

VL - 520

SP - 739

EP - 742

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 2

ER -